32 results on '"Kuppurao, Satheesh"'
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2. Selective Si:C Epitaxy in Recessed Areas and Characterization of the Material Properties
3. Integrating Selective Epitaxy in Advanced Logic & Memory Devices
4. Low Temperature Selective Si and Si-Based Alloy Epitaxy For Advanced Transistor Applications
5. High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
6. The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs
7. Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
8. Strained Ge0.91Sn0.09 Quantum Well p-MOSFETs
9. In situ steam generation: A new rapid thermal oxidation technique
10. High Tensile Strained In-Situ Phosphorus Doped Silicon Epitaxial Film for nMOS Applications
11. Fabrication of $\hbox{Si}_{1 - x}\hbox{Ge}_{x}/\hbox{Si}$ pMOSFETs Using Corrugated Substrates for Improved $I_{\rm ON}$ and Reduced Layout-Width Dependence
12. A Two Terminal Vertical Selector Device for Bipolar RRAM
13. Epitaxial Growth of Si/Si1-xGex Films on Corrugated Substrates for Improved pMOSFET Performance
14. Segmented-channel Si1−xGex/Si pMOSFET for improved ION and reduced variability
15. Selective Epitaxial Phosphorus-Doped SiGe Layers for Short-Channel Effect Reduction
16. Effects of Growth and Surface Cleaning Conditions on Strain Relaxation on SiGe Films beyond a Critical Thickness on Si(001) Substrate
17. Epitaxial Growth on High Aspect Ratio Structures
18. Heavily Phosphorus Doped Silicon Junctions for nMOS Applications
19. Low Temperature Selective Si and Si-Based Alloy Epitaxy For Advanced Transistor Applications
20. Low Temperature Selective Si and Si-Based Alloy Epitaxy For Advanced Transistor Applications.
21. Designing thermal environments to promote convex interface shapes during the vertical Bridgman growth of cadmium zinc telluride
22. On the effects of ampoule tilting during vertical Bridgman growth: three-dimensional computations via a massively parallel, finite element method
23. Analysis of interrupted growth strategies for cadmium telluride in an unseeded vertical Bridgman system
24. Modeling the vertical Bridgman growth of cadmium zinc telluride II. Transient analysis of zinc segregation
25. Modeling the vertical Bridgman growth of cadmium zinc telluride I. Quasi-steady analysis of heat transfer and convection
26. FINITE-ELEMENT FORMULATIONS FOR ACCURATE CALCULATION OF RADIANT HEAT TRANSFER IN DIFFUSE-GRAY ENCLOSURES
27. Fabrication of \Si1 - x\Gex/\Si pMOSFETs Using Corrugated Substrates for Improved ION and Reduced Layout-Width Dependence.
28. Integrating Selective Epitaxy in Advanced Logic & Memory Devices
29. Selective Si:C Epitaxy in Recessed Areas and Characterization of the Material Properties
30. Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology
31. Single-Wafer, Short Cycle Time: Wet Clean Technology.
32. Benefits of segmented Si/SiGe p-channel MOSFETs for analog/RF applications.
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