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In thin film deposition, Ar/SiH4 mixtures are widely used to make polysilicon (poly-Si) and hydrogenated amorphous silicon (a-SiH) layers. Despite extensive research conducted on this mixture, little research has focused on the variations in plasma properties, radicals, and ions that occur during plasma discharge in inductively coupled plasma (ICP) equipment compared to capacitive coupled plasma equipment. In this paper, we investigate the properties of the plasma generated through mathematical modeling of Ar/SiH4 inductive coupled plasma discharge by using the electron energy distribution function (EEDF) obtained by solving the Boltzmann equation. We closely examine the variation in plasma properties and the correlation of plasma variables by controlling the radio frequency power and gas pressure during the process conditions. The Boltzmann equation was computed by assuming the two-term approximation, resulting in a Druyvesteyn-like EEDF due to the high-pressure conditions. To validate the simulation model, the 2D simulation results were compared with probe measurements performed in a two-turn ICP chamber. The results demonstrated encouraging agreement with the measured data. This research not only enhances our comprehension of the discharge characteristics but also establishes a framework for optimizing the discharge conditions to enhance the process and effectively regulate external variables. [ABSTRACT FROM AUTHOR]

We analyze the discharge characteristics of a low-pressure inductively coupled CF4 plasma using a global model and a two-dimensional (2D) simulation. We first conducted a study comparing the experimental results with the global model, which makes it easier to compare the trend concerning external parameters and less computationally expensive, to validate the chemical reaction data, and then, compared the experimental results with the 2D simulation results. We then analyzed the discharge characteristics by comparing the 2D model results with the global model at various gas pressures and powers. The simulations were performed using COMSOL software, which is based on a fluid model. The electron energy distribution function (EEDF) was solved self-consistently using the Boltzmann equation solver, and then, coupled with the fluid model. The results were more consistent with the experimental results when the EEDF was calculated by solving the Boltzmann equation than for assuming the Maxwellian EEDF. Furthermore, the global model results were similar with the mean values obtained from the 2D model. This indicates that it is efficient to first validate the electron collision cross sections and reaction coefficients using the global model. Our approach is expected to be utilized in the analysis of new gases. [ABSTRACT FROM AUTHOR]

The utilization of HBr/Cl2 mixed gas discharge in semiconductor etching processes has been a subject of analysis both experimentally and through simulations to understand its discharge characteristics. In this study, we have developed a model that extends the previous global model of the HBr/Cl2 plasma. The electron temperature and densities are solved in a self-consistent manner, while previous global model uses the measured electron temperature and electron density. Additionally, we have included further data on electron collision reactions to enhance accuracy. This model was then compared with experimental results obtained from pure HBr, pure Cl2, and HBr/Cl2 plasmas. The calculated results align well with the experimental findings within the margin of error. One notable observation from our study is the occurrence of an unusual phenomenon: as the HBr partial concentration increased, the Br+ ion flux initially increased until the ratio reached 0.5, after which it decreased. This behavior can be attributed to Br+ ions being predominantly produced through collisions between Br atoms and electrons. The dominant mechanisms for Br atom generation involve dissociations by Cl radicals, such as Br2 + Cl → Br + BrCl. Consequently, there exists an optimal flow rate at which the Br+ ion flux is maximized. [ABSTRACT FROM AUTHOR]

Two independent methods, namely, Binary-encounter Bethe (BEB) and complex scattering potential-ionization contribution (CSP-ic) methods, are employed to calculate the total ionization cross section (Qion) for cyclic organic molecules from ionization threshold to 5 keV for which there is a paucity of data in the literature. The Qion calculated with the (BEB/ωB97X) combination is found to give good agreement with the experimental results, the CSP-ic method, and the Qion calculated from Irikura orbital energies. The Qion for most of the targets are calculated for the first time over such a wide energy range. Hence, to check the consistency and reliability of the present data, we have also computed the static polarizability for all the targets and the variation of maximum ionization cross section (Qion,max) with polarizability is studied. A linear relationship is observed between these quantities indicating the consistency and reliability of the present Qion data. The targets studied are important for industrial applications, radiation biology, and astrophysics. [ABSTRACT FROM AUTHOR]

Elucidation of the CF2 generation mechanism in 1,3-C4F6 gas plasma has been one of the important issues for experimental and theoretical researchers because of the importance of the CF2 radical in plasma etching processes. To determine the direct CF2 fragmentation mechanisms of 1,3-C4F6 in the S0, T1, and cationic D0 states, the reaction geometry, electron transfer, and molecular orbital transformation were investigated by applying the DFT(ɷB97X-D/aVTZ) method. The direct CF2 (S0) formation by C–C double bond rupture of 1,3-C4F6 (S0) proceeds while maintaining the trans-bent structure by dative bonding interaction between CF2 and its counterpart. 1,3-C4F6 (T1) preferentially produces the CFCFCF2 (T1) and CF2 (S0) fragments following a linear reaction course. This process can be explained using a stepwise electron-sharing interaction model. 1,3-C4F6+ (D0) generates a CF2 (S0) radical rather than CF2 (T1) and CF2+ (D0). The CF2 fragmentation process in D0 is also described using the electron-sharing interaction model but proceeds along the trans-rocking pathway, featuring electron oscillations between the CFCFCF2 and CF2 moieties in the C–C distance range of 1.8–2.6 Å. These findings provide insight into CF2 generation of CF2-containing perfluoro-olefins as potential alternatives to c-C4F8 and valuable information to establish the high-reliable 1,3-C4F6 plasma chemistry database essential to plasma simulations. [ABSTRACT FROM AUTHOR]