35 results on '"Koo, June-Mo"'
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2. A 0.6 ㎛ Small Pixel for High Resolution CMOS Image Sensor with Full Well Capacity of 10,000e- by Dual Vertical Transfer Gate Technology
3. Design of safety-critical systems using the complementarities of success and failure domains with a case study
4. Influence of purge gas on the characteristics of lead–zirconium–titanate thin films prepared by metalorganic chemical vapor deposition
5. Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O 3 films
6. Thin Ferroelectric Film between Double Schottky Barriers
7. Effects of recovery annealing on reliability of SrBi2Ta2O9 based ferroelectric memory devices
8. Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures
9. Frequency-domain elastic full waveform inversion for VTI media
10. Analysis of a Structure of the Kunsan Basin in Yellow Sea Using Gravity and Magnetic Data
11. Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O3 films
12. Fabrication of 3-Dimensional PbZr1−x TixO3 Nanoscale Thin Film Capacitors for High Density Ferroelectric Random Access Memory Devices
13. METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF PbZrxTi1 –xO3 THIN FILMS ON Ir–Ru ALLOY ELECTRODES
14. CHARACTERIZATION OF NOVEL ELECTRODE FOR HIGH-DENSITY Pb(Zr, Ti)O3 CAPACITOR APPLICATION
15. The Investigation of Ferroelectric Domain Behavior Affected by Thin Metallic Electrode
16. Formation of Stoichiometric SrRuO[sub 3] Electrodes for PZT Capacitors by Pulsed-MOCVD
17. Novel Ir–Ti Alloy Electrodes for High-Density Ferroelectric Memory Applications
18. Effects of Pre-Deposition Gas Treatments for Pb(Zr,Ti)O3 Films on Ir Electrode Grown by MOCVD
19. Effect of Ultra Thin Bottom Electrode on the Ferroelectric Properties of Pb(Zr,Ti)O3 Films Grown by Metal-Organic Chemical Vapor Deposition
20. Comparison of Retention Characteristics of Pb(Zr,Ti)O3 (PZT) Capacitors Fabricated with Noble Metal Electrodes and Their Oxide Electrodes
21. Enhancement of Ferroelectric Properties of Pb(Zr,Ti)O3 Films Grown by Metal-Organic Chemical Vapor Deposition on Noble-Alloy Bottom Electrodes
22. Preparation of Pb(ZrxTi1 - x)O3 Films on Trench Structure for High-Density Ferroelectric Random Access Memory
23. Trap Charge Density at Interfaces of MOCVD Pt(Ir)/PZT/Ir(Ti/SiO2/Si) Structures.
24. Influences of hydrogen damages in ferroelectric thin film capacitors
25. Nitridation of Si surface using ICP (inductively coupled plasma) system for MeFIS-FET applications
26. Effects of Ti/Ir top electrodes of PZT capacitors on the hydrogen related degradation
27. Investigation on various insulator layers for MFIS capacitors
28. Degradation of Ferroelectric Capacitors During Forming Gas Annealing
29. Effects of recovery annealing on reliability of SrBi2Ta2O9 based ferroelectric memory devices.
30. Effects of recovery annealing on reliability of SrBi2Ta2O9based ferroelectric memory devices
31. Estimation of soot oxidation rate in DPF under carbon and non-carbon based particulate matter accumulated condition
32. Work and speed based engine operation condition analysis for new European driving cycle (NEDC)
33. Formation of Stoichiometric SrRuO3Electrodes for PZT Capacitors by Pulsed-MOCVD
34. Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O3 films
35. Fabrication of 3-dimensional PbZr(1-x)Ti(x)O3 nanoscale thin film capacitors for high density ferroelectric random access memory devices.
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