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Your search keyword '"Kruchinin, V. N."' showing total 152 results
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152 results on '"Kruchinin, V. N."'

17. Optical Properties of Ferroelectric Films HfxZryO2 and La:HfxZryO2 according to Ellipsometry Data.

Author

Kruchinin, V. N., Spesivtsev, E. V., Rykhlitsky, C. V., Gritsenko, V. A., Mehmood, F., Mikolajick, T., and Schroeder, U.

Subjects
*OPTICAL properties, *RANDOM access memory, *ELLIPSOMETRY, *FLASH memory, *OXIDE coating
Abstract

Recently ferroelectric properties have been found in hafnia-based nanosized films. Such films are of the utmost interest for development of a universal memory, which combines the advantages of random access memory and flash memory. The paper studies optical properties of hafnia-zirconium oxide films H-fxZryO2 and lanthanum-alloyed hafnia-zirconium oxide films La:HfxZryO2. Fluctuations of thickness in HfxZryO2 do not exceed 3.5%, fluctuations of thickness in La:HfxZryO2 films—3.2%. Optical properties are analyzed based on effective-medium theory. According to effective-medium theory data, HfxZryO2 films contain 46% HfO2, 54% ZrO2, La:HfxZryO2 films contain 47.5% HfO2, 52.4% ZrO2, 2.5% La2O3. [ABSTRACT FROM AUTHOR]

Published
2023
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18. A terahertz ellipsometer

Author

Azarov, I. A., Shvets, V. A., Prokopiev, V. Yu., Dulin, S. A., Rykhlitskii, S. V., Choporova, Yu. Yu., Knyazev, B. A., Kruchinin, V. N., and Kruchinina, M. V.

Published
2015
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27. The method for diagnosing the activity of inflammatory bowel diseases based on a combination of electrical and viscoelastic parameters of erythrocytes and the level of fecal calprotectin

Author

Kruchinina, M. V., primary, Svetlova, I. O., additional, Azgaldyan, A. V., additional, Osipenko, M. F., additional, Valuiskikh, E. Yu., additional, Gromov, A. A., additional, Generalov, V. M., additional, Kruchinin, V. N., additional, Yakovina, I. N., additional, and Osipenko, I. V., additional

Published
2021
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34. Optical and electrochromic properties of thin films of ambipolar polyimides with pendant groups based on thioxanthenone derivatives

Author

null Gritsenko V. A., null Spesivtsev E. V., null Rykhlitsky S. V., null Shundrina I. K., null Shundrin L. A., null Odintsov D. S., and null Kruchinin V. N.

Abstract

The optical and electrochromic properties of thin films obtained by centrifugation from solutions containing ambipolar polyimides with pendant groups based on 9H-thioxanthene-9-one and its S-dioxide derivative are studied using spectral ellipsometry, spectrophotometry, and spectroelectrochemistry. It is shown that the spectral dependences of the refractive index n(E) and the absorption coefficient α(E) as well as the electrochromic properties of polyimide thin films under electrochemical reduction and oxidation conditions strongly depend on the type of the pendant group. Based on the estimates of the band gap Eg a conclusion is made about the possible promising use of thin films of polyimides as working layers in memristors of a new type. Keywords: memristors, dielectric films, ambipolar polyimides, ellipsometry, electrochromism.

Published
2022
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39. Charge Transport in Nonstoichiometric SiOx Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance.

Author

Iskhakzay, R. M. Kh., Kruchinin, V. N., Aliev, V. Sh., Gritsenko, V. A., Dementieva, E. V., and Zamoryanskaya, M. V.

Subjects
*HYDROGEN plasmas, *PLASMA resonance, *CYCLOTRON resonance, *CATHODOLUMINESCENCE, *SILICON oxide, *ELECTRON plasma, *ELECTRON traps
Abstract

Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation. [ABSTRACT FROM AUTHOR]

Published
2022
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41. Short-Range Order in Amorphous and Crystalline Ferroelectric Hf0.5Zr0.5O2

Author

Erenburg, S. B., Trubina, S. V., Kvashnina, K. O., Kruchinin, V. N., Gritsenko, V. V., Chernikova, A. G., and Markeev, A. M.

Abstract

The microstructures of amorphous and polycrystalline ferroelectric Hf0.5Zr0.5O2 films are studied by X-ray spectroscopy and ellipsometry. EXAFS spectra demonstrate that the amorphous film consists of an “incompletely mixed” solid solution of metallic oxides HfO2 and ZrO2. After rapid thermal annealing, the mixed Hf0.5Zr0.5O2 oxide films have a more ordered polycrystalline structure, and individual Hf and Zr monoxide islands form in the films. These islands are several nanometers in size and have a structure that is similar to the monoclinic structure of HfO2 and ZrO2. The presence of the HfO2 and ZrO2 phases in the Hf0.5Zr0.5O2 films is also detected by ellipsometry

Published
2018

42. Nanoscale Potential Fluctuations in Zirconium Oxide and the Flash Memory Based on Such Fluctuations

Author

Gritsenko, V. A., Perevalov, T. V., Kruchinin, V. N., Aliev, V. S., Gerasimova, A. K., Erenburg, S. B., Trubina, S. V., Kvashnina, K. O., and Prosvirin, I. P.

Abstract

X-ray photoelectron spectroscopy, EXAFS, XANES, spectral ellipsometry and quantum-chemistry calculations were used to examine the atomic and electronic structure of non-stoichiometric amorphous ZrOx slightly enriched with zirconium. The experimental data show that the ZrOx material consists of stoichiometric ZrO2, metallic Zr and zirconium suboxides ZrOy. The structure of ZrOx is analyzed using the Random Bonding and Random Mixture models. A model of nanoscale spatial potential fluctuations in ZrOx is substantiated. In this model, the potential fluctuations for electrons and holes arise due to the local fluctuations of bandgap energy in the range from 0 to 5.4 eV. A ZrOx-based flash memory element with giant retention time is proposed

Published
2018

47. Optical Properties of the SiOx (x < 2) Thin Films Obtained by Hydrogen Plasma Processing of Thermal Silicon Dioxide.

Author

Kruchinin, V. N., Perevalov, T. V., Aliev, V. Sh., Iskhakzai, R. M. Kh., Spesivtsev, E. V., Gritsenko, V. A., and Pustovarov, V. A.

Subjects
*PLASMA materials processing, *HYDROGEN plasmas, *OPTICAL properties, *THERMAL plasmas, *SILICA
Abstract

The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found that the plasma processing of the films leads to their oxygen depletion and the formation of nonstoichiometric oxide SiOx< 2. The parameter x of the obtained SiOx films has been determined by comparing the experimental spectral dependence of the refractive index with the dependence obtained theoretically using the ab initio calculation. It is shown that an increase in the time of processing of thermal dioxide SiO2 in a hydrogen plasma leads to an increase in the refractive index of the film, as well as in the degree of its oxygen depletion. The dependence of the parameter x of the investigated films on the hydrogen plasma processing time is plotted. [ABSTRACT FROM AUTHOR]

Published
2020
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