Search

The dataset includes

The attached data contains the results of measurements of B2O3-Bi2O3 and B2O3-Bi2O3+10AlF3 glasses doped with Eu3+ and Dy3+ ions in different molar ratios. Glasses were synthesized by the melt quenching technique. On their basis, the structural, optical, and luminescence properties of synthesized samples were characterized. The dataset includes XRD, FTIR, Raman, luminescence, and TRES results.

The attached data contains the results of measurements of phosphate glasses and glass-ceramics doped with Eu. On their basis, the new material was characterized and the influence of the SrF2 addition on the glass structure was determined. In addition, the influence of the SrF2 content and controlled crystallization on the luminescent properties of Eu3+ ions embedded in the glass matrix were described. The dataset includes XRD, DTA, DSC, FTIR, luminescence, and TRES results.

Gold plasmonic platforms have been coated with an ultra-thin films of aluminium oxide. Optical measurements, showing the influence of the thickness of Al2O3 on plasmon resonance position. The observed red-shift of the resonance location with the increase of the thickness of the Al2O3 film, can be explained by the change in the dielectric function of this film. In this repository tResults of measurements of Al2O3 ulra thin films and structures Au/Al2O3.

The DataSet contains the XRD,DTA and luminescence measurements for the B2O3-Bi2O3-AlF3 glass system. Samples were prepared by the conventional melt quenching technique. Starting materials were melted in porcelain crucibles at 950 oC for 20 min. XRD and DTA data were collected for 50B2O3-50Bi2O3,45B2O3-45Bi2O3+10AlF3 and 40B2O3-40Bi2O3+20AlF3 glasses. Luminescence spectra were obtained for 45B2O3-45Bi2O3+10AlF3 glass doped with Eu3+, Tb3+ and Tm3+ ions in different molar ratios (1:0.5Eu/0.5Tb/1Tm; 2: 0.7Eu/0.5Tb/0.8Tm; 3: 0.05Eu/0.95Tb/1Tm).

The DataSet contains the XRD patterns of the TeOx-BaO-BiO powder. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor), barium carbonate, and bismuth carbonate with thetraetylene glycol, water, ethanol, and acetic acid. (Samples molar concentration: 73TeO2-4BaO-3Bi2O3 and 73TeO2-3BaO-4Bi2O3). The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised to 75°C for the next 2h. The obtained gels were dried in two different ways. The 73TeO2-4BaO-3Bi2O3 and 73TeO2-3BaO-4Bi2O3 gels were dried at 120°C under an argon atmosphere. Next, the xerogel powders were first annealing at 340°C under an argon atmosphere, then at 450°C under oxidizing atmosphere. In the second approach, the 73TeO2-4BaO-3Bi2O3 gel was dried under 80 bar at 80°C in an autoclave.

Extensive processed UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.

The DataSet contains the XRD patterns of vanadium oxide nanostructures on silicon substrates obtained by recrystallization of V2O5 thin films between 800-1200°C under synthetic air. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials.

Uv-vis and SEM of Ag nanostructures. Structures were obtained by dewetting thin films. Various fabrication conditions i.e. temperature, time of the annealing and thickness of the initial layer were subsequently changed.

The DataSet contains the XRD patterns of the TeOx powder. The material was obtained by the sol-gel method. The starting solution was prepared by mixing telluric acid (precursor) with thetraetylene glycol, water, and ethanol. The sol was obtained by vigorously stirring precursor solution at 50°C for 2h, then the temperature was raised to 75°C for the next 2h. The obtained gel was dried at 120°C under an argon atmosphere. The xerogel powder was first annealing at 340°C under an argon atmosphere, then at 400°C or 450°C under oxidizing atmosphere.

The DataSet contains the XRD patterns of V2O5 thin films deposited on isotropic etching silicon substrates (111). The silicon wafers were etched in a mixture of nitric acid, hydrofluoric acid, and acetic acid in the ratio of 40:1:15. The soaking time for the substrates was from 30 to 90 seconds. The thin films were obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The sol was deposited on the silicon substrate and vanadium thin films were obtained by annealing as-prepared films at 600°C under synthetic air.

Raw data used for machine learning process. UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters. Small presentation reviewing achieved structures and their properties.

The DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (3-9 AsP layers) were deposited on a silicon substrate and were annealing at 500°C under an argon atmosphere.

Extensive UV-vis measurements of AuAg alloyed nanostructures created from thin films. Plasmonic band position dependence on fabrication parameters.

Luminescence and FTIR measurements of B2O3-Bi2O3-xSrF2+2Eu (x=10,20) glass and glass-ceramics. The emission and excitation spectra of the samples depend on the composition and annealing time.

The DataSet contains the XRD patterns of VO2 and V2O3 nanostructures obtained by the sol-gel with different reaction conditions. The information about xerogel powder synthesis is described in the Journal of Nanomaterials. The xerogel powder was annealing under argon atmosphere in the temperature range 400-1000C. The results show that the morphology dependent on the annealing temperature.

The DataSet contains the XRD patterns of VO2 and V2O3 thin films obtained by the sol-gel method. The information about sol synthesis is described in the Journal of Nanomaterials. The thin films with different thicknesses (5-9 AsP layers) were deposited on a silicon substrate and were annealing at 700°C under an argon atmosphere.