37 results on '"Kunitake, Hitoshi"'
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2. Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
3. OLED Microdisplay With Monolithically Integrated CAAC-OS FET and Si CMOS Achieved by Two-Dimensionally Arranged Silicon Display Drivers
4. 1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
5. OLED Display with All Pixels Formed through RGB Side-by-side Patterning by Photolithography
6. Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c -axis aligned crystalline oxide semiconductor FET.
7. P‐130: 3207‐ppi, 1.50‐in. OLED Microdisplay with All Pixels Formed Through RGB Side‐by‐Side Patterning by Photolithography
8. P‐151: Late‐News Poster: 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
9. Effectiveness of c-Axis Aligned Crystalline IGZO FET as Selector Element and Ferroelectric Capacitor Scaling of 1T1C FeRAM
10. 1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS
11. C-axis aligned crystalline indium–gallium–zinc oxide ceramics and oxide semiconductor LSI as countermeasures against global warming
12. 5,291‐ppi OLED display enabled by monolithic integration of C ‐axis‐aligned crystalline IGZO FET and Si CMOS
13. 27‐1: Fabrication Method for Miniaturized CAAC‐OS FET for High‐Definition AR/VR Displays
14. 9‐1: Evaluation of X‐ray Resistance of Submicron‐Size c ‐Axis Aligned Crystalline‐Oxide Semiconductor
15. 32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
16. 32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
17. 10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
18. P‐6: Student Poster: 2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology
19. P‐151: Late‐News Poster:1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
20. Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm
21. 5291-ppi OLED Display Enabled by Monolithic Integration of C-axis-Aligned Crystalline IGZO FET and Si CMOS
22. Statistical Analysis on Threshold Voltage Variability of CAAC-IGZO FETs Using Large-Scale Array TEG
23. Stability of Crystalline IGZO Owing to Minute Crystal Region
24. Study on Negative-Bias Photodegradation Mechanism in IGZO FET with First -Principles Calculation
25. (Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI
26. A Compact Physics-Based Charge Core Model for CAAC In-Ga-Zn Oxide Multi-Gate FETs
27. (Invited) Display and LSI Applications of Oxide Semiconductor LSIs (OS LSIs) Using Crystalline In–Ga–Zn Oxide (IGZO): Applications Related to Coronavirus COVID-19 Pandemic
28. TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density
29. Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm
30. P‐6: Student Poster:2731ppi OLED Display with Low Power Consumption and Wide Viewing Angle Using OS/Si VLSI Process Technology
31. Crystalline IGZO ceramics (crystalline oxide semiconductor)–based devices for artificial intelligence
32. A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
33. High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET
34. (Invited)Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI
35. Low-Power Display System Enabled by Combining Oxide-Semiconductor and Neural-Network Technologies
36. 16-1: Low-Power Oxide-Semiconductor Display System
37. Design of millimeter-wave CMOS transmission-line-to-waveguide transitions
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