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Three-dimensional inspection of nanostructures such as integrated circuits is important for security and reliability assurance. Two scanning operations are required: ptychographic to recover the complex transmissivity of the specimen; and rotation of the specimen to acquire multiple projections covering the 3D spatial frequency domain. Two types of rotational scanning are possible: tomographic and laminographic. For flat, extended samples, for which the full 180 degree coverage is not possible, the latter is preferable because it provides better coverage of the 3D spatial frequency domain compared to limited-angle tomography. It is also because the amount of attenuation through the sample is approximately the same for all projections. However, both techniques are time consuming because of extensive acquisition and computation time. Here, we demonstrate the acceleration of ptycho-laminographic reconstruction of integrated circuits with 16-times fewer angular samples and 4.67-times faster computation by using a physics-regularized deep self-supervised learning architecture. We check the fidelity of our reconstruction against a densely sampled reconstruction that uses full scanning and no learning. As already reported elsewhere [Zhou and Horstmeyer, Opt. Express, 28(9), pp. 12872-12896], we observe improvement of reconstruction quality even over the densely sampled reconstruction, due to the ability of the self-supervised learning kernel to fill the missing cone., Comment: 13 pages, 5 figures, 1 table

Noninvasive X-ray imaging of nanoscale three-dimensional objects, e.g. integrated circuits (ICs), generally requires two types of scanning: ptychographic, which is translational and returns estimates of complex electromagnetic field through ICs; and tomographic scanning, which collects complex field projections from multiple angles. Here, we present Attentional Ptycho-Tomography (APT), an approach trained to provide accurate reconstructions of ICs despite incomplete measurements, using a dramatically reduced amount of angular scanning. Training process includes regularizing priors based on typical IC patterns and the physics of X-ray propagation. We demonstrate that APT with 12-time reduced angles achieves fidelity comparable to the gold standard with the original set of angles. With the same set of reduced angles, APT also outperforms baseline reconstruction methods. In our experiments, APT achieves 108-time aggregate reduction in data acquisition and computation without compromising quality. We expect our physics-assisted machine learning framework could also be applied to other branches of nanoscale imaging., Comment: 27 pages, 7 figures

We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales, i.e. the critical temperature $T_c$, the pairing energy $\Delta$, and the superfluid stiffness $J$, and the superfluid density $n_s$ can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K., Comment: 9 Pages

A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $\sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the film's surface grown $\textit{ex situ}$ by ALD. We find a large critical current density on the order of $4\times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications., Comment: 5 pages, 4 figures

Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (\alpha-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates., Comment: 3 figures, 1 table, ~4 pages

Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 {\AA}/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity {\rho}=150 {\mu}{\Omega}.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique., Comment: 9 figures, ~ 10 pages. Poster Jeffrey Klug @ ALD conference 2010