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1. Analog Content-Addressable Memory from Complementary FeFETs

14. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

15. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Toward Radiation-Tolerant Embedded Nonvolatile Memory

16. A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric.

17. Implementation of high-performance and high-yield nanoscale hafnium zirconium oxide based ferroelectric tunnel junction devices on 300 mm wafer platform

18. On the Feasibility of 1T Ferroelectric FET Memory Array

22. Monitoring a photovoltaic system during the partial solar eclipse of August 2017

25. Efficiency of Ferroelectric Field-Effect Transistors: An Experimental Study

28. Trap Capture and Emission Dynamics in Ferroelectric Field-Effect Transistors and their Impact on Device Operation and Reliability

39. Contributors

42. Increasing the Dielectric Constant of Organic Materials for Photovoltaics

48. Crystallization and grain growth behavior of CoFeB and MgO layers in multilayer magnetic tunnel junctions.

50. Luminescence properties of thin film Ta(sub2)Zn(sub3)O(sub8) and Mn doped Ta(sub2)Zn(sub3)O(sub8)

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