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In this work we use electrostatic control of quantum Hall ferromagnetic transitions in CdMnTe quantum wells to study electron transport through individual domain walls (DWs) induced at a specific location. These DWs are formed due to hybridization of two counter-propagating edge states with opposite spin polarization. Conduction through DWs is found to be symmetric under magnetic field direction reversal, consistent with the helical nature of these DWs. We observe that long domain walls are in the insulating regime with localization length 4 - 6~$\mu$m. In shorter DWs the resistance saturates to a non-zero value at low temperatures. Mesoscopic resistance fluctuations in a magnetic field are investigated. The theoretical model of transport through impurity states within the gap induced by spin-orbit interactions agrees well with the experimental data. Helical DWs have required symmetry for the formation of synthetic p-wave superconductors. Achieved electrostatic control of a single helical domain wall is a milestone on the path to their reconfigurable network and ultimately to a demonstration of braiding of non-Abelian excitations., Comment: 5 pages and 5 figures in the main text + 5 pages and 9 figures in supplementary materials. New version is revised manuscript according to referees comments. New version doesn't contain any new data

Ferromagnetic transitions between quantum Hall states with different polarization at a fixed filling factor can be studied by varying the ratio of cyclotron and Zeeman energies in tilted magnetic field experiments. However, an ability to locally control such transitions at a fixed magnetic field would open a range of attractive applications, e.g. formation of a reconfigurable network of one-dimensional helical domain walls in a two-dimensional plane. Coupled to a superconductor, such domain walls can support non-Abelian excitation. In this article we report development of heterostructures where quantum Hall ferromagnetic (QHFm) transition can be controlled locally by electrostatic gating. A high mobility two-dimensional electron gas is formed in CdTe quantum wells with engineered placement of paramagnetic Mn impurities. Gate-induced electrostatic field shifts electron wavefunction in the growth direction and changes overlap between electrons in the quantum well and d-shell electrons on Mn, thus controlling the s-d exchange interaction and the field of the QHFm transition. The demonstrated shift of the QHFm transition at a filling factor $\nu=2$ is large enough to allow full control of spin polarization at a fixed magnetic field., Comment: 6 pages, 5 figures