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Summary Mechanoreceptors are essential components of the somatosensory system that convert received mechanical signals into electrical signals that can be sent to the brain. These receptors provide the ability to sense a variety of stimuli from the external environment, including touch, vibration, and heat. Mechanoreceptors do not convert signals monotonically; in addition, several fundamental characteristics are embedded in mechanoreceptors, including thresholds and adaptation properties. In this study, we proposed and experimentally demonstrated a van der Waals stacking field-effect transistor (VS-FET), which was inspired by an FET with a floating gate structure, to realize the important characteristics of mechanoreceptors. The VS-FET can not only demonstrate the fundamental biological functions but also produce other unique properties such as fatigue and accommodation. We also integrated an artificial touch receptor with an array of the proposed VS-FET to demonstrate the feasibility of these devices experimentally in artificial humanoid systems.

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type mani...

The oxygen (O2)-dependent resistance change of multilayered molybdenum ditelluride (MoTe2) channels was characterized. A variation of the channel resistance could reproducibly determine relative O2...

Flexible manipulation of the carrier transport behaviors in two-dimensional materials determines their values of practical application in logic circuits. Here, we demonstrated the carrier-type manipulation in field-effect transistors (FETs) containing α-phase molybdenum ditelluride (MoTe

Recently, the demonstration of the ferroelectricity of $\alpha$ phase In 2 Se 3 $(\alpha -$In 2 Se 3 ) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of $\alpha -$In 2 Se 3 . By forming the hetero-junction of $\alpha -$In 2 Se 3 with the highly degenerated $\mathrm{p}^{+} -$Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of $2.3 \times 10^{6}$.

This work was supported by the Taiwan Ministry of Science and Technology (Grant No. MOST 108-2112-M-005-012-MY3 and 109-2112-M-005-013-MY3), and also supported in part by the National Natural Science Foundation of China under Grant No. 61974070 and 61874074, 1311 Talent Plan, and Start-Up Fund from Nanjing University of Posts and Telecommunications under Grant No. NY219003, and Shenzhen Peacock Plan (Grant No. KQTD2016053112042971).

In the present study, we aim to help improve the design of van der Waals stacking, i.e., vertical 2D electronics, by probing charge transport differences in both parallel and vertical conducting channels of layered molybdenum disulfide (MoS2), with thin graphite acting as source and drain electrodes. To avoid systematic errors and variable contact contributions to the MoS2 channel, parallel and vertical electronics are all fabricated and measured on the same conducting material. Large differences in the on/off current ratio, mobility, and charge fluctuations, between parallel and vertical electronics are evident in electrical performance as well as in charge transport mechanisms. Further insights are drawn from a well-constrained analysis of both temperature-dependent current-voltage characteristics and low-frequency (LF) current fluctuations. This work offers significant insight into the fundamental understanding of charge transport and the development of future layered-materials-based integration technology.

The oxygen (O

Modern technology allows us to mimic biological functions with artificial devices. The human brain, including numerous neural cells that connect via synapses, enables us to handle complex tasks with ultra-low power consumption, which is one of the most important biological components that eager to emulate. Here, we propose and build a simple indium selenide (InSe)-based photonic synaptic device with unique gate tunable behaviours such as time-varying output current, auto-depression rate, and paired-pulse facilitation (PPF). A new inverse PPF behaviour is observed, characterized by the positive correlations to the time interval, which is opposite of those negative ones in previous studies. To unveil the origin of this new finding, both the substrate-dependent persistent photocurrent examination and low-frequency noise (LFN) measurements are performed to investigate the electric-controlled charge trapping/detrapping processes between the InSe and SiO2 interface. Furthermore, we systematically demonstrate such the specific evolution of the flexible plasticity within a low-operation voltage and a wide range of visible spectra. Interestingly, the inverse PPF can be employed to emulate more detailed characteristics of a biological brain such as the age-related changes of synaptic plasticity in real human brains. Thus, we believed that our findings provide a proof-of-concept for systematically mimicking the brain plasticity and advancing the development of energy-efficient artificial brains.

Multifunctional devices are expected to allow development of low-cost, highly integrated, and energy-efficient electronics for the internet of things (IoT) era. Here, we demonstrate an all-two-dimensional ReSe2/h-BN/graphene heterostructure (ReSe2 HS) consisting of a vertically coupled ReSe2 field-effect transistor and charge storage component, which possesses multifunctional characteristics for use in electronics and optoelectronics. As an electrically controlled non-volatile memory (NVM), the ReSe2 HS delivers high-performance multilevel data storage with a readout on/off current ratio exceeding 105 and excellent durability (>104 s) at an ultralow Vds of 50 mV, which benefits to the development of power saving devices. The ReSe2 HS design and high-photoresponsivity ReSe2 channel also achieve an energy efficient optical NVM with full-visible-spectrum distinction. Besides, the ReSe2 HS displays unique ambipolarity to operate as either an inverter or frequency doubler. We further propose a power-free ReSe2 HS optical memory matrix to simplify imaging systems. The ReSe2 HS shows promise for use in light-programmable information storage systems and neuromorphic computation with low power consumption.

Electrical contacts often dominate charge transport properties at the nanoscale because of considerable differences in nanoelectronic device interfaces arising from unique geometric and electrostatic features. Transistors with a tunable Schottky barrier between the metal and semiconductor interface might simplify circuit design. Here, germanium nanowire (Ge NW) transistors with Cu3 Ge as source/drain contacts formed by both buffered oxide etching treatments and rapid thermal annealing are reported. The transistors based on this Cu3 Ge/Ge/Cu3 Ge heterostructure show ambipolar transistor behavior with a large on/off current ratio of more than 105 and 103 for the hole and electron regimes at room temperature, respectively. Investigations of temperature-dependent transport properties and low-frequency current fluctuations reveal that the tunable effective Schottky barriers of the Ge NW transistors accounted for the ambipolar behaviors. It is further shown that this ambipolarity can be used to realize binary-signal and data-storage functions, which greatly simplify circuit design compared with conventional technologies.

An advanced 3D sample preparation technique is utilized to prepare TEM lamellas for tracing the partial dislocation site by plan view and observing the details and failure types by further cross-section milling. Primary twins which twin with Σ = 3, (11 1} are the major structural defects in STI structure. These instructions give you basic guidelines for preparing your manuscript for IPFA 2013 proceedings.