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To overcome the limitations of the conventional Von Neumann architecture, inspiration from the mammalian brain has led to the development of nanoscale neuromorphic networks. In the present research, molybdenum nanoparticles (NPs), which were produced by means of gas phase condensation based on magnetron sputtering, are shown to be the constituents of electrically percolating networks that exhibit stable, complex, neuron-like spiking behavior at low potentials in the millivolt range, satisfying well the requirement of low energy consumption. Characterization of the NPs using both scanning electron microscopy and scanning transmission electron microscopy revealed not only pristine shape, size, and density control of Mo NPs but also a preliminary proof of the working mechanism behind the spiking behavior due to filament formations. Furthermore, electrostatics COMSOL Multiphysics simulations of the morphology of the NPs provided evidence that the stable switching is due to the as-deposited stellate Mo NPs creating high electric field strengths, while keeping them separated, not seen before in other percolating networks based on spherical NPs. Hence, our results show the working mechanism behind switching in percolating Mo NP networks and show that they are very promising for realistic neuromorphic systems.

Hydrogen is a promising alternative fuel that can push forward the energy transition because of its high energy density (142 MJ kg -1 ), variety of potential sources, low weight and low environmental impact, but its storage for automotive applications remains a formidable challenge. MgH 2 , with its high gravimetric and volumetric density, presents a compelling platform for hydrogen storage; however, its utilization is hindered by the sluggish kinetics of hydrogen uptake/release and high temperature operation. Herein we show that a novel layered heterostructure of reduced graphene oxide and organosilica with high specific surface area and narrow pore size distribution can serve as a scaffold to host MgH 2 nanoparticles with a narrow diameter distribution around ∼2.5 nm and superior hydrogen storage properties to bulk MgH 2 . Desorption studies showed that hydrogen release starts at relatively low temperature, with a maximum at 348 °C and kinetics dependent on particle size. Reversibility tests demonstrated that the dehydrogenation kinetics and re-hydrogenation capacity of the system remains stable at 1.62 wt% over four cycles at 200 °C. Our results prove that MgH 2 confinement in a nanoporous scaffold is an efficient way to constrain the size of the hydride particles, avoid aggregation and improve kinetics for hydrogen release and recharging.

Metal halide perovskites, particularly using tin and lead as bivalent cations, are well known for their synthetic versatility and ion mobility. These materials possess intriguing ionic properties that allow the formation of 2D Ruddlesden-Popper (RP) and 3D metal halide perovskite nanocrystals (NCs) under similar synthetic conditions. We studied the synthesis mechanism of oleylammonium-based Sn and Pb bromide perovskites 2D Ruddlesden-Popper (RP) in comparison with the 3D CsPbBr 3 and CsSnBr 3 NCs. Using experimental techniques in combination with theoretical calculations, we studied the interactions of the long-chain organic cations with the inorganic layers and between each other to assess their stability. Our findings suggest that tin bromide is more inclined toward forming higher-order RP phases or 3D NCs than lead bromide. Furthermore, we demonstrate the synthesis of precisely tuned CsSnBr 3 3D NCs (7 and 10 nm) using standard surface ligands. When the 3D and 2D tin halide perovskite nanostructures coexist in suspension, the obtained drop-cast thin films showed the preferential positioning of residual RP nanostructures at the interface with the substrate. This study encourages further exploration of low-dimensional hybrid materials and emphasizes the need for understanding mechanisms to develop efficient synthetic routes for high-quality tin-halide perovskite NCs., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Lead chalcogenide colloidal quantum dots are one of the most promising materials to revolutionize the field of short-wavelength infrared optoelectronics due to their bandgap tunability and strong absorption. By self-assembling these quantum dots into ordered superlattices, mobilities approaching those of the bulk counterparts can be achieved while still retaining their original optical properties. The recent literature focused mostly on PbSe-based superlattices, but PbS quantum dots have several advantages, including higher stability. In this work, we demonstrate highly ordered 3D superlattices of PbS quantum dots with tunable thickness up to 200 nm and high coherent ordering, both in-plane and along the thickness. We show that we can successfully exchange the ligands throughout the film without compromising the ordering. The superlattices as the active material of an ion gel-gated field-effect transistor achieve electron mobilities up to 220 cm 2 V -1 s -1 . To further improve the device performance, we performed a postdeposition passivation with PbI 2 , which noticeably reduced the subthreshold swing making it reach the Boltzmann limit. We believe this is an important proof of concept showing that it is possible to overcome the problem of high trap densities in quantum dot superlattices enabling their application in optoelectronic devices.

In recent years, phase-change materials have gained importance in nanophotonics and optoelectronics. Sizable optical contrast and added degree of freedom from phase switching drive the use of phase-change materials in various optical devices with outstanding results and potential for real-world applications. The local crystallization/amorphization of phase-change materials and the corresponding reflectance tuning by the crystallized/amorphized region size have potential applications, for example, for future dynamic display devices. Although the resolution is much higher than in current display devices, the pixel sizes in those devices are limited by the locally switchable structure size. Here, the spot sizes are further reduced by using ion beams instead of laser beams, dramatically increasing pixel density, demonstrating superior resolution. In addition, the power to sputter away materials can be utilized in creating nanostructures with relative height differences and local contrast. The experiment focuses on one archetypal phase-change material, Sb 2 Se 3 , prepared by pulsed-laser deposition on a reflective gold substrate. This study demonstrates that structural colors can be produced and reflectance tuning can be achieved by focused ion beam milling/sputtering of phase-change materials at the nanoscale. Furthermore, the local structuring of phase-change materials by focused ion beam can produce high-pixel-density display devices with superior resolutions., (© 2024 The Authors. Advanced Materials published by Wiley‐VCH GmbH.)

Concurrent structural and electronic transformations in VO 2 thin films are of 2-fold importance: enabling fine-tuning of the emergent electrical properties in functional devices, yet creating an intricate interfacial domain structure of transitional phases. Despite the importance of understanding the structure of VO 2 thin films, a detailed real-space atomic structure analysis in which the oxygen atomic columns are also resolved is lacking. Moreover, intermediate atomic structures have remained elusive due to the lack of robust atomically resolved quantitative analysis. Here, we directly resolve both V and O atomic columns and discover the presence of intermediate monoclinic (M2) phase nanolayers (less than 2 nm thick) in epitaxially grown VO 2 films on a TiO 2 (001) substrate, where the dominant part of VO 2 undergoes a transition from the tetragonal (rutile) phase to the monoclinic M1 phase. Strain analysis suggests that the presence of the M2 phase is related to local strain gradients near the TiO 2 /VO 2 interface. We unfold the crucial role of imaging the spatial configurations of the oxygen anions (in addition to V cations) by utilizing atomic-resolution electron microscopy. Our approach can be used to unravel the structural transitions in a wide range of correlated oxides, offering substantial implications for, e.g., optoelectronics and ferroelectrics.

A family of solids including crystalline phase change materials such as GeTe and Sb 2 Te 3 , topological insulators like Bi 2 Se 3, and halide perovskites such as CsPbI 3 possesses an unconventional property portfolio that seems incompatible with ionic, metallic, or covalent bonding. Instead, evidence is found for a bonding mechanism characterized by half-filled p-bands and a competition between electron localization and delocalization. Different bonding concepts have recently been suggested based on quantum chemical bonding descriptors which either define the bonds in these solids as electron-deficient (metavalent) or electron-rich (hypervalent). This disagreement raises concerns about the accuracy of quantum-chemical bonding descriptors is showed. Here independent of the approach chosen, electron-deficient bonds govern the materials mentioned above is showed. A detailed analysis of bonding in electron-rich XeF 2 and electron-deficient GeTe shows that in both cases p-electrons govern bonding, while s-electrons only play a minor role. Yet, the properties of the electron-deficient crystals are very different from molecular crystals of electron-rich XeF 2 or electron-deficient B 2 H 6 . The unique properties of phase change materials and related solids can be attributed to an extended system of half-filled bonds, providing further arguments as to why a distinct nomenclature such as metavalent bonding is adequate and appropriate for these solids., (© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)

The possibility to engineer (GeTe) m (Sb 2 Te 3 ) n phase-change materials to co-host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe) m (Sb 2 Te 3 ) n with GeTe-rich composition is presented. These layered films feature a tunable distribution of (GeTe) m (Sb 2 Te 3 ) 1 blocks of different sizes. Breakthrough evidence of ferroelectric displacement in thick (GeTe) m (Sb 2 Te 3 ) 1 lamellae is provided. The density functional theory calculations suggest the formation of a tilted (GeTe) m slab sandwiched in GeTe-rich blocks. That is, the net ferroelectric polarization is confined almost in-plane, representing an unprecedented case between 2D and bulk ferroelectric materials. The ferroelectric behavior is confirmed by piezoresponse force microscopy and electroresistive measurements. The resilience of the quasi van der Waals character of the films, regardless of their composition, is also demonstrated. Hence, the material developed hereby gathers in a unique 2D platform the phase-change and ferroelectric switching properties, paving the way for the conception of innovative device architectures., (© 2023 The Authors. Advanced Science published by Wiley-VCH GmbH.)

Over the past few decades, telluride-based chalcogenide multilayers, such as PbSeTe/PbTe, Bi 2 Te 3 /Sb 2 Te 3 , and Bi 2 Te 3 /Bi 2 Se 3 , were shown to be promising high-performance thermoelectric films. However, the stability of performance in operating environments, in particular, influenced by intermixing of the sublayers, has been studied rarely. In the present work, the nanostructure, thermal stability, and thermoelectric power factor of Sb 2 Te 3 /Ge 1+ x Te multilayers prepared by pulsed laser deposition are investigated by transmission electron microscopy and Seebeck coefficient/electrical conductivity measurements performed during thermal cycling. Highly textured Sb 2 Te 3 films show p-type semiconducting behavior with superior power factor, while Ge 1+ x Te films exhibit n-type semiconducting behavior. The elemental mappings indicate that the as-deposited multilayers have well-defined layered structures. Upon heating to 210 °C, these layer structures are unstable against intermixing of sublayers; nanostructural changes occur on initial heating, even though the highest temperature is close to the deposition temperature. Furthermore, the diffusion is more extensive at domain boundaries leading to locally inclined structures there. The Sb 2 Te 3 sublayers gradually dissolve into Ge 1+ x Te. This dissolution depends markedly on the relative Ge 1+ x Te film thickness. Rather, full dissolution occurs rapidly at 210 °C when the Ge 1+ x Te sublayer is substantially thicker than that of Sb 2 Te 3 , whereas the dissolution is very limited when the Ge 1+ x Te sublayer is substantially thinner. The resulting variations of the nanostructure influence the Seebeck coefficient and electrical conductivity and thus the power factor in a systematic manner. Our results shed light on a previously unreported correlation of the power factor with the nanostructural evolution of unstable telluride multilayers.

3D superlattices made of colloidal quantum dots are a promising candidate for the next generation of optoelectronic devices as they are expected to exhibit a unique combination of tunable optical properties and coherent electrical transport through minibands. While most of the previous work was performed on 2D arrays, the control over the formation of these systems is lacking, where limited long-range order and energetical disorder have so far hindered the potential of these metamaterials, giving rise to disappointing transport properties. Here, it is reported that nanoscale-level controlled ordering of colloidal quantum dots in 3D and over large areas allows the achievement of outstanding transport properties. The measured electron mobilities are the highest ever reported for a self-assembled solid of fully quantum-confined objects. This ultimately demonstrates that optoelectronic metamaterials with highly tunable optical properties (in this case in the short-wavelength infrared spectral range) and charge mobilities approaching that of bulk semiconductor can be obtained. This finding paves the way toward a new generation of optoelectronic devices., (© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

The current lack of insight into nanoparticle-cell membrane interactions hampers smart design strategies and thereby the development of effective nanodrugs. Quantitative and methodical approaches utilizing cell membrane models offer an opportunity to unravel particle-membrane interactions in a detailed manner under well controlled conditions. Here we use total internal reflection microscopy for real-time studies of the non-specific interactions between nanoparticles and a model cell membrane at 50 ms temporal resolution over a time course of several minutes. Maintaining a simple lipid bilayer system across conditions, adsorption and desorption were quantified as a function of biomolecular corona, particle size and fluid flow. The presence of a biomolecular corona reduced both the particle adsorption rate onto the membrane and the duration of adhesion, compared to pristine particle conditions. Particle size, on the other hand, was only observed to affect the adsorption rate. The introduction of flow reduced the number of adsorption events, but increased the residence time. Lastly, altering the composition of the membrane itself resulted in a decreased number of adsorption events onto negatively charged bilayers compared to neutral bilayers. Overall, a model membrane system offers a facile platform for real-time imaging of individual adsorption-desorption processes, revealing complex adsorption kinetics, governed by particle surface energy, size dependent interaction forces, flow and membrane composition.

The universe abounds with solid helium in polymorphic forms. Therefore, exploring the allotropes of helium remains vital to our understanding of nature. However, it is challenging to produce, observe and utilize solid helium on the earth because high-pressure techniques are required to solidify helium. Here we report the discovery of room-temperature two-dimensional solid helium through the diamond lattice confinement effect. Controllable ion implantation enables the self-assembly of monolayer helium atoms between {100} diamond lattice planes. Using state-of-the-art integrated differential phase contrast microscopy, we decipher the buckled tetragonal arrangement of solid helium monolayers with an anisotropic nature compressed by the robust diamond lattice. These distinctive helium monolayers, in turn, produce substantial compressive strains to the surrounded diamond lattice, resulting in a large-scale bandgap narrowing up to ~2.2 electron volts. This approach opens up new avenues for steerable manipulation of solid helium for achieving intrinsic strain doping with profound applications., (© 2022. The Author(s).)

Lead halide perovskite nanocrystals are highly attractive for next-generation optoelectronics because they are easy to synthesize and offer great compositional and morphological tunability. However, the replacement of lead by tin for sustainability reasons is hampered by the unstable nature of Sn 2+ oxidation state and by an insufficient understanding of the chemical processes involved in the synthesis. Here, an optimized synthetic route is demonstrated to obtain stable, tunable, and monodisperse CsSnI 3 nanocrystals, exhibiting well-defined excitonic peaks. Similar to lead halide perovskites, these nanocrystals are prepared by combining a precursor mixture of SnI 2 , oleylamine, and oleic acid, with a Cs-oleate precursor. Among the products, nanocrystals with 10 nm lateral size in the γ-orthorhombic phase prove to be the most stable. To achieve such stability, an excess of precursor SnI 2 as well as substoichiometric Sn:ligand ratios are key. Structural, compositional, and optical investigations complemented by first-principle density functional theory calculations confirm that nanocrystal nucleation and growth follow the formation of (R-NH 3 + ) 2 SnI 4 nanosheets, with R = C 18 H 35 . Under specific synthetic conditions, stable mixtures of 3D nanocrystals CsSnI 3 and 2D nanosheets (Ruddlesden-Popper (R-NH 3 + ) 2 Cs n -1 Sn n I 3 n +1 with n > 1) are obtained. These results set a path to exploiting the high potential of Sn halide perovskite nanocrystals for opto-electronic applications., (© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.)

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb 2 Te 3 tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. This search is relatively crucial for embedded memory applications where the crystallization temperature of the active material has to be higher to surpass the soldering threshold. Increasing the Ge content in the GST alloys seems promising due to the associated higher crystallization temperatures. However, homogeneous Ge-rich GST in the as-deposited condition is thermodynamically unstable, and phase separation upon annealing is unavoidable. This phase separation reduces endurance and is detrimental in fully integrating the alloys into active memory devices. This work investigated the phase separation of Ge-rich GST alloys, specifically Ge 5 Sb 2 Te 3 or GST523, into multiple (meta)stable phases at different length scales in melt-quenched bulk and annealed thin film. Electron microscopy-based techniques were used in our work for chemical mapping and elemental composition analysis to show the formation of multiple phases. Our results show the formation of alloys such as GST213 and GST324 in all length scales. Furthermore, the alloy compositions and the observed phase separation pathways agree to a large extent with theoretical results from density functional theory calculations.

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, the combination of the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires is investigated and potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires are explored. The electronic structure of the InSb-CdTe interface using density functional theory is determined and a type-I band alignment is extracted with a small conduction band offset ( ⩽0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of structural quality, it is demonstrated that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility measured for both uncapped and CdTe-capped nanowires., (© 2022 The Authors. Advanced Science published by Wiley-VCH GmbH.)

Phase change materials, with more than one reflectance and resistance states, have been a subject of interest in the fields of phase change memories and nanophotonics. Although most current research focuses on rather complex phase change alloys, e.g. , Ge2Sb2Te5, recently, monatomic antimony thin films have aroused a lot of interest. One prominent attractive feature is its simplicity, giving fewer reliability issues like segregation and phase separation. However, phase transformation and crystallization properties of ultrathin Sb thin films must be understood to fully incorporate them into future memory and nanophotonics devices. Here, we studied the thickness-dependent crystallization behavior of pulsed laser-deposited ultrathin Sb thin films by employing dynamic ellipsometry. We show that the crystallization temperature and phase transformation speed of as-deposited amorphous Sb thin films are thickness-dependent and can be precisely tuned by controlling the film thickness. Thus, crystallization temperature tuning by thickness can be applied to future memory and nanophotonic devices. As a proof of principle, we designed a heterostructure device with three Sb layers of varying thicknesses with distinct crystallization temperatures. Measurements and simulation results show that it is possible to address these layers individually and produce distinct and multiple reflectance profiles in a single device. In addition, we show that the immiscible nature of Sb and GaSb could open up possible heterostructure device designs with high stability after melt-quench and increased crystallization temperature. Our results demonstrate that the thickness-dependent phase transformation and crystallization dynamics of ultrathin Sb thin films have attractive features for future memory and nanophotonic devices.

Scanning transmission electron microscopy (STEM) is the most widespread adopted tool for atomic scale characterization of two-dimensional (2D) materials. However, damage free imaging of 2D materials with electrons has remained problematic even with powerful low-voltage 60 kV-microscopes. An additional challenge is the observation of light elements in combination with heavy elements, particularly when recording fast dynamical phenomena. Here, we demonstrate that 2D WS 2 suffers from electron radiation damage during 30 kV-STEM imaging, and we capture beam-induced defect dynamics in real-time by atomic electrostatic potential imaging using integrated differential phase contrast (iDPC)-STEM. The fast imaging of atomic electrostatic potentials with iDPC-STEM reveals the presence and motion of single sulfur atoms near defects and edges in WS 2 that are otherwise invisible at the same imaging dose at 30 kV with conventional annular dark-field STEM, and has a vast speed and data processing advantage over electron detector camera based STEM techniques like electron ptychography.

The wetting state of surfaces can be rendered to a highly hydrophobic state by the deposition of hydrophilic gas phase synthesized Ag nanoparticles (NPs). The aging of Ag NPs leads to an increase in their size, which is also associated with the presence of Ag adatoms on the surface between the NPs that have a strong effect on the wetting processes. Furthermore, surface airborne hydrocarbons were removed by UV-ozone treatment, providing deeper insight into the apparent mobility of the NPs on different surfaces and their subsequent ripening and aging. In addition, the UV-ozone treatment revealed the presence of adatoms during the magnetron sputtering process. This surface treatment lowers the initial contact angle of the substrates and facilitates the mobility of Ag NPs and adatoms on the surface of substrates. Adatoms co-deposited on clean high surface energy substrates will nucleate on Ag NPs that will remain closely spherical and preserve the pinning effect due to the water nanomeniscus. If the adatoms are co-deposited on a UV-ozone cleaned low surface energy substrate, their mobility is restricted, and they will nucleate in two-dimensional islands and/or nanoclusters on the surface instead of connecting to existing Ag NPs. This growth results in a rough surface without overhangs, where the wetting state is reversed from hydrophobic to hydrophilic. Finally, different material surfaces of transmission electron microscopy grids revealed strong differences in the sticking coefficient for the Ag NPs, suggesting another factor that can strongly affect their wetting properties.

Objectives: The liquid-solid interactions have attracted broad interest since solid surfaces can either repel or attract fluids, configuring a wide spectrum of wetting states (from superhydrophilicity to superhydrophobicity). Since the blood-artificial surface interaction of bileaflet mechanical heart valves essentially represents a liquid-solid interaction, we analysed the thrombogenicity of mechanical heart valve prostheses from innovative perspectives. The aim of the present study was to modify the surface wettability of standard St. Jude Medical Regent™ occluders., Methods: Four pyrolytic carbon occluders were irradiated by means of ultra-short pulse laser, to create 4 different nanotextures (A-D), the essential prerequisite to achieve superhydrophobicity. The static surface wettability of the occluders was qualified by the contact angle (θ) of 2 µl of purified water, using the sessile drop technique. The angle formed between the liquid-solid and the liquid-vapour interface was the contact angle and was obtained by analysing the droplet images captured by a camera. The morphology of the occluders was characterized and analysed by a scanning electron microscope at different magnifications., Results: The scanning electron microscope analysis of the textures revealed 2 different configurations of the pillars since A and B showed well-rounded shaped tops and C and D flat tops. The measured highest contact angles were comprised between 108.1° and 112.7°, reflecting an improved hydrophobicity of the occluders. All the textures exhibited, to different extents, an orientation (horizontal or vertical), which was strictly related to the observed anisotropy., Conclusions: In this very early phase of our research, we were able to demonstrate that the intrinsic wettability of pyrolytic carbon occluders can be permanently modified, increasing the water repellency., (© The Author(s) 2021. Published by Oxford University Press on behalf of the European Association for Cardio-Thoracic Surgery. All rights reserved.)

Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However, recent work on heterostructures based on Bi 2 Te 3 , Sb 2 Te 3 , and GeTe showed the potential of a different type of strain engineering due to long-range mutual straining. Still, a comprehensive understanding of the strain relaxation mechanism in these telluride heterostructures is lacking due to limitations of the earlier analyses performed. Here, we present a detailed study of strain in two-dimensional (2D/2D) and mixed dimensional (2D/3D) systems derived from mica/Bi 2 Te 3 , Sb 2 Te 3 /Bi 2 Te 3 , and Bi 2 Te 3 /GeTe heterostructures, respectively. We first clearly show the fast relaxation process in the mica/Bi 2 Te 3 system where the strain was generally transferred and confined up to the second or third van der Waals block and then abruptly relaxed. Then we show, using three independent techniques, that the long-range exponentially decaying strain in GeTe and Sb 2 Te 3 grown on the relaxed Bi 2 Te 3 and Bi 2 Te 3 on relaxed Sb 2 Te 3 as directly observed at the growth surface is still present within these three different top layers a long time after growth. The observed behavior points at immediate strain relaxation by plastic deformation without any later relaxation and rules out an elastic (energy minimization) model as was proposed recently. Our work advances the understanding of strain tuning in textured heterostructures or superlattices governed by anisotropic bonding.

The recent development of phase transfer ligand exchange methods for PbS quantum dots (QD) has enhanced the performance of quantum dots solar cells and greatly simplified the complexity of film deposition. However, the dispersions of PbS QDs (inks) used for film fabrication often suffer from colloidal instability, which hinders large-scale solar cell production. In addition, the wasteful spin-coating method is still the main technique for the deposition of QD layer in solar cells. Here, we report a strategy for scalable solar cell fabrication from highly stable PbS QD inks. By dispersing PbS QDs capped with CH 3 NH 3 PbI 3 in 2,6-difluoropyridine (DFP), we obtained inks that are colloidally stable for more than 3 months. Furthermore, we demonstrated that DFP yields stable dispersions even of large diameter PbS QDs, which are of great practical relevance owing to the extended coverage of the near-infrared region. The optimization of blade-coating deposition of DFP-based inks enabled the fabrication of PbS QD solar cells with power conversion efficiencies of up to 8.7%. It is important to underline that this performance is commensurate with the devices made by spin coating of inks with the same ligands. A good shelf life-time of these inks manifests itself in the comparatively high photovoltaic efficiency of 5.8% obtained with inks stored for more than 120 days.

Germanane (GeH), a germanium analogue of graphane, has recently attracted considerable interest because its remarkable combination of properties makes it an extremely suitable candidate to be used as 2D material for field effect devices, photovoltaics, and photocatalysis. Up to now, the synthesis of GeH has been conducted by substituting Ca by H in a β-CaGe 2 layered Zintl phase through topochemical deintercalation in aqueous HCl. This reaction is generally slow and takes place over 6 to 14 days. The new and facile protocol presented here allows to synthesize GeH at room temperature in a significantly shorter time (a few minutes), which renders this method highly attractive for technological applications. The GeH produced with this method is highly pure and has a band gap (E g ) close to 1.4 eV, a lower value than that reported for germanane synthesized using HCl, which is promising for incorporation of GeH in solar cells., (© 2020 The Authors. Published by Wiley-VCH GmbH.)

A unified picture of different application areas for incipient metals is presented. This unconventional material class includes several main-group chalcogenides, such as GeTe, PbTe, Sb 2 Te 3 , Bi 2 Se 3 , AgSbTe 2 and Ge 2 Sb 2 Te 5 . These compounds and related materials show a unique portfolio of physical properties. A novel map is discussed, which helps to explain these properties and separates the different fundamental bonding mechanisms (e.g., ionic, metallic, and covalent). The map also provides evidence for an unconventional, new bonding mechanism, coined metavalent bonding (MVB). Incipient metals, employing this bonding mechanism, also show a special bond breaking mechanism. MVB differs considerably from resonant bonding encountered in benzene or graphite. The concept of MVB is employed to explain the unique properties of materials utilizing it. Then, the link is made from fundamental insights to application-relevant properties, crucial for the use of these materials as thermoelectrics, phase change materials, topological insulators or as active photonic components. The close relationship of the materials' properties and their application potential provides optimization schemes for different applications. Finally, evidence will be presented that for metavalently bonded materials interesting effects arise in reduced dimensions. In particular, the consequences for the crystallization kinetics of thin films and nanoparticles will be discussed in detail., (© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Hydrogen as a fuel can be stored safely with high volumetric density in metals. It can, however, also be detrimental to metals, causing embrittlement. Understanding fundamental behavior of hydrogen at the atomic scale is key to improve the properties of metal-metal hydride systems. However, currently, there is no robust technique capable of visualizing hydrogen atoms. Here, we demonstrate that hydrogen atoms can be imaged unprecedentedly with integrated differential phase contrast, a recently developed technique performed in a scanning transmission electron microscope. Images of the titanium-titanium monohydride interface reveal stability of the hydride phase, originating from the interplay between compressive stress and interfacial coherence. We also uncovered, 30 years after three models were proposed, which one describes the position of hydrogen atoms with respect to the interface. Our work enables previously unidentified research on hydrides and is extendable to all materials containing light and heavy elements, including oxides, nitrides, carbides, and borides., (Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).)

We present here a detailed study of the wettability of surfaces nanostructured with amorphous and crystalline nanoparticles (NPs) derived from the phase-change material Ge 2 Sb 2 Te 5 (GST). Particular attention was devoted to the effect of airborne surface hydrocarbons on surface wetting. Our analysis illustrates that a reversible hydrophilic-hydrophobic wettability switch is revealed by combined ultraviolet-ozone (UV-O 3 ) treatments and exposure to hydrocarbon atmospheres. Indeed, the as-prepared surfaces exhibited a hydrophilic state after thermal annealing or UV-O 3 treatment which can partially remove hydrocarbon contaminants, while a hydrophobic state was realized after exposure to hydrocarbon atmosphere. Using high-angle annular dark-field scanning transmission electron microscopy for the specially designed GST NP decorated graphene substrates, a network of hydrocarbon connecting GST NPs was observed. Our findings indicate that airborne hydrocarbons can significantly enhance the hydrophobicity of nanostructured surfaces. Finally, the experiments reveal that previously defined hydrophilic materials can be used for the design of hydrophobic surfaces even if the meniscus is highly adhered to a solid surface, which is in agreement with our qualitative model involving the contribution of the nanomeniscus formed between the substrate and a decorating NP.

Over the past decades, the development of nano-scale electronic devices and high-density memory storage media has raised the demand for low-cost fabrication methods of two-dimensional (2D) arrays of magnetic nanostructures. Here, we present a chemical solution deposition methodology to produce 2D arrays of cobalt ferrite (CFO) nanodots on Si substrates. Using thin films of four different self-assembled block copolymers as templates, ordered arrays of nanodots with four different characteristic dimensions were fabricated. The dot sizes and their long-range arrangement were studied with scanning electron microscopy (SEM) and grazing incident small-angle X-ray scattering (GISAXS). The structural evolution during UV/ozone treatment and the following thermal annealing was investigated through monitoring the atomic arrangement with X-ray absorption fine structure spectroscopy (EXAFS) and checking the morphology at each preparation step. The preparation method presented here obtains array types that exhibit thicknesses less than 10 nm and blocking temperatures above room temperature (e.g., 312 K for 20 nm diameter dots). Control over the average dot size allows observing an increase of the blocking temperature with increasing dot diameter. The nanodots present promising properties for room temperature data storage, especially if a better control over their size distribution will be achieved in the future.

Magnesium thin films covered with a layer of Pd absorb hydrogen at much higher pressures than bulk Mg. Such an effect was originally explained as a consequence of elastic clamping on Mg by the capping Pd layer. An alternative interpretation later suggested that the pressure increase could originate from simple alloying between Mg and Pd. Here we resolve this controversy by measuring the hydrogenation and dehydrogenation isotherms of Mg-Pd thin film alloys over a wide range of compositions. Our results disentangle the effects of elastic clamping and alloying and highlight the role of plastic deformations.

The alloy (GeTe) 85 (AgSbTe 2 ) 15 , commonly known as TAGS-85, is one of the best performing p-type thermoelectric materials in the temperature range 200-500 °C. In all reports thus far, TAGS-85 adopts a rhombohedral crystal structure at room temperature and undergoes a reversible transition to a cubic phase in the middle of the operating temperature range. Here, we report on a novel, metrically cubic polymorph of TAGS-85 that can be obtained at room temperature using a particular cooling protocol during initial synthesis. This polymorph transforms irreversibly on initial heating to a 21-layer trigonal structure containing ordered cation vacancy layers, driven by the spontaneous precipitation of argyrodite-type Ag 8 GeTe 6 . We show that the precipitation of Ag 8 GeTe 6 is detrimental to the thermoelectric performance of TAGS-85 due to an increase in the vacancy concentration, which makes the samples more metallic in character and significantly reduces the Seebeck coefficient. The precipitation of Ag 8 GeTe 6 can be suppressed by careful control of the synthesis conditions., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)

Phase-change Ge 2 Sb 2 Te 5 nanoparticles (NPs), that are promising for next-generation phase-change memory and other emerging optoelectronic applications, have been deposited on graphene support layers and analyzed using advanced transmission electron microscopy techniques allowing high quality atomic resolution imaging at accelerating voltages as low as 40 kV. The deposition results in about three times higher NP coverage on suspended graphene than on graphene containing an amorphous background support. We attribute this to the variation in surface energy of suspended and supported graphene, indicating that the former harvests NPs more effectively. Hydrocarbon contamination on the graphene profoundly enhances the mobility of the NP atoms and after prolonged (weeks) exposure to air resulted in more severe oxidation and spreading of NPs on the suspended graphene than on supported graphene because the network of hydrocarbons develops more extensively on the suspended rather than on the supported graphene. Due to this oxidation, GeO x shells are formed out of NPs having a uniform composition initially. The present work provides new insights into the structure and stability of phase-change NPs, graphene and their combinations.

Hafnia-based thin films are a favoured candidate for the integration of robust ferroelectricity at the nanoscale into next-generation memory and logic devices. This is because their ferroelectric polarization becomes more robust as the size is reduced, exposing a type of ferroelectricity whose mechanism still remains to be understood. Thin films with increased crystal quality are therefore needed. We report the epitaxial growth of Hf 0.5 Zr 0.5 O 2 thin films on (001)-oriented La 0.7 Sr 0.3 MnO 3 /SrTiO 3 substrates. The films, which are under epitaxial compressive strain and predominantly (111)-oriented, display large ferroelectric polarization values up to 34 μC cm -2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This finding, in conjunction with density functional theory calculations, allows us to propose a compelling model for the formation of the ferroelectric phase. In addition, these results point towards thin films of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

Here we demonstrate that the 0-dimensional confinement of Ge2Sb2Te5 results in a drastic reduction of the minimum critical fluence required for optical-induced amorphization when compared to the thin-film cases. We show that by using single-shot laser pulses, the investigated nanoparticles display a crystalline-to-amorphous transition, satisfying a mandatory requirement of a bit-memory element. These unprecedented results open a viable route to boost energy efficient phase-change processes.

Colloidal quantum dots (CQDs) are nanoscale building blocks for bottom-up fabrication of semiconducting solids with tailorable properties beyond the possibilities of bulk materials. Achieving ordered, macroscopic crystal-like assemblies has been in the focus of researchers for years, since it would allow exploitation of the quantum-confinement-based electronic properties with tunable dimensionality. Lead-chalcogenide CQDs show especially strong tendencies to self-organize into 2D superlattices with micrometer-scale order, making the array fabrication fairly simple. However, most studies concentrate on the fundamentals of the assembly process, and none have investigated the electronic properties and their dependence on the nanoscale structure induced by different ligands. Here, it is discussed how different chemical treatments on the initial superlattices affect the nanostructure, the optical, and the electronic-transport properties. Transistors with average two-terminal electron mobilities of 13 cm 2 V -1 s -1 and contactless mobility of 24 cm 2 V -1 s -1 are obtained for small-area superlattice field-effect transistors. Such mobility values are the highest reported for CQD devices wherein the quantum confinement is substantially present and are comparable to those reported for heavy sintering. The considerable mobility with the simultaneous preservation of the optical bandgap displays the vast potential of colloidal QD superlattices for optoelectronic applications., (© 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

Reversible amorphous-crystalline phase transitions are studied using complementary ultrafast differential scanning calorimetry and transmission electron microscopy techniques, which together allow a wealth of thermal and structural properties to be determined. The SeTe(As) system is investigated because these chalcogenide based materials have favorable properties as a phase-change memory material and in optical systems. Using calorimetry, we find that the addition of 10 at. % As to SeTe alloys strongly increases their glass forming ability, increasing both glass transition and crystallization temperatures while reducing critical quench rate. Ex situ investigation of Se x Te 90- x As 10 using electron microscopy and elemental mapping reveals a two-phase lamellar segregation mechanism, where a trigonal SeTe-phase and an amorphous As-rich phase are formed. These findings demonstrate the power of combining thermal and structural analysis techniques., Competing Interests: The authors declare no competing financial interest.

Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.

Chalcogenide-based phase change materials (PCMs) are promising candidates for the active element in novel electrical nonvolatile memories and have been applied successfully in rewritable optical disks. Nanostructured PCMs are considered as the next generation building blocks for their low power consumption, high storage density, and fast switching speed. Yet their crystallization kinetics at high temperature, the rate-limiting property upon switching, faces great challenges due to the short time and length scales involved. Here we present a facile method to synthesize highly controlled, ligand-free GeTe nanoparticles, an important PCM, with an average diameter under 10 nm. Subsequent crystallization by slow and ultrafast rates allows unravelling of the crystallization kinetics, demonstrating the breakdown of Arrhenius behavior for the crystallization rate and a fragile-to-strong transition in the viscosity as well as the overall crystal growth rate for the as-deposited GeTe nanoparticles. The obtained results pave the way for further development of phase-change memory based on GeTe with sub-lithographic sizes., Competing Interests: The authors declare no competing financial interest.

In this work we report the influence of methane/hydrogen on the nucleation and formation of MgTi bimetallic nanoparticles (NPs) prepared by gas phase synthesis. We show that a diverse variety of structural motifs can be obtained from MgTi alloy, TiC x /Mg/MgO, TiC x /MgO and TiH x /MgO core/shell NPs via synthesis using CH 4 /H 2 as a trace gas, and with good control of the final NP morphology and size distribution. Moreover, depending on the concentration of Ti and type of employed trace gas, the as prepared MgTi NPs can be tuned from truncated hexagonal pyramid to triangular and hexagonal platelet shapes. The shape of MgTi NPs is identified using detailed analysis from selected area electron diffraction (SAED) patterns and tomography (3D reconstruction based on a tilt series of Bright-Field transmission electron microscopy (TEM) micrographs). We observe the truncated hexagonal pyramid as a shape of MgTi alloy NPs in contrast to Mg NPs that show a hexagonal prismatic shape. Moreover, based on our experimental observations and generic geometrical model analysis, we also prove that the formation of the various structural motifs is based on a sequential growth mechanism instead of phase separation. One of the prime reasons for such mechanism is based on the inadequacy of Mg to nucleate without template in the synthesis condition. In addition, the shape of the TiC x /TiH x core, and the concentration of Mg have strong influence on the shape evolution of TiC x /MgO and TiH x /MgO NPs compared to TiC x /Mg/MgO NPs, where the thermodynamics and growth rates of the Mg crystal planes dominate the final shape. Finally, it is demonstrated that the core shape of TiC x and TiH x is affected by the Mg/Ti target ratio (affecting the composition in the plasma), and the type of the trace gas employed. In the case of CH 4 the TiC x core forms a triangular platelet, while in the case of H 2 the TiH x core transforms into a hexagonal platelet. We elucidate the reason for the TiC x /TiH x core shape based on the presence of (i) defects, and (ii) hydrogen and carbon adsorption on {111} planes that alter the growth rates and surface facet stabilization.

Modifying the strain state of solids allows control over a plethora of functional properties. The weak interlayer bonding in van der Waals (vdWaals) materials such as graphene, hBN, MoS 2 , and Bi 2 Te 3 might seem to exclude strain engineering, since strain would immediately relax at the vdWaals interfaces. Here we present direct observations of the contrary by showing growth of vdWaals heterostructures with persistent in-plane strains up to 5% and we show that strain relaxation follows a not yet reported process distinctly different from strain relaxation in three-dimensionally bonded (3D) materials. For this, 2D bonded Bi 2 Te 3 -Sb 2 Te 3 and 2D/3D bonded Bi 2 Te 3 -GeTe multilayered films are grown using Pulsed Laser Deposition (PLD) and their structure is monitored in situ using Reflective High Energy Electron Diffraction (RHEED) and post situ analysis is performed using Transmission Electron Microscopy (TEM). Strain relaxation is modeled and found to solely depend on the layer being grown and its initial strain. This insight demonstrates that strain engineering of 2D bonded heterostructures obeys different rules than hold for epitaxial 3D materials and opens the door to precise tuning of the strain state of the individual layers to optimize functional performance of vdWaals heterostructures.

The alloys (GeTe) x (AgSbTe 2 ) 100-x , commonly known as TAGS-x, are among the best performing p-type thermoelectric materials for the composition range 80 ≤ x ≤ 90 and in the temperature range 200-500 °C. They adopt a rhombohedrally distorted rocksalt structure at room temperature and are reported to undergo a reversible phase transition to a cubic structure at ∼250 °C. However, we show that, for the optimal x = 85 composition (TAGS-85), both the structural and thermoelectric properties are highly sensitive to the initial synthesis method employed. Single-phase rhombohedral samples exhibit the best thermoelectric properties but can only be obtained after an annealing step at 600 °C during initial cooling from the melt. Under faster cooling conditions, the samples obtained are inhomogeneous, containing multiple rhombohedral phases with a range of lattice parameters and exhibiting inferior thermoelectric properties. We also find that when the room-temperature rhombohedral phase is heated, an intermediate trigonal structure containing ordered cation vacancy layers is formed at ∼200 °C, driven by the spontaneous precipitation of argyrodite-type Ag 8 GeTe 6 which alters the stoichiometry of the TAGS-85 matrix. The rhombohedral and trigonal phases of TAGS-85 coexist up to 380 °C, above which a single cubic phase is obtained and the Ag 8 GeTe 6 precipitates redissolve into the matrix. On subsequent cooling a mixture of rhombohedral, trigonal, and Ag 8 GeTe 6 phases is again obtained. Initially single-phase samples exhibit thermoelectric power factors of up to 0.0035 W m -1 K -2 at 500 °C, a value that is maintained on subsequent thermal cycling and which represents the highest power factor yet reported for undoped TAGS-85. Therefore, control over the structural homogeneity of TAGS-85 as demonstrated here is essential in order to optimize the thermoelectric performance.

Phase-change materials based on GeSbTe show unique switchable optoelectronic properties and are an important contender for next-generation non-volatile memories. Moreover, they recently received considerable scientific interest, because it is found that a vacancy ordering process is responsible for both an electronic metal-insulator transition and a structural cubic-to-trigonal transition. GeTe-Sb 2 Te 3 based superlattices, or specifically their interfaces, provide an interesting platform for the study of GeSbTe alloys. In this work such superlattices have been grown with molecular beam epitaxy and they have been characterized extensively with transmission electron microscopy and X-ray diffraction. It is shown that the van der Waals gaps in these superlattices, which result from vacancy ordering, are mobile and reconfigure through the film using bi-layer defects and Ge diffusion upon annealing. Moreover, it is shown that for an average composition that is close to GeSb 2 Te 4 a large portion of 9-layered van der Waals systems is formed, suggesting that still a substantial amount of random vacancies must be present within the trigonal GeSbTe layers. Overall these results illuminate the structural organization of van der Waals gaps commonly encountered in GeSbTe alloys, which are intimately related to their electronic properties and the metal-insulator transition.