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2. Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM

3. OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers

4. 1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs

5. OLED Display with All Pixels Formed through RGB Side-by-side Patterning by Photolithography

6. Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c -axis aligned crystalline oxide semiconductor FET.

7. P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography

8. P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate

9. Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM

10. 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS

14. 9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c ‐Axis Aligned Crystalline‐Oxide Semiconductor

15. 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display

16. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography

17. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography

19. P‐151: Late‐News Poster:1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate

20. Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm

22. Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG

27. (Invited) Display and LSI Applications of Oxide Semiconductor LSIs (OS LSIs) Using Crystalline In–Ga–Zn Oxide (IGZO): Applications Related to Coronavirus COVID-19 Pandemic

29. Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm

30. P‐6: Student Poster:2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology

31. Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence

32. A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications

33. High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET

34. (Invited)Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI

35. Low-Power Display System Enabled by Combining Oxide-Semiconductor and Neural-Network Technologies

36. 16-1: Low-Power Oxide-Semiconductor Display System

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