Search

The rapid development of brain‐inspired computing requires new artificial components and architectures for its hardware implementation. In this regard, memristive devices emerged as potential candidates for artificial synapses because of their ability to emulate the plasticity of the biological synapses. In this work, the synaptic behavior of the TiN/La2NiO4+δ/Pt memristive devices based on thermally annealed La2NiO4+δ films is thoroughly investigated. Using electron energy loss spectroscopy (EELS), it is shown that post‐deposition annealing using inert (Ar) or oxidizing (O2) atmospheres affects the interstitial oxygen content (δ) in the La2NiO4+δ films. Electrical characterization shows that both devices exhibit long‐term potentiation/depression (LTP/LTD) and spike‐timing‐dependent plasticity (STDP). At the same time, the Ar annealed TiN/La2NiO4+δ/Pt device demonstrates filamentary‐like behavior, fast switching, and low energy consumption. On the other hand, the O2 annealed TiN/La2NiO4+δ/Pt devices are forming‐free, exhibiting interfacial‐like resistive switching with slower kinetics. Finally, the simulation tools show that spiking neural network (SNN) architectures with weight updates based on the experimental data achieve high inference accuracy in the digit recognition task, which proves the potential of TiN/La2NiO4+δ/Pt devices for artificial synapse applications. [ABSTRACT FROM AUTHOR]

A cubic pyrochlore with the composition Bi1.865Co1/2Fe1/2Ta2O9+Δ (space group Fd-3m, a = 10.5013(8) Å) was synthesized from oxide precursors using solid-phase reactions. These ceramics are characterized by a porous microstructure formed by randomly oriented grains of an elongated shape with a longitudinal size of 0.5–1 µm. The electronic state of cobalt and iron ions in oxide ceramics was studied by NEXAFS and XPS spectroscopy. The parameters of the XPS spectra of Bi4f, Bi5d, Ta4f, Co2p, and Fe2p ionization thresholds for a complex pyrochlore were compared with the parameters of the corresponding oxides of the transition elements. The energy position of the XPS-Ta4f and -Ta5p spectra is shifted towards lower energies compared to the binding energy in tantalum(V) oxide by 0.75 eV. According to XPS spectroscopy, bismuth and tantalum cations have the corresponding effective charge of +3 and +(5-δ). The NEXAFS-Fe2p spectrum of ceramics coincides with the spectrum of Fe2O3 in its main spectrum characteristics and indicates the content of iron ions in the oxide ceramics in the form of octahedral Fe(III) ions, and according to the character of the Co2p spectrum, cobalt ions are predominantly in the Co(II) state. [ABSTRACT FROM AUTHOR]

Recently, increasing attention of researchers in the field of membrane technology has been paid to the development of membranes based on biopolymers. One of the well-proven polymers for the development of porous membranes is cellulose acetate (CA). This paper is devoted to the study of the influence of different parameters on ultrafiltration CA membrane formation and their transport properties, such as the variation in coagulation bath temperature, membrane shrinkage (post-treatment at 80 °C), introduction to casting CA solution of polymers (polyethylene glycol (PEG), polysulfone (PS), and Pluronic F127 (PL)) and carbon nanoparticles (SWCNTs, MWCNTs, GO, and C60). The structural and physicochemical properties of developed membranes were studied by scanning electron and atomic force microscopies, Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, and contact angle measurements. The transport properties of developed CA-based membranes were evaluated in ultrafiltration of bovine serum albumin (BSA), dextran 110 and PVP K-90. All developed membranes rejected 90% compounds with a molecular weight from ~270,000 g/mol. It was shown that the combination of modifications (addition of PEG, PS, PL, PS-PL, and 0.5 wt% C60) led to an increase in the fluxes and BSA rejection coefficients with slight decrease in the flux recovery ratio. These changes were due to an increased macrovoid number, formation of a more open porous structure and/or thinner top selective, and decreased surface roughness and hydrophobization during C60 modification of blend membranes. Optimal transport properties were found for CA-PEG+C60 (the highest water—394 L/(m2h) and BSA—212 L/(m2h) fluxes) and CA-PS+C60 (maximal rejection coefficient of BSA—59%) membranes. [ABSTRACT FROM AUTHOR]

Nickel oxide is a promising material for transparent electronics applications. This semiconductor demonstrates the possibility of modifying its physical properties depending on the method of growth and subsequent processing. Here the effects of the discharge power are reported during reactive dc magnetron sputtering, as well as the modes of subsequent annealing of NiO films, on their structural, electrical, and optical properties. NiO films are annealed at various temperatures both in an oxygen‐containing environment and under vacuum conditions. Deposited NiO films have a polycrystalline structure with a preferred orientation (200) for the low discharge power mode and (111) for the high discharge power mode. However, obtained NiO films exhibit crystallinity improvement after annealing. The presence of both Ni2+ and Ni3+ oxidation states in the deposited films is found. In addition, it is shown that the relative carrier concentration (Ni3+/Ni2+ peak area ratio) can be controlled by choosing the NiO film preparation mode. The trend in this ratio corresponds to the trend in film conductivity and the number of free‐charge carriers. The deposited films are semitransparent, and the estimated optical bandgap of NiO is in the range from 3.50 to 3.74 eV. [ABSTRACT FROM AUTHOR]

Neuromorphic computing has recently emerged as a potential alternative to the conventional von Neumann computer paradigm, which is inherently limited due to its architectural bottleneck. Thus, new artificial components and architectures for brain-inspired computing hardware implementation are required. Bipolar analog memristive devices, whose resistance (or conductance) can be continuously tuned (as a synaptic weight), are potential candidates for artificial synapse applications. In this work, lanthanum nickelate (La2NiO4+ δ , L2NO4), a mixed ionic electronic conducting oxide, is used in combination with TiN and Pt electrodes. The TiN/L2NO4/Pt devices show bipolar resistive switching with gradual transitions both for the SET and RESET processes. The resistance (conductance) can be gradually modulated by the pulse amplitude and duration, showing good data retention characteristics. A linear relationship between the resistance change and total applied pulse duration is experimentally measured. Moreover, synaptic depression and potentiation characteristics, one of the important functions of bio-synapses, are artificially reproduced for these devices, then modeled and successfully tested in a spiking neural network environment. These results indicate the suitability of using TiN/L2NO4/Pt memristive devices as long-term artificial synapses in neuromorphic computing. [ABSTRACT FROM AUTHOR]

Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films were deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in an Ar/O2 gas mixture. The films are sensitive to ultraviolet radiation with wavelength λ = 254. Structures with interdigital electrode topology have pronounced persistent conductivity. It is shown that the magnitude of responsivity, response time τr, and recovery time τd are determined by the concentration of free holes p involved in recombination processes. For the first time, it is proposed to consider hole trapping both by surface states Nts at the metal/Ga2O3 interface and by traps in the bulk of the film. [ABSTRACT FROM AUTHOR]

The manganese-doped polymorphs of bismuth orthoniobate were studied using thermal analysis, ESR, XPS and NEXAFS spectroscopy. It was shown that the phase transition from the orthorhombic (α) to the triclinic (β) modification can be reversible and it can be achieved by prolonged calcination of samples at 750°C. The DSC curves revealed no thermal effects associated with the phase transformation from the triclinic to the orthorhombic modification near 750°C. In the ESR spectra, the absorption band with g = 3.8 characterized by sextet structure disappeared during the phase transformation from the - to the -form and only the broad component with average intensity was observed at g = 2.2-2.0. According to NEXAFS spectroscopy data, the content of oxidized Mn(III) atoms increased and the content of Mn(II) decreased in the orthorhombic polymorph obtained at 750°C from the tri-clinic modification.

Lead chalcogenide nanoplatelets (NPLs) have emerged as a promising material for devices operating in the near IR and IR spectrum region. Here, we first apply the cation exchange method to PbSe/PbS core/shell NPL synthesis. The shell growth enhances NPL colloidal and environmental stability, and passivates surface trap states, preserving the main core physical properties. To prove the great potential for optoelectrical applications, we fabricate a photoconductor using PbSe/PbS NPLs. The device demonstrates enhanced conductivity and responsivity with fast rise and fall times, resulting in a 13 kHz bandwidth. The carrier transport was investigated with the field effect transistor method, showing p-type conductivity with charge mobility of 1.26 × 10−2 cm2·V−1·s−1. [ABSTRACT FROM AUTHOR]