1. Vertical field‐effect transistor using c‐axis aligned crystal indium–gallium–zinc oxide on glass substrate and prototype organic light‐emitting diode display.
- Author
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Nakada, Masataka, Shima, Yukinori, Jincho, Masami, Sato, Manabu, Kurosaki, Daisuke, Koezuka, Junichi, Okazaki, Kenichi, Saito, Motoharu, Kusunoki, Koji, Atsumi, Tomoaki, Seo, Norihiko, and Yamazaki, Shunpei
- Subjects
FIELD-effect transistors ,SUBSTRATES (Materials science) ,LIGHT emitting diodes ,FIELD-effect devices ,CRYSTALS ,INDIUM gallium zinc oxide ,GLASS-ceramics - Abstract
This study developed a technology for a vertical field‐effect transistor (VFET) incorporating c‐axis aligned crystal oxide semiconductor on a Gen 3.5 glass substrate. VFETs, with a channel length of 0.5 μm, demonstrated stable characteristics with minimal variation, higher on‐state current compared with low‐temperature polysilicon FETs, and extremely low off‐state leakage current. A prototype 513‐ppi organic light‐emitting diode display that features a red, green, and blue stripe arrangement and includes an internal compensation circuit with a configuration of six transistors and two capacitors was fabricated by harnessing the advantageous features of VFETs. Such a display was previously unattainable with planar FETs. Thus, the developed VFET technology presents a viable pathway for achieving ultrahigh‐resolution panels on glass substrates. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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