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In the present world, the high energy demand rapidly depletes existing fossil fuel reserves, urging the necessity to harvest energy from clean and renewable resources. In this study, the use of a triboelectric nanogenerator (TENG) is shown beyond the conventional practice of use in self-powered electronics, to the production of green hydrogen from renewable mechanical energy. For the first time the use of a magnetic covalent organic framework composite as positive triboelectric material for a contact-separation mode TENG (CS-TENG) in which MXene incorporated polydimethylsiloxane (PDMS) film serves as negative triboelectric material, is demonstrated. A facile way of incorporating micropatterns on the surface of PDMS/MXene film is shown utilizing the advantages of 3D printing technology. The CS-TENG harvests energy from simple mechanical actions such as human handclapping and toe-tapping. The energy from such low-scale mechanical actions is applied for water electrolysis. Scanning electrochemical microscopy is employed to confirm the evolution of hydrogen and oxygen by the harvested electrical energy from mechanical actions. This research is expected to pave the way for producing green hydrogen anywhere, by utilizing the mechanical energy from nature such as raindrops, wind, and the movement of vehicles.

Recent experiments related to a study concerning the adsorption of water on graphene have demonstrated the p-doping of graphene, although most of the ab initio calculations predict nearly zero doping. To shed more light on this problem, we have carried out van der Waals density functional theory calculations of water on graphene for both individual water molecules and continuous water layers with coverage ranging from one to eight monolayers. Furthermore, we have paid attention to the influence of the water molecule orientation toward graphene on its doping properties. In this article, we present the results of the band structure and the Bader charge analysis, showing the p-doping of graphene can be synergistically enhanced by putting 4-8 layers of an ice-like water structure on graphene having the water molecules oriented with oxygen atoms toward graphene.

As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.

Surface-enhanced Raman spectroscopy (SERS) is a perspective nondestructive analytic technique enabling the detection of individual nanoobjects, even single molecules. In this paper, we have studied the morphology of Ga islands deposited on chemical vapor deposition graphene by ultrahigh vacuum evaporation and local optical response of this system by the correlative Raman imaging and scanning electron microscopy (RISE). Contrary to the previous papers, where only an integral Raman response from the whole ununiformed Ga nanoparticles (NPs) ensembles on graphene was investigated, the RISE technique has enabled us to detect graphene Raman peaks enhanced by single Ga islands and particularly to correlate the Raman signal with the shape and size of these single particles. In this way and by a support of numerical simulations, we have proved a plasmonic nature of the Raman signal enhancement related to localized surface plasmon resonances. It has been found that this enhancement is island-size-dependent and shows a maximum for medium-sized Ga islands. A reasonable agreement between the simulations of the plasmon enhancement of electric fields in the vicinity of Ga islands and the experimental intensities of corresponding Raman peaks proved the plasmonic origin of the observed effect known as SERS. © 2022 American Chemical Society.

The objective of this work is to study the delamination of bismuth ferrite prepared by atomic layer deposition on highly oriented pyrolytic graphite (HOPG) substrate. The samples’ structures and compositions are provided by XPS, secondary ion mass spectrometry (SIMS) and Raman spectroscopy. The resulting films demonstrate buckling and delamination from the substrates. The composition inside the resulting bubbles is in a gaseous state. It contains the reaction products captured on the surface during the deposition of the film. The topography of Bi-Fe-O thin films was studied in vacuum and under atmospheric conditions using simultaneous SEM and atomic force microscopy (AFM). Besides complementary advanced imaging, a correlative SEM-AFM analysis provides the possibility of testing the mechanical properties by using a variation of pressure. In this work, the possibility of studying the surface tension of the thin films using a joint SEM-AFM analysis is shown., Cílem této práce je studium delaminace feritu bizmutu připraveného nanesením atomových vrstev na substrát vysoce orientovaného pyrolytického grafitu (HOPG).

Motivated by experimental results on transport properties of graphene covered by gallium atoms, the density functional theory study of clustering of gallium atoms on graphene (up to a size of 8 atoms) is presented. The paper explains a rapid initial increase of graphene electron doping by individual Ga atoms with Ga coverage, which is continually reduced to zero, when bigger multiple-atom clusters have been formed. According to density functional theory calculations with and without the van der Waals correction, gallium atoms start to form a three-dimensional cluster from five and three atoms, respectively. The results also explain an easy diffusion of Ga atoms while forming clusters caused by a small diffusion barrier of 0.11 eV. Moreover, the calculations show this barrier can be additionally reduced by the application of an external electric field, which was simulated by the ionization of graphene. This effect offers a unique possibility to control the cluster size in experiments only by applying a gate-voltage to the graphene in a field-effect transistor geometry and thereby without growth temperature assistance.

Hysteresis is a problem in field-effect transistors (FETs) often caused by defects and charge traps inside a gate isolating (e.g., SiO2) layer. This work shows that graphene-based FETs also exhibit hysteresis due to water physisorbed on top of graphene determined by the relative humidity level, which naturally happens in biosensors and ambient operating sensors. The hysteresis effect is explained by trapping of electrons by physisorbed water, and it is shown that this hysteresis can be suppressed using short pulses of alternating gate voltages.

The article shows how the dynamic mapping of surface potential (SP) measured by Kelvin probe force microscopy (KPFM) in combination with calculation by a diffusion-like equation and the theory based on the Brunauer-Emmett-Teller (BET) model of water condensation and electron hopping can provide the information concerning the resistivity of low conductive surfaces and their water coverage. This is enabled by a study of charge transport between isolated and grounded graphene sheets on a silicon dioxide surface at different relative humidity (RH) with regard to the use of graphene in ambient electronic circuits and especially in sensors. In the experimental part, the chemical vapor-deposited graphene is precisely patterned by the mechanical atomic force microscopy (AFM) lithography and the charge transport is studied through a surface potential evolution measured by KPFM. In the computational part, a quantitative model based on solving the diffusion-like equation for the charge transport is used to fit the experimental data and thus to find the SiO2 surface resistivity ranging from 107 to 1010 Ω and exponentially decreasing with the RH increase. Such a behavior is explained using the formation of water layers predicted by the BET adsorption theory and electron-hopping theory that for the SiO2 surface patterned by AFM predicts a high water coverage even at low RHs. © 2018 American Chemical Society.

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