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Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates opens the route to achieving high intrinsic mobility and simultaneously controlling doping type ($n$- and $p$-) and concentration over a wide range. We establish that the intra-flake mobility is high by observing a linear magnetoresistance of such solution-processed graphene laminates and using it to devolve the inter-flake tunneling and intra-layer magnetotransport. Consequently, we determine the temperature dependences of the inter- and intra-layer characteristics, which both appear to be dominated by phonon-assisted processes at temperature $T>$20 Kelvin. In particular, we identify the efficiency of phonon-assisted tunneling as the main limiting factor for electrical conductivity in graphene laminates at room temperature. We also demonstrate a thermoelectric sensitivity of around 50 ${\mu}$V K$^{-1}$ in a solution-processed metal-free graphene-based thermocouple.

Thermoelectric effects are highly sensitive to the asymmetry in the density of states around the Fermi energy and can be exploited as probes of the electronic structure. We experimentally study thermopower in high-quality monolayer graphene, within heterostructures consisting of complete hBN encapsulation and 1D edge contacts, where the graphene and hBN lattices are aligned. When graphene is aligned to one of the hBN layers, we demonstrate the presence of additional sign reversals in the thermopower as a function of carrier density, directly evidencing the presence of the moir\'e superlattice. We show that the temperature dependence of the thermopower enables the assessment of the role of built-in strain variation and van Hove singularities and hints at the presence of Umklapp electron-electron scattering processes. As the thermopower peaks around the neutrality point, this allows to probe the energy spectrum degeneracy. Further, when graphene is double-aligned with the top and bottom hBN crystals, the thermopower exhibits features evidencing multiple cloned Dirac points caused by the differential super-moir\'e lattice. For both cases we evaluate how well the thermopower agrees with Mott's equation. Finally, we show the same superlattice device can exhibit a temperature-driven thermopower reversal from positive to negative and vice versa, by controlling the carrier density. The study of thermopower provides an alternative approach to study the electronic structure of 2D superlattices, whilst offering opportunities to engineer the thermoelectric response on these heterostructures., Comment: 9 pages, 3 figures

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions., Comment: 15 pages, 3 figures

Electrically conductive, polymeric materials that maintain their conductivity even when under significant mechanical deformation are needed for actuator electrodes, conformable electromagnetic shielding, stretchable tactile sensors and flexible energy storage. The challenge for these materials is that the percolated, electrically conductive networks tend to separate even at low strains, leading to significant piezoresistance. Herein, deformable conductors were fabricated by spray-coating a nitrile substrate with a graphene-elastomer solution. The coatings showed only slight increase in electrical resistance after thousands of bending cycles and repeated folding-unfolding events. The deformable conductors doubled their electrical resistance at 12% strain and were washable without changing their electrical properties. The conductivity-strain behaviour was modelled by considering the nanofiller separation upon deformation. To boost the conductivity at higher strains, the production process was adapted by stretching the nitrile substrate before spraying, after which it was released. This adaption meant that the electrical resistance doubled at 25 % strain. The electrical resistance was found sufficiently low to give a 1.9 dB/{\mu}m shielding in the 8-12 GHz electromagnetic band. The physical and electrical properties, including the EM screening, of the flexible conductors, were found to deteriorate upon cycling but could be recovered through reheating the coating., Comment: 29 pages, 6 figures

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications., Comment: 13 pages, 3 figures

We use scanning near-field optical microscopy to study the response of hexagonal boron nitride nanocones at infrared frequencies, where this material behaves as a hyperbolic medium. The obtained images are dominated by a series of hot rings that occur on the sloped sidewalls of the nanocones. The ring positions depend on the incident laser frequency and the nanocone shape. Both dependences are consistent with directional propagation of hyperbolic phonon polariton rays that are launched at the edges and zigzag through the interior of the nanocones, sustaining multiple internal reflections off the sidewalls. Additionally, we observe a strong overall enhancement of the near-field signal at discrete resonance frequencies. These resonances attest to low dielectric losses that permit coherent standing waves of the sub-diffractional polaritons to form. We comment on potential applications of such shape-dependent resonances and the field concentration at the hot rings., Comment: Accepted for publication in Nano Letters

Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride has already been acknowledged and these materials have been suggested as novel core materials for thermal management in electronics. However, it was not clear if mass produced flakes of hexagonal boron nitride would allow one to achieve an industrially-relevant value of thermal conductivity. Here we demonstrate that laminates of hexagonal boron nitride exhibit thermal conductivity of up to 20 W/mK, which is significantly larger than that currently used in thermal management. We also show that the thermal conductivity of laminates increases with the increasing volumetric mass density, which creates a way of fine-tuning its thermal properties., Comment: 6 pages, 4 figures

Optical imaging beyond the diffraction limit was one of the primary motivations for negative-index metamaterials, resulting in Pendry's perfect lens and the more attainable superlens. While these approaches offer sub-diffractional resolution, they do not provide a mechanism for magnification of the image. Hyperbolic (or indefinite-permittivity) metamaterials have been theoretically considered and experimentally demonstrated to provide simultaneously subdiffractive imaging and magnification; however, they are plagued with low efficiency and complex fabrication. In this work, we present theoretical and experimental studies of near-field optical imaging through a flat slab of the low-loss, natural hyperbolic material, hexagonal boron nitride (hBN). This thin hBN layer exhibits wavelength-dependent multifunctional operations, offering both an enhanced near-field imaging of single buried objects with down to lambda/32 resolution (0.4 um at lambda=12.8 um), as well as enabling an enlarged reconstruction of the geometric outline of the investigated objects. Both the excellent resolution and the multifunctional operation can be explained based on the volume-confined, wavelength-dependent propagation angle of Type I hyperbolic polaritons. Our results provide both the understanding of near-field imaging performance through this natural hyperbolic media, as well as inspire their exciting potential for guiding and sensing of light at an extreme sub-diffractional scale.

Entanglement, being at the heart of the Einstein-Podolsky-Rosen (EPR) paradox, is a necessary ingredient in processing quantum information. Cooper pairs in superconductors - being composites of two fully entangled electrons - can be split adiabatically, thus forming entangled electrons. We fabricated such electron splitter by contacting an aluminum superconductor strip at the center of a suspended InAs nanowire; terminated at both ends with two normal metallic drains. Intercepting each half of the nanowire by gate - induced Coulomb blockaded quantum dot strongly impeded the flow of Cooper pairs due to large charging energy, while still permitting passage of single electrons. Here, we provide conclusive evidence of extremely high efficiency Cooper pairs splitting via observing positive average (conductance) and time (shot noise) correlations of the split electrons in the two opposite drains of the nanowire. Moreover, The actual charge of the injected quasiparticles was verified by shot noise measurements.

A wide-band current preamplifier based on a composite operational amplifier is proposed. It has been shown that the bandwidth of the preamplifier can be significantly increased by enhancing the effective open-loop gain of the composite preamplifier. The described preamplifier with current gain 10$^7$ V/A showed the bandwidth of about 100 kHz with 1 nF input shunt capacitance. The current noise of the amplifier was measured to be about 46 fA/$\sqrt{\rm Hz}$ at 1 kHz, close to the design noise minimum. The voltage noise was found to be about 2.9 nV/$\sqrt{\rm Hz}$ at 1 kHz, which is in a good agreement with the value expected for the operational amplifier used in the input stage. By analysing the total noise produced by the preamplifier we found the optimal frequency range suitable for the fast lock-in measurements to be from 1 kHz to 2 kHz. To get the same signal-to-noise ratio, the reported preamplifier requires roughly 10% of the integration time used in measurements made with a conventional preamplifier., Comment: 5 pages, 4 figures

Encouraged by the recent real-time renormalization group results we carried out a detailed analysis of the nonequilibrium Kondo conductance observed in an InAs nanowire-based quantum dot and found them to be in excellent agreement. We show that in a wide range of bias the Kondo conductance zero-bias anomaly is scaled by the Kondo temperature to a universal lineshape predicted by the numerical study. The lineshape can be approximated by a phenomenological expression of a single argument $eV_{sd}=k_{\rm B}T_{\rm K}$. The knowledge of an analytical expression for the lineshape provides an alternative way for estimation of the Kondo temperature in a real experiment, with no need for time consuming temperature dependence measurements of the linear conductance., Comment: 5 pages, 3 figures

We report on a comprehensive study of spin-1/2 Kondo effect in a strongly-coupled quantum dot realized in a high-quality InAs nanowire. The nanowire quantum dot is relatively symmetrically coupled to its two leads, so the Kondo effect reaches the Unitary limit. The measured Kondo conductance demonstrates scaling with temperature, Zeeman magnetic field, and out-of-equilibrium bias. The suppression of the Kondo conductance with magnetic field is much stronger than would be expected based on a g-factor extracted from Zeeman splitting of the Kondo peak. This may be related to strong spin-orbit coupling in InAs., Comment: 12 pages, 7 figures. Revised version accepted for publication

We report on observation of coherent electron transport in suspended high-quality InAs nanowire-based devices. The InAs nanowires were grown by low-temperature gold-assisted vapor-liquid-solid molecular-beam-epitaxy. The high quality of the nanowires was achieved by removing the typically found stacking-faults and reducing possible Au incorporation. Minimizing substrate-induced scattering in the device was achieved by suspending the nanowires over predefined grooves. Coherent transport involving more than a single one-dimensional mode transport, was observed in the experiment, manifested by Fabry-P\'erot conductance oscillations. The length of the Fabry-P\'erot interferometer, deduced from the period of the conductance oscillations, was found to be close to the physical length of the device. The high oscillations visibility imply nearly ballistic electron transport through the nanowire., Comment: This manuscript has been withdrawn on request of Nano Letters Editorial Office