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Your search keyword '"Kozlovski, V. V."' showing total 175 results
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175 results on '"Kozlovski, V. V."'

20. Vtiamin®-Based Water Chemistry for Combined-Cycle Units.

Author

Suslov, S. Yu., Kirilina, A. V., Nartya, E. F., Zidikhanova, A. A., and Kozlovski, V. V.

Abstract

Despite the long-term operation of CCGT units, there are still no approved water-chemistry standards. Equipment suppliers set their own standards based on foreign requirements. Some plant operators use phosphate- ammonia, others choose ammonia, and many use amines. All they first used Helamin® chemicals. However, as problems with their use were identified and as other types of chemicals appeared, some TPPs switched to using them. Based on its experience, a review of foreign standards, and a study of the properties of amine-based chemicals used at power plants, the Water Technologies company developed a Vtiamin® KR-33 complex chemical, in accordance with the import substitution program. Its effectiveness for maintaining the water chemistry of CCGT power units is shown. [ABSTRACT FROM AUTHOR]

Published
2024
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21. Investigation of the Cr3+ Impurity Luminescence in Proton-Irradiated β-Ga2O3.

Author

Davydov, V. Yu., Smirnov, A. N., Eliseyev, I. A., Kitaev, Yu. E., Sharofidinov, S. S., Lebedev, A. A., Panov, D. Yu., Spiridonov, V. A., Bauman, D. A., Romanov, A. E., and Kozlovski, V. V.

Subjects
ACTION spectrum, IONS spectra, LUMINESCENCE, PHOTOLUMINESCENCE, DOSIMETERS
Abstract

Proton irradiation of β-Ga2O3 crystals has been established to lead to a significant increase in the amount of Cr3+ ions being active in luminescence. Using angle-resolved luminescence, the features of the spectra of Cr3+ ions were studied. The high sensitivity of photoluminescence spectra and the related selection rules to the local symmetry of Cr3+ ions in the β-Ga2O3 matrix has been found. The results obtained indicate the potential possibility of using β-Ga2O3 crystals as optical dosimeters of proton irradiation. [ABSTRACT FROM AUTHOR]

Published
2024
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28. Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation.

Author

Kozlovski, V. V., Vasil'ev, A. E., Lebedev, A. A., Zhurkin, E. E., Levinshtein, M. E., and Strelchuk, A. M.

Abstract

Using the mathematical modeling of a displacement cascade in two wide-gap semiconductors based on gallium, gallium oxide (Ga2O3), and gallium nitride (GaN), the features of the generation of Frenkel pairs during the scattering of protons with energies of 8 and 15 MeV are considered. The number of displacements created not only by primary knocked-out atoms, but also by recoil atoms generated in displacement cascades is calculated for the first time. Calculations show that under the proton irradiation of Ga2O3, for example, the fraction of vacancies in the oxygen sublattice created directly by protons is only 12%. The remaining 88% are created by recoil atoms in cascade processes. For the gallium sublattice, these fractions are 25 and 75%, respectively. Therefore, the processes of compensating the conductivity of GaN and Ga2O3 observed under proton irradiation will be determined by deep centers created not by primary knocked-out atoms, but by recoil atoms formed in displacement cascades. A comparison with experimental data is made, and the fraction of Frenkel pairs dissociating during irradiation is estimated. [ABSTRACT FROM AUTHOR]

Published
2023
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41. Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes.

Author

Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., and Palmour, J. W.

Subjects
*SCHOTTKY barrier diodes, *PROTONS, *IRRADIATION, *RELAXATION (Nuclear physics), *COMPOSITE particles (Nuclear particles)
Abstract

The current voltage characteristics and the low-frequency noise in high voltage 4H-SiC junction barrier Schottky diodes irradiated with high energy (15MeV) protons were studied at different temperatures and irradiation doses Φ from 3 x 1012 cm-2 to 1 x 1014 cm-2. Irradiation led to the increase of the base resistance and the appearance of slow relaxation processes at small, V ≤ 0.2 V, and at rather high, V ≥ 2 V, forward voltages. The characteristic times of these relaxation processes ranged from ~1 µs to 10³s. The exponential part of the current-voltage characteristic was only weakly affected by irradiation. The temperature dependence of the base resistance changed expo-nentially with temperature with activation energy Ea ~ 0.6 eV, indicating that the Z1/2 level plays a dominant role in this process. The temperature increase also led to the increase of the ideality factor from 1.05 at 25 °C to 1.1 at 172 °C. At elevated temperatures and high forward voltages V > 2-4 V, the current voltage characteristics tend to be super-linear. It is concluded that at high voltages, the space charge limited current of majority carriers (electrons) and hole injection from the p-n regions play an important role in the formation of the current voltage characteristic. The frequency dependences of noise spectral density S of proton irradiated Schottky diodes have the unusual form of S ~ 1/f05. [ABSTRACT FROM AUTHOR]

Published
2018
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48. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation

Author

null Aref'ev A. A., null Poloskin D. S., null Oganesyan G .A, null Lastovskii S. B., null Kozlovski V. V., null Abrosimov N. V., and null Emtsev V. V.

Abstract

In this paper formation and annealing of boron-related defects in p-type silicon grown by the floating zone technique and subjected to electron and proton irradiation at room temperature are discussed. The defect model suggested earlier has provided fresh insight into the nature of two dominant complexes containing boron in irradiated p-Si, among them boron-divacancy complexes and interstitial boron-substitutional boron pairs. In the present work the same material is irradiated with 6 MeV electron and 8 MeV protons providing additional electrical data to test this model. Additionally new information on boron-related defects in heavily doped p-Si subjected to irradiation with 2.5 MeV electrons at 4.2 K and then subjected to isochronal anneals above room temperature is also discussed. The results obtained on proton irradiated p-Si(FZ) testify that the annealing behavior of boron-divacancy complexes appears to be complicated, in contrast to the behavior of substitutional boron-interstitial boron pairs. The defect model based on the experimental information furnished so far may be used for testing and refining computerized simulations of Non-Ionizing Energy Loss (NIEL) in irradiated silicon. Keywords: silicon, boron impurity, electron- and proton-irradiation, impurity-related complexes.

Published
2022
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