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The ESR spectrum of a powder sample of the metal-organic complex Cu(C10H8N2)(H2O)2SO4 is investigated in the temperature interval 2–30 K. It is found that the orbital ground level of the Cu2+ ion in this compound is the Kramers doublet |x2-y2>. The temperature dependences of the effective g-factor components and of the resonance linewidth ΔH of individual powder particles are obtained. Low-temperature broadening of the resonance line connected with short-range magnetic order in the system is observed. An estimate of the value of the exchange coupling in the magnetic system is made. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The ESR spectrum of a powder sample of the metal-organic complex Cu(C10H8N2)(H2O)2SO4 is investigated in the temperature interval 2–30 K. It is found that the orbital ground level of the Cu2+ ion in this compound is the Kramers doublet |x2-y2>. The temperature dependences of the effective g-factor components and of the resonance linewidth ΔH of individual powder particles are obtained. Low-temperature broadening of the resonance line connected with short-range magnetic order in the system is observed. An estimate of the value of the exchange coupling in the magnetic system is made. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Abstract: Specific heat and susceptibility measurements of Cu(D2O)2(C2H6D2N2)SO4 have been performed to investigate the influence of the partial deuteration on the magnetic properties of Cu(H2O)2(C2H8N2)SO4 — a representative of an spatially anisotropic triangular antiferromagnet with intralayer exchange coupling . The analysis of experimental data at helium temperatures revealed a slight, less than 10% reduction of magnetic coupling as well as ordering temperature. The origin of the observed behavior is discussed. [Copyright &y& Elsevier]

Type-II heterostructures (HSs) are essential components of modern electronic and optoelectronic devices. Earlier studies have found that in type-II transition metal dichalcogenide (TMD) HSs, the dominating carrier relaxation pathway is the interlayer charge transfer (CT) mechanism. Here, this report shows that, in a type-II HS formed between monolayers of MoSe 2 and ReS 2 , nonradiative energy transfer (ET) from higher to lower work function material (ReS 2 to MoSe 2 ) dominates over the traditional CT process with and without a charge-blocking interlayer. Without a charge-blocking interlayer, the HS area shows 3.6 times MoSe 2 photoluminescence (PL) enhancement as compared to the MoSe 2 area alone. In a completely encapsulated sample, the HS PL emission further increases by a factor of 6.4. After completely blocking the CT process, more than 1 order of magnitude higher MoSe 2 PL emission was achieved from the HS area. This work reveals that the nature of this ET is truly a resonant effect by showing that in a similar type-II HS formed by ReS 2 and WSe 2 , CT dominates over ET, resulting in a severely quenched WSe 2 PL. This study not only provides significant insight into the competing interlayer processes but also shows an innovative way to increase the PL emission intensity of the desired TMD material using the ET process by carefully choosing the right material combination for HS.