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20 results on '"Kodati, S. H."'

3. Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

Author

Ronningen, T. J., primary, Kodati, S. H., additional, Jin, X., additional, Lee, S., additional, Jung, H., additional, Tao, X., additional, Lewis, H. I. J., additional, Schwartz, M., additional, Gajowski, N., additional, Martyniuk, P., additional, Guo, B., additional, Jones, A. H., additional, Campbell, J. C., additional, Grein, C., additional, David, J. P. R., additional, and Krishna, S., additional

Published
2023
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5. High gain, low noise 1550 nm GaAsSb/AlGaAsSb avalanche photodiodes

Author

Lee, S., primary, Jin, X., additional, Jung, H., additional, Lewis, H., additional, Liu, Y., additional, Guo, B., additional, Kodati, S. H., additional, Schwartz, M., additional, Grein, C., additional, Ronningen, T. J., additional, David, J. P. R., additional, Campbell, Joe. C., additional, and Krishna, S., additional

Published
2023
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8. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26

Author

Guo, B., primary, Jones, A. H., additional, Lee, S., additional, Kodati, S. H., additional, Liang, B., additional, Xue, X., additional, Pfiester, N. A., additional, Schwartz, M., additional, Winslow, M., additional, Grein, C. H., additional, Ronningen, T. J., additional, Krishna, S., additional, and Campbell, J. C., additional

Published
2021
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10. AlInAsSb avalanche photodiodes on InP substrates

Author

Kodati, S. H., primary, Lee, S., additional, Guo, B., additional, Jones, A. H., additional, Schwartz, M., additional, Winslow, M., additional, Pfiester, N. A., additional, Grein, C. H., additional, Ronningen, T. J., additional, Campbell, J. C., additional, and Krishna, S., additional

Published
2021
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13. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26.

Author

Guo, B., Jones, A. H., Lee, S., Kodati, S. H., Liang, B., Xue, X., Pfiester, N. A., Schwartz, M., Winslow, M., Grein, C. H., Ronningen, T. J., Krishna, S., and Campbell, J. C.

Subjects
AVALANCHE photodiodes, OPTICAL materials, QUANTUM efficiency, ABSORPTION coefficients, SPLINES, OPTICAL constants
Abstract

Digital alloy Al0.85Ga0.15As0.56Sb0.44 and random alloy Al0.79In0.21As0.74Sb0.26 avalanche photodiodes with a 1-μm multiplication layer exhibit low excess noise under 543-nm laser illumination comparable to Si avalanche photodiodes. This has motivated a study of the optical characteristics of these materials. The absorption coefficients and complex refractive indices were extracted via variable-angle spectroscopic ellipsometry. Features of three semiconductor layer fitting approaches are compared, and a Kramers–Kronig-consistent basis spline function was chosen due to its flexibility and accuracy of approximating optical constants of quaternary materials. The external quantum efficiency has been calculated based on the extracted absorption coefficients and is shown to agree well with the measured external quantum efficiency. [ABSTRACT FROM AUTHOR]

Published
2021
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19. Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate.

Author

Lee, S., Winslow, M., Grein, C. H., Kodati, S. H., Jones, A. H., Fink, D. R., Das, P, Hayat, M. M., Ronningen, T. J., Campbell, J. C., and Krishna, S.

Subjects
SUPERLATTICES, AVALANCHE photodiodes, IMPACT ionization, CHROMIUM-cobalt-nickel-molybdenum alloys, THRESHOLD energy
Abstract

We report on engineering impact ionization characteristics of In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k-value. We design InGaAs/AlInAs SL APDs with three different SL periods (4 ML, 6 ML, and 8 ML) to achieve the same composition as Al0.4Ga0.07In0.53As quaternary random alloy (RA). The simulated results of an RA and the three SLs predict that the SLs have lower k-values than the RA because the electrons can readily reach their threshold energy for impact ionization while the holes experience the multiple valence minibands scattering. The shorter period of SL shows the lower k-value. To support the theoretical prediction, the designed 6 ML and 8 ML SLs are experimentally demonstrated. The 8 ML SL shows k-value of 0.22, which is lower than the k-value of the RA. The 6 ML SL exhibits even lower k-value than the 8 ML SL, indicating that the shorter period of the SL, the lower k-value as predicted. This work is a theoretical modeling and experimental demonstration of engineering avalanche characteristics in InGaAs/AlInAs SLs and would assist one to design the SLs with improved performance for various SWIR APD application. [ABSTRACT FROM AUTHOR]

Published
2020
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20. Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26.

Author

Guo, B., Jones, A. H., Lee, S., Kodati, S. H., Liang, B., Xue, X., Pfiester, N. A., Schwartz, M., Winslow, M., Grein, C. H., Ronningen, T. J., Krishna, S., and Campbell, J. C.

Subjects
*AVALANCHE photodiodes, *OPTICAL materials, *QUANTUM efficiency, *ABSORPTION coefficients, *SPLINES, *OPTICAL constants
Abstract

Digital alloy Al0.85Ga0.15As0.56Sb0.44 and random alloy Al0.79In0.21As0.74Sb0.26 avalanche photodiodes with a 1-μm multiplication layer exhibit low excess noise under 543-nm laser illumination comparable to Si avalanche photodiodes. This has motivated a study of the optical characteristics of these materials. The absorption coefficients and complex refractive indices were extracted via variable-angle spectroscopic ellipsometry. Features of three semiconductor layer fitting approaches are compared, and a Kramers–Kronig-consistent basis spline function was chosen due to its flexibility and accuracy of approximating optical constants of quaternary materials. The external quantum efficiency has been calculated based on the extracted absorption coefficients and is shown to agree well with the measured external quantum efficiency. [ABSTRACT FROM AUTHOR]

Published
2021
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