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Your search keyword '"Kukreja, L.M."' showing total 236 results
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236 results on '"Kukreja, L.M."'

41. Structural, morphological, and electrical characterization of heteroepitaxial ZnO thin films deposited on Si(100) by pulsed laser deposition: Effects of annealing (800 degree C) in air

Author

Jejurikar, S.M., Banpurkar, A.G., Limaye, A.V., Patil, S.I, Date, S.K., Adhi, K.P., Misra, P., Kukreja, L.M., and Bathe, Ravi

Subjects
Zinc oxide -- Optical properties, Dielectric films -- Optical properties, Thin films -- Optical properties, Ablation (Vaporization technology) -- Research, Silicon compounds -- Optical properties, Physics
Abstract

Pulsed laser deposition technique was used for growing thin films of ZnO on Si(100) substrate held at different temperatures (T(sub s)). All the deposited films showed a preferential c-axis orientation associated with varying grain size as a function of T(sub s) ranging from 100 to 600 degree Celsius.

Published
2006

44. Epi-n-IZO thin films/<100> Si, GaAs and InP by L-MBE--a novel feasibility study for SIS type solar cells

Author

Ramamoorthy, K., Jayachandran, M., Sankaranarayanan, K., Misra, Pankaj, Kukreja, L.M., and Sanjeeviraja, C.

Subjects
Solar energy -- Research, Thin films -- Research, Dielectric films -- Research, Earth sciences, Petroleum, energy and mining industries
Abstract

High quality epitaxial indium zinc oxide (heavily indium oxide doped) (epi-n-IZO) thin films were optimized by laser-molecular beam epitaxy (L-MBE) i.e., pulsed laser deposition (PLD) technique for fabricating novel iso- and hetero-semiconductor-insulator-semiconductor (SIS) type solar cells using Johnson Matthey 'specpure'--grade 90% [In.sub.2][O.sub.3] mixed 10% ZnO (as commercial indium tin oxide (ITO) composition) pellets. The effects of substrate temperatures, substrates and heavy indium oxide incorporation on IZO thin film growth, opto-electronic properties with silicon (Si), gallium arsenide (GaAs) and indium phosphide (InP) wafers were studied. As well as the feasibility of developing some novel models of iso- and hetero-SIS type solar cells using epi-IZO thin films as transparent conducting oxides (TCOs) and oriented Si, GaAs and InP wafers as base substrates was also studied simultaneously. The optimized films were highly oriented, uniform, single crystalline approachment, nano-crystalline, anti-reflective (AR) and epitaxially lattice matched with Si, GaAs and InP wafers without any buffer layers. The optical transmission T (max) [greater than or equal to] 95% is broader and absolute rivals that of other TCOs such as ITO. The highest conductivity observed is [sigma] = 0.47 x [10.sup.3] [[ohm].sup.-1] [cm.sup.-1] (n-type), carrier density n = 0.168 x [10.sup.20] [cm.sup.-3] and mobility [mu] = 123 [cm.sup.2]/Vs. From optoelectronic characterizations, the solar cell characteristics and feasibilities of fabricating respective epi-n-TCO/ wafer SIS type solar cells were confirmed. Also, the essential parameters of these cells were calculated and tabulated. We hope that these data be helpful either as a scientific or technical basis in semiconductor processing. PACS: 68.55; 81.15.G; 73.60.F; 72.20; 72.80.E Keywords: Laser epitaxy; Semiconducting materials; Thin film structure and morphology; Buffer layer on InP; Solar cells

Published
2004

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