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The commonly used hole transport layer (HTL) Poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) still has some shortcomings that will limit the development of Pb–Sn perovskite solar cells (PSCs). In this work, multifunctional ammonium sulfide (AS) is attempted to modify PEDOT:PSS/perovskite interface. AS has multiple effects on different functional layers and the device as a whole: a) optimize the perovskite crystallization by the formation of PbS nucleation sites; b) neutralize the acidity of PEDOT:PSS by reaction with PSS; c) promote carrier transport at HTL/perovskite interface by tuning the energy level of PEDOT:PSS. As a result, a power conversion efficiency of 24.23% is obtained in the reverse scanning direction and 23.84% in the steady‐state output power test for the single‐junction Pb–Sn PSCs, and 27.48% for all‐perovskite tandem solar cells. These results show that AS modification can be an effective way to boost the development of Pb–Sn PSCs. [ABSTRACT FROM AUTHOR]

Pure FAPbI3‐based, with FA being formamidinium, perovskite solar cells (PSCs) have garnered worldwide recognition for their exceptional efficiency. However, the phase stability of FAPbI3 is still a big obstacle in this area, because the ordinary strategy using MA+, Br−, Cs+ to stabilize α‐FAPbI3 phase can cause the bandgap change and ion migration. Herein, a new strategy is introduced to improve the α‐FAPbI3 phase stability by using a self‐assembled bridging layer at the buried interface of FAPbI3 perovskite in the n–i–p solar cell structure. A series of multidentate bisphosphonic acid molecules are screened and demonstrate that etidronic acid (EA) with the smallest steric hindrance behaves the best. The four P‐OH groups can first form multidentate anchors on SnO2 while the remaining unanchored ─OH and P═O groups can form strong interaction between I− and Pb2+. Thus, a strong and stable bridging layer is formed, which greatly increases the energy barrier of phase transition of FAPbI3. As a result, the pure FAPbI3‐based (MA+, Br+, Cs+‐free system) n–i–p device reached an impressive power conversion efficiency of 24.2% with good stability. Furthermore, the strong interaction between EA and Pb2+ can greatly reduce lead leakage in harsh conditions. [ABSTRACT FROM AUTHOR]

Although perovskite solar cells have achieved great breakthroughs in photoelectric conversion efficiency (PCE), some challenges still need to be addressed before commercialization. Lead leakage is harmful to the environment and many methods are developed to prevent lead leakage; among them, chemical adsorption has proved to be an effective way. Herein, a simple and low‐cost strategy that can enhance the device performance and mitigate the lead leakage by applying l‐phenylalanine in the interface of NiOx/perovskite is reported. The results show that this strategy can improve the morphology and conductivity of the NiOx film, optimize the NiOx/perovskite interface energy level, resulting in an efficient and stable device with a PCE of 19.0%. Furthermore, the interface modification improves the stability of the perovskite film through strong interaction with the perovskite, inhibits the decomposition of the film in water, slows down the process of lead leakage, and protects the environment from lead pollution. The devices maintain 86% initial efficiency for 200 h maximum power point measurement and 94% for 2100 h under nitrogen. [ABSTRACT FROM AUTHOR]

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Sn‐based perovskite material is one of the promising absorption materials due to its low toxicity and narrow bandgap. However, the unsatisfying quality of the perovskite film caused by Sn2+ oxidation and poor crystal growth greatly hinders the device performance. Herein, a layer of tetrapotassium hexacyanoferrate at the PEDOT:PSS/FASnI3 interface is introduced, which can minimize the concentration of Sn4+, thereby suppressing the defect states in the perovskite film, enhancing the conductivity of the PEDOT:PSS film, and forming well‐matched energy alignment in the device. Consequently, the champion device performance of 8.9% is obtained by the modified device, and the unencapsulated device can keep outstanding stability in N2 atmosphere. [ABSTRACT FROM AUTHOR]

All‐inorganic perovskites have attracted substantial interest due to their outstanding thermal stability. However, the device performance is still inferior to the typical organic–inorganic counterparts because of the unsatisfying phase stability and defects of the inorganic perovskite films. Herein, a multistrategy to optimize CsPbI2Br perovskite solar cells (PSCs) based on dopant‐free poly(3‐hexylthiophene) (P3HT) by applying thienylmethylamine acetate additive to enhance the α phase stability and passivate the bulk defects of CsPbI2Br perovskite is successfully demonstrated, followed by implementing BTCIC‐4Cl interlayer at CsPbI2Br/P3HT interface, which can coordinate with both perovskite and P3HT to suppress the surface defects and promote the hole transport. Benefitting from these, a champion power conversion efficiency (PCE) of 16.3% is achieved, and the unencapsulated optimized device can retain 97% of the initial PCE after aging under N2 atmosphere at 85 °C for 530 h. This work opens up a new era of multistrategy for improving performance and stability of CsPbI2Br PSCs based on dopant‐free hole transport layer. [ABSTRACT FROM AUTHOR]

The non‐wetting issue of the self‐assembled monolayer (SAM) layer can complicate subsequent perovskite deposition and impact device efficiency. This study addresses this challenge using a dual approach involving co‐self‐assembly and a buffer layer to enhance the wettability and interfacial contact of the buried perovskite film. A weakly acidic boronic acid derivative, 4‐N, N‐dimethylbenzeneboronic acid hydrochloride (4NPBA), is used to co‐self‐assemble with the regular SAM molecule on ITO and the subsequent FAI buffer layer further increased perovskite film coverage to 89%. This dual buried interface strategy—SAM‐4NPBA/FAI—results in a flat and dense perovskite interface. The optimized device demonstrates a high fill factor of 88.35%, a power conversion efficiency of 25.29%, and retains over 99% of its initial efficiency after 500 h of maximum power point testing. [ABSTRACT FROM AUTHOR]

Interface instability has evolved into the primary aspect that limits the durability improvement of perovskite solar cells (PSCs). Interface modification with suitable molecules is widely considered an effective path for improving the interface state. Herein, an ionic liquid modified layer, 1-ethyl-3-methylimidazolium aminoacetate (EMIMAE), is brought to modify NiO x /perovskite interface. The EMIMAE layer can interact with the adjacent layer to regulate the perovskite growth, passivate defects in the film, and promote charge transport in PSCs. Eventually, the optimized device's efficiency rises to 18.6%, which is a substantial improvement over the control device. Particularly, after 1000 h of continuous maximum power point tracking, the device can still retain 95% of its initial efficiency. This work proposes a simple idea to ameliorate the device interface and boost the commercialization of NiO x based devices.

The black-phase formamidinium lead triiodide (α-FAPbI 3 ) perovskite has turned out to be one of the most efficient light harvesting materials. However, the phase stability of FAPbI 3 is a long-standing issue. Herein, we introduce a layer of tetrabutylammonium fluoride (TBAF) on SnO 2 , which would form an in situ layer of TBAPbI 3 perovskitoid at the SnO 2 /FAPbI 3 interface by interacting with PbI 2 . The results show that this strategy could improve the conductivity of SnO 2 , passivate the defects in perovskite, improve the phase stability of α-FAPbI 3 , and retard the nonradiative recombination in the device. As a result, we obtain a champion device with a power conversion efficiency of 23.1% under AM 1.5 G illumination of 100 mW/cm 2 . The unencapsulated devices can maintain excellent stability under illumination, thermal stress, and humidity conditions, respectively.

We grew a series of co-doped LiNbO 3 crystals with fixed 1.5 mol % ZrO 2 and various MgO concentrations (1.0, 3.0, 4.0, 6.0 mol %), and investigated their optical properties and defect structures. By 3.0 mol % MgO co-doping, the optical damage resistance at 532 nm reached 6.5 × 10 6 W/cm 2 , while the phase-matching temperature for doubling 1064 nm was only 29.3 °C-close to room temperature-which was conducive to realizing the 90° phase matching at room temperature by slightly modulating the incident angle of the fundamental beam. Notably, we found that the phase-matching temperature increased linearly with the increase of MgO doping, and this linear dependence helped us to grow the high-quality crystal for room temperature 90° phase matching. Moreover, the defect analysis indicated that the linear tuning of phase-matching temperature might be attributed to Mg Li + + Zr Nb - neutral pairs in crystals.