Author: "Koak, B.-H." - Searchworks@Jio Institute Digital Library Search Results

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Author: Liu, W. S., Nicolet, M.-A., Park, H.-H., Koak, B.-H., and Lee, J.-W.
Subjects: GERMANIUM compounds, SILICON compounds, THIN films, ELECTRON spectroscopy
Abstract: Presents a study that analyzed a germanium (Ge)-silicon (Si)-oxygen film on GeSi, annealed in nitrogen-hydrogen by using Auger electron spectroscopy, backscattering spectrometry, x-ray photoelectron spectroscopy and secondary-ion mass spectrometry. Importance of silicon dioxide and nitride materials in Si technology; Information on the Auger electron depth profile of a GeSiO layer on GeSi annealed in ammonia.
Published: 1995
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Author: Park, H.-H., primary, Kwon, K.-H., additional, Lee, S.-H., additional, Nahm, S., additional, Lee, J.-W., additional, Koak, B.-H., additional, Suh, K.-S., additional, Kwon, O.-J., additional, Lee, J.-L., additional, and Yeom, G.-Y., additional
Published: 1993
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Author: Park, H.-H., primary, Kwon, K.-H., additional, Koak, B.-H., additional, Lee, S.-M., additional, Kwon, O.-J., additional, Kim, B.-W., additional, Lee, J.-W., additional, Yoo, J.-B., additional, and Sung, Y.-K., additional
Published: 1992
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Author: Park, H.-H., Kwon, K.-H., Koak, B.-H., Lee, S.-M., Kwon, O.-J., Kim, B.-W., Lee, J.-W., Yoo, J.-B., and Sung, Y.-K.
Published: 1992
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