95 results on '"Korotaev, A. G."'
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2. Determination of the Parameters of Multi-Carrier Spectrum in CdHgTe. I. A Review of Mobility Spectrum Analysis Methods
3. Neutronics Models for Integrated Testing of Transport NPP on Land-Based Prototype Testing Facilities
4. Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films
5. Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures
6. Kinetics of epitaxial formation of nanostructures by Frank–van der Merwe, Volmer–Weber and Stranski–Krastanow growth modes
7. Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
8. TEM studies of structural defects in HgTe/HgCdTe quantum wells
9. Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE
10. Discrete mobility-spectrum analysis and its application to transport studies in HgCdTe.
11. Development and Pilot Testing of New Flow Diagrams for Plutonium Purification at the RT-1 Plant
12. Defects in Arsenic Implanted р + –n- and n + –p- Structures Based on MBE Grown CdHgTe Films
13. The Development and Testing of the New Flowsheets for the Plutonium Purification Cycle of the Purex Process
14. Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
15. Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy
16. Properties of arsenic–implanted Hg1-xCdxTe MBE films
17. A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric pressure
18. Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching
19. Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films
20. The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE
21. Specific Features of Determining the Electrophysical Parameters of Variband CMT Structures Grown by Molecular-Beam Epitaxy
22. Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation
23. Electron—Positron annihilation in the narrow-band semiconductor Hg1−xCdxTe
24. TEM studies of structural defects in HgTe/HgCdTe quantum wells
25. Influence of composition of Hg1−x Cd x Te (x = 0.22–0.57) epitaxial film on dynamics of accumulation and spatial distribution of electrically active radiation defects after boron implantation
26. Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
27. Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films
28. Electrical and microscopic characterization of p+-type layers formed in HgCdTe by arsenic implantation.
29. Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study
30. Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films
31. Properties of arsenic–implanted Hg1-xCdxTe MBE films
32. Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study.
33. Effect of a boron implantation on the electrical properties of epitaxial HgCdTe with different material composition
34. Properties of arsenic-implanted Hg1-xCdxTe MBE films.
35. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies.
36. Effect of nitrogen injection of cast iron on ferroalloy assimilation and ingot mold quality
37. The boron implantation in the varied zone MBE MCT epilayer
38. Radiation effects in photoconductive MCT MBE heterostructures
39. Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation
40. Radiation effects in photoconductive MCT MBE heterostructures.
41. Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer
42. Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation.
43. Electron-positron annihilation in the narrow-gap semiconductor Hg 1-x Cd x Te
44. Electron-positron annihilation in the narrow-gap semiconductor Hg1-xCdxTe.
45. Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer.
46. Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation
47. Electron?Positron annihilation in the narrow-band semiconductor Hg1?xCdxTe
48. Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation.
49. Electron—Positron annihilation in the narrow-band semiconductor Hg1−xCdxTe
50. Radiation defect formation at boron implantation in Hg1-xCdxTe epitaxial films with different material composition
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