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The purpose of this paper was to provide information on encouraging the use of ICT (Information and Communication Technologies) in engineering education in Brazil developing the traditional method of science education due to the technological advances. After a brief outline and the definition of terms used, each assumption is placed in the context of the current. The paper will examine the driving forces and barriers to implement ICT in high education system This article has selected a comparison between traditional system students and distance students who have tried the virtual editions. Subsequently, it will be delivered arguments which explain why teachers have a strong impact on the integration of ICT into education but that they encountered many barriers to it. Among the barriers faced by teachers and students analysed in this article, the lack of accessibility, ICT resources including software and hardware, effective professional development, sufficient time, and technical support appear prominently. It is seen that no component alone is sufficient to provide the best education but the combination of these components. This research was funded by RFBR, project number 20-010-00571 “The Impact of Digital Transformation on Improving the Quality and Innovation of Services”.

Cu2ZnSnSe4 (CZTSe) is a semiconductor used as the absorber layer in highly promising sustainable thin film solar cells. The authors study the effect of Ar+ etching of copper deficient and zinc excess CZTSe thin films deposited on Mo/glass substrates on the surface elemental composition, measured by x-ray photoelectron spectroscopy, and photoluminescence (PL) spectra. Low temperature PL spectra reveal a broad asymmetrical band at 0.95 eV. The temperature and excitation intensity dependencies of this band suggest that it is a free-to-bound (FB) recombination of electrons from the conduction band with holes localized at an acceptor affected by potential fluctuations. The surface composition of the as grown films demonstrates a strong copper deficiency: [Cu]/[Zn + Sn] = 0.33. The etching of the film surface using Ar+ beam increases [Cu]/[Zn + Sn] to 0.51, which is significantly smaller than that of 0.78 in the bulk, measured by wavelength dispersive x-ray analysis, demonstrating the presence on the surface of a copper-depleted layer. The Ar+ etching drastically reduces the FB band intensity by a factor of 4.5, broadens it and develops a low energy tail. Ar ions displace atoms in CZTSe lattice creating primary radiation defects, vacancies, and interstitials, which recombine at room temperature forming antisite defects with deep energy levels. Some of them generate the observed low energy tail and increase the mean depth of potential fluctuation γ, determined from the shape of the low energy side of FB band, from 24 meV before Ar+ etching to 35 meV after. Other deep defects work as nonradiative recombination centers reducing the intensity of the FB band. [ABSTRACT FROM AUTHOR]

To realize spintronic devices based on topological insulators (TIs), well-defined interfaces between magnetic metals and TIs are required. Here, we characterize atomically precisely the interface between the 3d transition metal Fe and the TI Bi2Te3 at different stages of its formation. Using photoelectron diffraction and holography, we show that after deposition of up to 3 monolayers Fe on Bi2Te3 at room temperature, the Fe atoms are ordered at the interface despite the surface disorder revealed by our scanning-tunneling microscopy images. We find that Fe occupies two different sites: a hollow adatom deeply relaxed into the Bi2Te3 quintuple layers and an interstitial atom between the third (Te) and fourth (Bi) atomic layers. For both sites, our core-level photoemission spectra and density-functional theory calculations demonstrate simultaneous chemical bonding of Fe to both Te and Bi atoms. We further show that upon deposition of Fe up to a thickness of 20 nm, the Fe atoms penetrate deeper into the bulk forming a 2–5 nm interface layer containing FeTe. In addition, excessive Bi is pushed down into the bulk of Bi2Te3 leading to the formation of septuple layers of Bi3Te4 within a distance of ∼25 nm from the interface. Controlling the magnetic properties of the complex interface structures revealed by our work will be of critical importance when optimizing the efficiency of spin injection in TI-based devices. [ABSTRACT FROM AUTHOR]

Understanding how topologically protected surface states behave at surfaces and interfaces requires knowledge of the atomic structure. Whether the (111) surfaces of the prototypical topological insulators Bi2Se3 and Bi2Te3 are Bi or chalcogen terminated is the subject of current controversies. We employ photoelectron diffraction and holography, combining the advantages and avoiding the disadvantages of the contesting techniques previously used. We find bulklike chalcogen termination with a very small surface relaxation (<1%) in agreement with density functional theory simulations. We prove the chalcogen termination for cleaved crystals and epitaxial films which shows the robustness of our conclusions. [ABSTRACT FROM AUTHOR]