1. Preparation of Fe-doped semiconductor NiZrSn
- Author
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Kunihiko Maezawa, Tadashi Fukuhara, and Fangfang Wang
- Subjects
Materials science ,Spintronics ,business.industry ,Band gap ,Mechanical Engineering ,Metals and Alloys ,Analytical chemistry ,Mineralogy ,Microstructure ,Semiconductor ,Mechanics of Materials ,Electrical resistivity and conductivity ,Phase (matter) ,Materials Chemistry ,Crystallite ,Solubility ,business - Abstract
Fe-doped NiZrSn polycrystalline ingots were prepared using arc melting method. Microstructure and electrical properties of the ingots were investigated. According to the EDX results, the solubility of Fe in the C1 b phase of the NiZrSn is about 2% by arc melting method. The electrical resistivity of low Fe-doped NiZrSn shows semiconducting temperature dependence and the transport gap estimated from activation plot is about 80 meV.
- Published
- 2010
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