1. Correlation analysis of vibration modes in physical vapour deposited Bi 2 Se 3 thin films probed by the Raman mapping technique.
- Author
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Niherysh KA, Andzane J, Mikhalik MM, Zavadsky SM, Dobrokhotov PL, Lombardi F, Prischepa SL, Komissarov IV, and Erts D
- Abstract
In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in Bi
2 Se3 thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E2 g ) and out-of-plane (A2 1g ) Raman mode positions. For Bi2 Se3 films deposited on quartz, experimental datapoints are scattered along the line with a slope of ∼0.85, related to the distribution of hydrostatic strain. In contrast to quartz/Bi2 Se3 samples, for graphene/Bi2 Se3 heterostructures with the same thicknesses, an additional negative slope of ∼-0.85, which can be associated with the distribution of the in-plane ( a - b ) biaxial tensile strain due to the film-substrate lattice mismatch, is observed. The algorithm of phonon deformation potential (PDP) calculation based on the proposed strain analysis for the 3 nm thick Bi2 Se3 film deposited on the graphene substrate, where the strain is considered to be coherent across the thickness, is demonstrated. The PDPs for biaxial in-plane strain of the Bi2 Se3 3 nm film in in-plane and out-of-plane modes are equal to -7.64 cm-1 /% and -6.97 cm-1 /%, respectively., Competing Interests: There are no conflicts to declare., (This journal is © The Royal Society of Chemistry.)- Published
- 2021
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