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Analytical expressions for the low-field mobility in heavily doped 3D, 2D, and 1D semiconductor structures are obtained using the quantum-kinetic approach. The study takes into account the multi-ion (M-ion) scattering of charge carriers by ionized impurities. The calculated dependences of the carrier mobility on doping concentration are compared with experiment in the heavily doped bulk materials (3D) Si, InP, GaAs, n-In0.49Ga0.51P, in heavily doped In0.15Ga0.85As quantum wells and InN nanowires, respectively. When calculating mobility in n-Si, the anisotropic effective masses of electrons in the valleys are taken into account. We explain the difference in the electron mobility of n-Si bulk crystals heavily doped by phosphorus and arsenic in the framework of the M-ion scattering model, which considers the scattering of electrons by interaction potentials with two characteristic lengths: the screening length and the effective radius of the doping ion. The number of ions M participating in the scattering process depends on the effective masses of charge carriers. For the light carriers with effective masses m < 0.1 m 0 (m 0 is the free electron mass), the two-ion (M = 2) scattering is more probable. For carriers with higher effective masses, three- and four-ion scattering is relevant. [ABSTRACT FROM AUTHOR]

Herein, the low‐field mobility in bulk, multilayer, and monolayer of molybdenum disulfide (MoS2) is calculated using a quantum kinetic approach. Analytical expressions are obtained for mobility of 3D and 2D electrons for scattering by out‐of‐plane flexural and in‐plane acoustic phonons (deformation potential and piezoelectric scattering), nonpolar and polar optical (PO) phonons, charged impurities, and surface roughness. It is shown that the known experimental Hall data in bulk MoS2 should be analyzed in the presence of two types of free electrons contributing to the charge transport: 3D electrons in the conduction band and 2D electrons in the quantum layers. Calculations show that the electron mobility in bulk, multilayer, and monolayer MoS2 is mainly limited by acoustic (deformation potential) and PO phonons scatterings in a wide temperature range of 100–700 K. For temperatures below 100 K, electron mobility is determined by the ionized impurity scattering. [ABSTRACT FROM AUTHOR]