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Metal oxide (MO) semiconductors are widely used in electronic devices due to their high optical transmittance and promising electrical performance. This work describes the advancement toward an eco-friendly, streamlined method for preparing thin-film transistors (TFTs) via a pure water-solution blade-coating process with focus on a low thermal budget. Low temperature and rapid annealing of triple-coated indium oxide thin-film transistors (3C-TFTs) and indium oxide/zinc oxide/indium oxide thin-film transistors (IZI-TFTs) on a 300 nm SiO2 gate dielectric at 300 $^{\circ}$C for only 60 s yields devices with an average field effect mobility of 10.7 and 13.8 cm2/Vs, respectively. The devices show an excellent on/off ratio (>10^6), and a threshold voltage close to 0 V when measured in air. Flexible MO-TFTs on polyimide substrates with AlOx dielectrics fabricated by rapid annealing treatment can achieve a remarkable mobility of over 10 cm2/Vs at low operating voltage. When using a longer post-coating annealing period of 20 min, high-performance 3C-TFTs (over 18 cm2/Vs) and IZI-TFTs (over 38 cm2/Vs) using MO semiconductor layers annealed at 300 $^{\circ}$C are achieved.

2D Ruddlesden - Popper perovskites are promising candidates for energy harvesting applications due to their tunable optical properties and excellent ambient stability. Moreover, they are solution-processable and compatible with upscalable manufacturing via various printing techniques. Unfortunately, such methods often induce large degrees of heterogeneity due to poorly controlled crystallization. Here, we address this issue by blending the well-known 2D perovskite (PEA)2PbBr4 with an organic small-molecule, namely C8-BTBT, employed as an additive with different blending ratios. Using terahertz (THz) absorption and temperature-dependent photoluminescence (PL) spectroscopy techniques we observe that with the C8-BTBT additive the photophysical properties are altered while the perovskite structure in the film remains unaffected. More precisely, the inclusion of trace amounts of C8-BTBT in the hybrid films results in defect passivation at perovskite platelet boundaries and at the surfaces, as indicated by increased carrier lifetimes and substantially increased photoluminescence quantum yields (PLQY). This in turn improves the responsivity of photodetectors using the 2D perovskite as active layer. Our study highlights a straightforward strategy for fabricating high-quality 2D perovskites via large-area processing techniques.

Structural colors can be induced on metals not only to fabricate logos or decorative motives but also to embed anti-counterfeit features for product protection. In this study, stainless steel (EN 1.4301) plates are colorized by growing a thin oxide layer using direct laser writing (DLW) and hidden anti-counterfeit measures are included on their surfaces by direct laser interference patterning (DLIP) processing. The periodic microstructures resulting from the DLIP treatment have a spatial period of 1 um and act as relief diffraction gratings, featuring a characteristic diffraction pattern. These microstructures are not visible to the human eye but are easily detectable upon shining a coherent beam on the surface. Furthermore, the reflectance over the visible spectrum of the colorized surfaces with and without the DLIP microtexture is measured, giving low differences in the color perception following the so-called "CIE L*a*b*" color space. Finally, a demonstrator is fabricated, in which colorized fields with and without the security features are shown.

Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (VOC) and consequently, its performance. We explore a series of four thiaazulenic derivatives that exhibit increasing dipole moments and demonstrate that these molecules can be introduced into the solution-processed BCP layer to effectively increase the built-in potential within the device, without altering any of the other device layers. As a result the VOC of the devices is enhanced by up to 130 mV with larger dipoles resulting in higher VOCs. To investigate the limitations of this approach, we employ numerical device simulations that demonstrate that the highest dipole derivatives used in this work eliminate all limitations on the VOC stemming from the built-in potential of the device.