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20 results on '"Kruth, Maximilian"'

4. Scalable Non‐Volatile Tuning of Photonic Computational Memories by Automated Silicon Ion Implantation

Author

Varri, Akhil, primary, Taheriniya, Shabnam, additional, Brückerhoff‐Plückelmann, Frank, additional, Bente, Ivonne, additional, Farmakidis, Nikolaos, additional, Bernhardt, Daniel, additional, Rösner, Harald, additional, Kruth, Maximilian, additional, Nadzeyka, Achim, additional, Richter, Torsten, additional, Wright, Christopher David, additional, Bhaskaran, Harish, additional, Wilde, Gerhard, additional, and Pernice, Wolfram H.P., additional

Published
2023
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6. Development of a Bioreactor-Coupled Flow-Cell Setup for 3D In Situ Nanotomography of Mg Alloy Biodegradation

Author

Reimers, Jan, primary, Trinh, Huu Chánh, additional, Wiese, Björn, additional, Meyer, Sebastian, additional, Brehling, Jens, additional, Flenner, Silja, additional, Hagemann, Johannes, additional, Kruth, Maximilian, additional, Kibkalo, Lidia, additional, Ćwieka, Hanna, additional, Hindenlang, Birte, additional, Lipinska-Chwalek, Marta, additional, Mayer, Joachim, additional, Willumeit-Römer, Regine, additional, Greving, Imke, additional, and Zeller-Plumhoff, Berit, additional

Published
2023
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11. Towards Ptychography with Structured Illumination, and a Derivative-Based Reconstruction Algorithm

Author

Van den Broek, W, Schloz, M., Pekin, T.C., Lu, Penghan, Kruth, Maximilian, Grillo, Dunin-Borkowski, Rafal, Miller, R.J.D., and Koch, C.T.

Subjects
Q-sort
Abstract

The method inverse dynamical electron scattering (IDES) [1,2] offers a framework to retrieve the electrostatic potential of the object from arbitrary detection geometries in the transmission electron microscope (TEM)...

Published
2020

13. Au Nanoparticles as Template for Defect Formation in Memristive SrTiO3 Thin Films

Author

Raab, Nicolas, Schmidt, Dirk Oliver, Du, Hongchu, Kruth, Maximilian, Simon, Ulrich, and Dittmann, Regina

Subjects
lcsh:Chemistry, TheoryofComputation_MATHEMATICALLOGICANDFORMALLANGUAGES, lcsh:QD1-999, resistive switching, memristive devices, ddc:540, SrTiO3, Au nanoparticles, memristor
Abstract

Nanomaterials 8(11), 869 (2018). doi:10.18154/RWTH-2019-00092 special issue: "Special Issue "Nanoscale Surface Engineering" / Guest Editor Dr. Stéphane Mornet, Dr. Glenna Drisko", Published by MDPI, Basel

Published
2018

19. In Situ TEM Analysis of Organic-Inorganic Metal-Halide Perovskite Solar Cells under Electrical Bias

Author

Jeangros, Quentin, Duchamp, Martial, Werner, Jeremie, Kruth, Maximilian, Dunin-Borkowski, Rafal E., Niesen, Bjoern, Ballif, Christophe, and Hessler-Wyser, Aicha

Subjects
photovoltaics, Characterization, microstructure, perovskite solar cell, in situ transmission electron microscopy, degradation
Abstract

Changes in the nanostructure of methylammonium lead iodide (MAPbI(3)) perovskite solar cells are assessed as a function of current-voltage stimulus by biasing thin samples in situ in a transmission electron microscope. Various degradation pathways are identified both in situ and ex situ, predominantly at the positively biased MAPbI(3) interface. Iodide migrates into the positively biased charge transport layer and also volatilizes along with organic species, which triggers the nucleation of PbI2 nanoparticles and voids and hence decreases the cell performance.

20. Dielectric Properties and Ion Transport in Layered MoS 2 Grown by Vapor-Phase Sulfurization for Potential Applications in Nanoelectronics.

Author

Belete M, Kataria S, Koch U, Kruth M, Engelhard C, Mayer J, Engström O, and Lemme MC

Abstract

Electronic and dielectric properties of vapor-phase grown MoS 2 have been investigated in metal/MoS 2 /silicon capacitor structures by capacitance-voltage and conductance-voltage techniques. Analytical methods confirm the MoS 2 layered structure, the presence of interfacial silicon oxide (SiO x ) and the composition of the films. Electrical characteristics in combination with theoretical considerations quantify the concentration of electron states at the interface between Si and a 2.5-3 nm thick silicon oxide interlayer between Si and MoS 2 . Measurements under electric field stress indicate the existence of mobile ions in MoS 2 that interact with interface states. On the basis of time-of-flight secondary ion mass spectrometry, we propose OH - ions as probable candidates responsible for the observations. The dielectric constant of the vapor-phase grown MoS 2 extracted from CV measurements at 100 kHz is 2.6 to 2.9. The present study advances the understanding of defects and interface states in MoS 2 . It also indicates opportunities for ion-based plasticity in 2D material devices for neuromorphic computing applications., Competing Interests: The authors declare no competing financial interest.

Published
2018
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