1. n- Zn O/i- In Ga N/p- Ga N heterostructure for solar cell application.
- Author
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Nam, Seung‐Yong, Choi, Yong‐Seok, Song, Young‐Ho, Jung, Myoung‐Ho, Kang, Chang Mo, Kong, Duk‐Jo, Park, Seong‐Ju, Lee, Jeong‐Yong, Namkoong, Gon, and Lee, Dong‐Seon
- Subjects
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SOLAR cells , *ZINC oxide , *HETEROSTRUCTURES , *PLASMA etching , *NITRIDES - Abstract
We report hybrid n-ZnO/i-InGaN/p-GaN solar cells in which the n-GaN layer of n-GaN/i-InGaN/p-GaN solar cell was replaced with n-type ZnO. In this study, inverted structures were used for hybrid ZnO/nitride solar cells where p-type GaN was first grown on sapphire substrate, followed by i-InGaN and n-ZnO layers. The as-fabricated device showed high series resistance and low energy conversion efficiency due to the formation of damaged p-GaN region during dry etching. On the other hand, formation of microrods on the p-GaN eased the removal of the damaged p-GaN resulting in significantly lowered series resistance and enhanced energy conversion efficiency. (a) n-ZnO/i-InGaN/p-GaN solar cell structure without microrods, (b) n-ZnO/i-InGaN/p-GaN solar cell structure with microrods, and (c) magnified image of the dashed box on (b). [ABSTRACT FROM AUTHOR]
- Published
- 2013
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