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Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials.

Conventional antiferromagnets are known for their time-reversal symmetry in their electronic structure, which results in a zero anomalous Hall coefficient. On the other hand, compensated magnets with noncollinear or canted moments or altermagnets can yield a nonzero anomalous Hall signal and a nondissipative transversal current. While high-symmetry systems typically exhibit an isotropic Hall effect, more interesting are low-symmetry systems, such as hematite, which demonstrates exceptional magnetotransport behavior as it becomes conductive upon slight Ti doping. We scrutinize the magnetotransport in Titanium-doped hematite, revealing a pronounced and unconventional symmetry dependence, particularly contingent on crystal orientation. Our findings establish a compelling correlation between our experimental observations and the classification of hematite as an altermagnet with anisotropic magnetotransport and anomalous Hall effect. Remarkably, our observations result from measurements in the hopping-transport regime, showing that particular transport properties in altermagnets are not limited to conventional band conduction.

Hard X-ray angle-resolved photoemission spectroscopy reveals the momentum-resolved band structure in an epitaxial Mn2Au(001) film capped by a 2 nm thick ferromagnetic Permalloy layer. By magnetizing the Permalloy capping layer, the exceptionally strong exchange bias aligns the Neel vector in the Mn2Au(001) film accordingly. Uncompensated interface Mn magnetic moments in Mn2Au were identified as the origin of the exchange bias using X-ray magnetic circular dichroism in combination with photoelectron emission microscopy. Using time-of-flight momentum microscopy, we measure the asymmetry of the band structure in Mn2Au resulting from the homogeneous orientation of the Neel vector. Comparison with theory shows that the Neel vector, determined by the magnetic moment of the top Mn layer, is antiparallel to the Permalloy magnetization. The experimental results demonstrate that hard X-ray photoemission spectroscopy can measure the band structure of epitaxial layers beneath a metallic capping layer and corroborate the asymmetric band structure in Mn2Au that was previously inferred only indirectly., Comment: 7 pages, 4 figures

Altermagnets are an emerging third elementary class of magnets. Unlike ferromagnets, their distinct crystal symmetries inhibit magnetization while, unlike antiferromagnets, they promote strong spin polarization in the band structure. The corresponding unconventional mechanism of timereversal symmetry breaking without magnetization in the electronic spectra has been regarded as a primary signature of altermagnetism, but has not been experimentally visualized to date. We directly observe strong time-reversal symmetry breaking in the band structure of altermagnetic RuO$_2$ by detecting magnetic circular dichroism in angle-resolved photoemission spectra. Our experimental results, supported by ab initio calculations, establish the microscopic electronic-structure basis for a family of novel phenomena and functionalities in fields ranging from topological matter to spintronics, that are based on the unconventional time-reversal symmetry breaking in altermagnets.

Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest has resurged due to the recent observation of long-distance spin transport, current-induced switching, and THz emission. As a result, insulating transition metal oxides are now considered to be attractive candidates for active elements in novel spintronic devices. Here, we discuss some of the most promising materials systems and highlight recent advances in reading and writing antiferromagnetic ordering. This article aims to provide an overview of the current research and potential future directions in the field of antiferromagnetic insulatronics.

Antiferromagnetic materials have been proposed as new types of narrowband THz spintronic devices owing to their ultrafast spin dynamics. Manipulating coherently their spin dynamics, however, remains a key challenge that is envisioned to be accomplished by spin-orbit torques or direct optical excitations. Here, we demonstrate the combined generation of broadband THz (incoherent) magnons and narrowband (coherent) magnons at 1 THz in low damping thin films of NiO/Pt. We evidence, experimentally and through modelling, two excitation processes of magnetization dynamics in NiO, an off-resonant instantaneous optical spin torque and a strain-wave-induced THz torque induced by ultrafast Pt excitation. Both phenomena lead to the emission of a THz signal through the inverse spin Hall effect in the adjacent heavy metal layer. We unravel the characteristic timescales of the two excitation processes found to be < 50 fs and > 300 fs, respectively, and thus open new routes towards the development of fast opto-spintronic devices based on antiferromagnetic materials.

Different models have been used to evaluate the interfacial Dzyaloshinskii-Moriya interaction (DMI) from the asymmetric bubble expansion method using magneto-optics. Here we investigate the most promising candidates over a range of different magnetic multilayers with perpendicular anisotropy. Models based on the standard creep hypothesis are not able to reproduce the domain wall (DW) velocity profile when the DW roughness is high. Our results demonstrate that the DW roughness and the interface roughness of the sample layers are correlated. Furthermore, we give guidance on how to obtain reliable results for the DMI value with this popular method. A comparison of the results with Brillouin light scattering (BLS) measurements on the same samples shows that the BLS approach often results in higher measured values of DMI.

We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a non-magnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.

In antiferromagnets, the efficient propagation of spin-waves has until now only been observed in the insulating antiferromagnet hematite, where circularly (or a superposition of pairs of linearly) polarized spin-waves propagate over long distances. Here, we report long-distance spin-transport in the antiferromagnetic orthoferrite YFeO$_3$, where a different transport mechanism is enabled by the combined presence of the Dzyaloshinskii-Moriya interaction and externally applied fields. The magnon decay length is shown to exceed hundreds of nano-meters, in line with resonance measurements that highlight the low magnetic damping. We observe a strong anisotropy in the magnon decay lengths that we can attribute to the role of the magnon group velocity in the propagation of spin-waves in antiferromagnets. This unique mode of transport identified in YFeO$_3$ opens up the possibility of a large and technologically relevant class of materials, i.e., canted antiferromagnets, for long-distance spin transport., Comment: Manuscript - 24 pages and 4 figures, Supplementary - 22 pages and 10 figures

All-optical ferromagnetic resonance (AO-FMR) is a powerful tool for local detection of micromagnetic parameters, such as magnetic anisotropy, Gilbert damping or spin stiffness. In this work we demonstrate that the AO-FMR method can be used in thin films of Yttrium Iron Garnet (YIG) if a metallic capping layer (Au, Pt) is deposited on top of the film. Magnetization precession is triggered by heating of the metallic layer with femtosecond laser pulses. The heating modifies the magneto-crystalline anisotropy of the YIG film and shifts the quasi-equilibrium orientation of magnetization, which results in precessional magnetization dynamics. The laser-induced magnetization precession corresponds to a uniform (Kittel) magnon mode, with the precession frequency determined by the magnetic anisotropy of the material as well as the external magnetic field, and the damping time set by a Gilbert damping parameter. The AO-FMR method thus enables measuring local magnetic properties, with spatial resolution given only by the laser spot size.

Magnonics is a field of science that addresses the physical properties of spin waves and utilizes them for data processing. Scalability down to atomic dimensions, operations in the GHz-to-THz frequency range, utilization of nonlinear and nonreciprocal phenomena, and compatibility with CMOS are just a few of many advantages offered by magnons. Although magnonics is still primarily positioned in the academic domain, the scientific and technological challenges of the field are being extensively investigated, and many proof-of-concept prototypes have already been realized in laboratories. This roadmap is a product of the collective work of many authors that covers versatile spin-wave computing approaches, conceptual building blocks, and underlying physical phenomena. In particular, the roadmap discusses the computation operations with Boolean digital data, unconventional approaches like neuromorphic computing, and the progress towards magnon-based quantum computing. The article is organized as a collection of sub-sections grouped into seven large thematic sections. Each sub-section is prepared by one or a group of authors and concludes with a brief description of the current challenges and the outlook of the further development of the research directions., Comment: 74 pages, 57 figures, 500 references

We report on observation of a magneto-optical effect quadratic in magnetization (Cotton-Mouton effect) in 50 nm thick layer of Yttrium-Iron Garnet (YIG). By a combined theoretical and experimental approach, we managed to quantify both linear and quadratic magneto-optical effects. We show that the quadratic magneto-optical signal in the thin YIG film can exceed the linear magneto-optical response, reaching values of 450 urad that are comparable with Heusler alloys or ferromagnetic semiconductors. Furthermore, we demonstrate that a proper choice of experimental conditions, particularly with respect to the wavelength, is crucial for optimization of the quadratic magneto-optical effect for magnetometry measurement.

In the realm of two-dimensional materials magnetic and transport properties of a unique representative $-$ Fe$_3$GeTe$_2$ $-$ attract ever increasing attention. Here, we use a developed first-principles method for calculating laser-induced response to study the emergence of photo-induced currents of charge and spin in single-layer Fe$_3$GeTe$_2$, which are of second order in the electric field. We provide a symmetry analysis of the emergent photocurrents in the system finding it to be in excellent agreement with ab-initio calculations. We analyse the magnitude and behavior of the charge photocurrents with respect to disorder strength, frequency and band filling. Remarkably, not only do we find a large charge current response, but also predict that Fe$_3$GeTe$_2$ can serve as a source of significant laser-induced spin-currents, which makes this material as a promising platform for various applications in optospintronics.

The Dzyaloshinskii-Moriya interaction (DMI) is at the heart of many modern developments in the research field of spintronics. DMI is known to generate noncollinear magnetic textures, and can take two forms in antiferromagnets: homogeneous or inter-sublattice, leading to small, canted moments and inhomogeneous or intra-sublattice, leading to formation of chiral structures. In this work, we first determine the strength of the effective field created by the DMI, using SQUID based magnetometry and transport measurements, in thin films of the antiferromagnetic iron oxide hematite, $\alpha$-Fe$_2$O$_3$. We demonstrate that DMI additionally introduces reconfigurability in the long distance magnon transport in these films under different orientations of a magnetic field. This arises as a hysteresis centred around the easy-axis direction for an external field rotated in opposing directions whose width decreases with increasing magnetic field as the Zeeman energy competes with the effective field created by the DMI.

In antiferromagnetic spintronics, the read-out of the staggered magnetization or Neel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Neel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit from the well-estabished read-out methods of ferromagnets, while the essential advantages of antiferromagnetic spintronics are retained. We show one-to-one imprinting of the antiferromagnetic on the ferromagnetic domain pattern. Conversely, alignment of the Permalloy magnetization reorients the Mn2Au Neel vector, an effect, which can be restricted to large magnetic fields by tuning the ferromagnetic layer thickness. To understand the origin of the strong coupling, we carry out high resolution electron microscopy imaging and we find that our growth yields an interface with a well-defined morphology that leads to the strong exchange coupling., Comment: 9 pages, 5 figures

Low power spintronic devices based on the propagation of pure magnonic spin currents in antiferromagnetic insulator materials offer several distinct advantages over ferromagnetic components including higher frequency magnons and a stability against disturbing external magnetic fields. In this work, we make use of the insulating antiferromagnetic phase of iron oxide, the mineral hematite $\alpha$-Fe$_2$O$_3$ to investigate the long distance transport of thermally generated magnonic spin currents. We report on the excitation of magnons generated by the spin Seebeck effect, transported both parallel and perpendicular to the antiferromagnetic easy-axis under an applied magnetic field. Making use of an atomistic hematite toy model, we calculate the transport characteristics from the deviation of the antiferromagnetic ordering from equilibrium under an applied field. We resolve the role of the magnetic order parameters in the transport, and experimentally we find significant thermal spin transport without the need for a net magnetization.

We study theoretically and experimentally the spin pumping signals induced by the resonance of canted antiferromagnets with Dzyaloshinskii-Moriya interaction and demonstrate that they can generate easily observable inverse spin-Hall voltages. Using a bilayer of hematite/heavy metal as a model system, we measure at room temperature the antiferromagnetic resonance and an associated inverse spin-Hall voltage, as large as in collinear antiferromagnets. As expected for coherent spin-pumping, we observe that the sign of the inverse spin-Hall voltage provides direct information about the mode handedness as deduced by comparing hematite, chromium oxide and the ferrimagnet Yttrium-Iron Garnet. Our results open new means to generate and detect spin-currents at terahertz frequencies by functionalizing antiferromagnets with low damping and canted moments.

As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts, but without the limitation of epitaxial growth and lattice matched substrates. Here, we first report the detection of the average Neel vector orientiation in polycrystalline NiO via spin Hall magnetoresistance (SMR). Secondly, by applying strain through a piezo-electric substrate, we reduce the critical magnetic field required to reach a saturation of the SMR signal, indicating a change of the anisotropy. Our results are consistent with polycrystalline NiO exhibiting a positive sign of the in-plane magnetostriction. This method of anisotropy-tuning offers an energy efficient, on-chip alternative to manipulate a polycrystalline antiferromagnets magnetic state.

We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin, in which the final state is defined by the strain distributions and heat is required to switch the antiferromagnetic domains. We show that such a potentially very versatile non-contact mechanism can explain the previously reported contradicting observations of the switching final state, which were attributed to spin-orbit torque mechanisms.

In antiferromagnetic spintronics, it is essential to separate the resistance modifications of purely magnetic origin from other effects generated by current pulses intended to switch the N\'eel vector. We investigate the magnetoresistance effects resulting from magnetic field induced reorientations of the staggered magnetization of epitaxial antiferromagnetic Mn2Au(001) thin films. The samples were exposed to 60 T magnetic field pulses along different crystallographic in-plane directions of Mn2Au(001), while their resistance was measured. For the staggered magnetization aligned via a spin-flop transition parallel to the easy [110]-direction, an ansiotropic magnetoresistance of -0.15 % was measured. In the case of a forced alignment of the staggered magnetization parallel to the hard [100]-direction, evidence for a larger anisotropic magnetoresistance effect was found. Furthermore, transient resistance reductions of about 1 % were observed, which we associate with the annihilation of antiferromagnetic domain walls by the magnetic field pulses., Comment: 6 pages, 4 figures

We report a combined study of imaging the antiferromagnetic (AFM) spin structure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$. X-ray magnetic linear dichroism photoemission electron microscopy measurements reveal that the AFM spins of the SmFeO$_3$(110) align in the plane of the film. Angularly dependent magnetoresistance measurements show that SmFeO$_3$/Ta bilayers exhibit a positive SMR, in contrast to the negative SMR expected in previously studied collinear AFMs. The SMR amplitude increases linearly with increasing external magnetic field at higher magnetic field, suggesting that field-induced canting of the AFM spins plays an important role. In contrast, around the coercive field, no detectable SMR signal is observed, indicating that SMR of AFM and canting magnetization components cancel out. Below 50~K, the SMR amplitude increases sizably by a factor of two as compared to room temperature, which likely correlates with the long-range ordering of the Sm ions. Our results show that the SMR is a sensitive technique for non-equilibrium spin system of non-collinear AFM systems., Comment: Accepted for publication in Journal of Physics: Condensed Matter. This is the version of the article before peer review or editing, as submitted by an author to Journal of Physics: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it

Interfacing an organic semiconductor C60 with a non-magnetic metallic thin film (Cu or Pt) has created a novel heterostructure that is ferromagnetic at ambient temperature, while its interface with a magnetic metal (Fe or Co) can tune the anisotropic magnetic surface property of the material. Here, we demonstrate that sandwiching C60 in between a magnetic insulator (Y3Fe5O12: YIG) and a non-magnetic, strong spin-orbit metal (Pt) promotes highly efficient spin current transport via the thermally driven spin Seebeck effect (SSE). Experiments and first principles calculations consistently show that the presence of C60 reduces significantly the conductivity mismatch between YIG and Pt and the surface perpendicular magnetic anisotropy of YIG, giving rise to enhanced spin mixing conductance across YIG/C60/Pt interfaces. As a result, a 600% increase in the SSE voltage (VLSSE) has been realized in YIG/C60/Pt relative to YIG/Pt. Temperature-dependent SSE voltage measurements on YIG/C60/Pt with varying C60 layer thicknesses also show an exponential increase in VLSSE at low temperatures below 200 K, resembling the temperature evolution of spin diffusion length of C60. Our study emphasizes the important roles of the magnetic anisotropy and the spin diffusion length of the intermediate layer in the SSE in YIG/C60/Pt structures, providing a new pathway for developing novel spin-caloric materials.

The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible N\'eel vector reorientation was obtained in different parts of the samples and the switching of up to 30 % of all domains in the field of view of 10 $\mu$m is demonstrated. Our direct microscopical observations are compared to and fully consistent with anisotropic magnetoresistance effects previously attributed to current induced N\'eel vector switching in Mn$_2$Au., Comment: 5 pages, 4 figures

Many Heusler compounds are predicted to be ferromagnetic half metals in the bulk, which makes them promising compounds for spintronics. However, for devices the transport spin polarization at specific interfaces requires optimization. We show that investigations of the unidirectional magnetoresistance provide an alternative approach to access this quantity. Based on a Wheatstone-bridge design we probed the unidirectional magnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers and separate the spin-dependent unidirectional spin Hall magnetoresistance from other contributions. We demonstrated that by the insertion of a thin epitaxial Ag layer the spin-dependent contribution is doubled corresponding to a significant increase of the transport spin polarization, which is discussed in the framework of highly spin polarized interface states., Comment: 6 pages, 4 figures

We measure and analyze the chirality of the Dzyaloshinskii-Moriya interaction (DMI) stabilized spin textures in multilayers of Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO. The effective DMI is measured experimentally using domain wall motion measurements, both in the presence (using spin orbit torques) and absence of driving currents (using magnetic fields). We observe that the current-induced domain wall motion yields a change in effective DMI magnitude and opposite domain wall chirality when compared to field-induced domain wall motion (without current). We explore this effect, which we refer to as current-induced DMI, by providing possible explanations for its emergence, and explore the possibilty of its manifestation in the framework of recent theoretical predictions of DMI modifications due to spin currents.

The Dzyaloshinskii-Moriya interaction (DMI) causes domain walls in perpendicular magnetized systems to adopt a homochiral configuration by winding in the same direction for both Up-Down and Down-Up walls. The topology of these domain walls is then distinct from the uniformly magnetized state. When two domain walls approach each other and are in close proximity they form winding pairs, stabilized by a dipolar repulsion. This can result in the formation of 360 {\deg} stable domain walls, whose stability is directly related to the magnitude of the additional dipolar interaction resulting from the spin structure governed by the DMI. Application of an external magnetic field can overcome the dipolar repulsion of the winding pairs and result in the annihilation of the domain walls, which is studied here in a combined theoretical and experimental effort. We present an extended analytical model that studies the interaction and modification of the dipolar interaction of the domain wall pairs under the application of in-plane and out-of-plane magnetic fields. We realize the experiment in a system of Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO and observe that the results are in agreement with the behavior predicted by the analytical model. To compare and understand these results, we perform micromagnetic calculations to gauge the validity of the analytics and also include the full dipolar interactions which are present due to the device geometry. We find that our numerical and experimental studies are in agreement and that the DMI indeed provides an additional stability mechanism against annihilation of DWs, which is potentially useful in dense memory storage applications. Beyond implications for domain walls, understanding the interaction is an important step to understand and control the interaction of many spin structures that contain domain walls, such as skyrmions.

Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the long-distance transport of spin signals across ferromagnetic insulators. Antiferromagnetically ordered materials are however the most common class of magnetic materials with several crucial advantages over ferromagnetic systems. In contrast to the latter, antiferromagnets exhibit no net magnetic moment, which renders them stable and impervious to external fields. In addition, they can be operated at THz frequencies. While fundamentally their properties bode well for spin transport, previous indirect observations indicate that spin transmission through antiferromagnets is limited to short distances of a few nanometers. Here we demonstrate the long-distance, over tens of micrometers, propagation of spin currents through hematite (\alpha-Fe2O3), the most common antiferromagnetic iron oxide, exploiting the spin Hall effect for spin injection. We control the spin current flow by the interfacial spin-bias and by tuning the antiferromagnetic resonance frequency with an external magnetic field. This simple antiferromagnetic insulator is shown to convey spin information parallel to the compensated moment (N\'eel order) over distances exceeding tens of micrometers. This newly-discovered mechanism transports spin as efficiently as the net magnetic moments in the best-suited complex ferromagnets. Our results pave the way to ultra-fast, low-power antiferromagnet-insulator-based spin-logic devices that operate at room temperature and in the absence of magnetic fields.

In the field of antiferromagnetic (AFM) spintronics, information about the N\'eel vector, AFM domain sizes, and spin-flop fields is a prerequisite for device applications but is not available easily. We have investigated AFM domains and spin-flop induced changes of domain patterns in Mn2Au(001) epitaxial thin films by X-ray magnetic linear dichroism photoemission electron microscopy (XMLD-PEEM) using magnetic fields up to 70 T. As-prepared Mn$_2$Au films exhibit AFM domains with an average size $\sim$ 1 $\mu$m. Application of a 30T field, exceeding the spin-flop field, along a magnetocrystalline easy axis, dramatically increases the AFM domain size with N\'eel vectors perpendicular to the applied field direction. The width of N\'eel type domain walls (DW) is below the spatial resolution of the PEEM and therefore can only be estimated from an analysis of the DW profile to be smaller than 80 nm. Furthermore, using the values for the DW width and the spin-flop field, we evaluate an in-plane anisotropy constant ranging between 1 and 17 $\mu$eV/f.u.

We measure and analyze the effective spin Hall angle of platinum in the low residual resistivity regime by second harmonic measurements of the spin-orbit torques for a multilayer of Pt/Co/AlO$_x$. An angular dependent study of the torques allows us to extract the effective spin Hall angle responsible for the damping-like torque in the system. We observe a strikingly non-monotonic and reproducible temperature dependence of the torques. This behavior is compatible with recent theoretical predictions which include both intrinsic and extrinsic (impurities and phonons) contributions to the spin Hall effect at finite temperature.

We observe the excitation of collective modes in the THz range driven by the recently discovered N\'{e}el spin-orbit torques (NSOT) in the metallic antiferromagnet Mn$_{2}$Au. Temperature dependent THz spectroscopy reveals a strong absorption mode centered near 1 THz, which upon heating from 4 K to 450 K softens and looses intensity. Comparison with the estimated eigenmode frequencies implies that the observed mode is an in-plane antiferromagnetic resonance (AFMR) mode. The AFMR absorption strength exceeds those found in antiferromagnetic insulators, driven by the magnetic field of the THz radiation, by three orders of magnitude. Based on this and the agreement with our theory modelling, we infer that the driving mechanism for the observed mode is the current induced NSOT. This electric manipulation of the Ne\'{e}l order parameter at high frequencies makes Mn$_{2}$Au a prime candidate for AFM ultrafast memory applications., Comment: 5 pages, 4 figures

For many of the envisioned optoelectronic applications of graphene it is crucial to understand the sub-picosecond carrier dynamics immediately following photoexcitation, as well as the effect on the electrical conductivity - the photoconductivity. Whereas these topics have been studied using various ultrafast experiments and theoretical approaches, controversial and incomplete explanations have been put forward concerning the sign of the photoconductivity, the occurrence and significance of the creation of additional electron-hole pairs, and, in particular, how the relevant processes depend on Fermi energy. Here, we present a unified and intuitive physical picture of the ultrafast carrier dynamics and the photoconductivity, combining optical pump - terahertz probe measurements on a gate-tunable graphene device, with numerical calculations using the Boltzmann equation. We distinguish two types of ultrafast photo-induced carrier heating processes: At low (equilibrium) Fermi energy ($E_{\rm F} \lesssim$ 0.1 eV for our experiments) broadening of the carrier distribution involves interband transitions - interband heating. At higher Fermi energy ($E_{\rm F} \gtrsim$ 0.15 eV) broadening of the carrier distribution involves intraband transitions - intraband heating. Under certain conditions, additional electron-hole pairs can be created (carrier multiplication) for low $E_{\rm F}$, and hot carriers (hot-carrier multiplication) for higher $E_{\rm F}$. The resultant photoconductivity is positive (negative) for low (high) $E_{\rm F}$, which originates from the effect of the heated carrier distributions on the screening of impurities, consistent with the DC conductivity being mostly due to impurity scattering. The importance of these insights is highlighted by a discussion of the implications for graphene photodetector applications.

Understanding the transfer of spin angular momentum is essential in modern magnetism research. A model case is the generation of magnons in magnetic insulators by heating an adjacent metal film. Here, we reveal the initial steps of this spin Seebeck effect with <27fs time resolution using terahertz spectroscopy on bilayers of ferrimagnetic yttrium-iron garnet and platinum. Upon exciting the metal with an infrared laser pulse, a spin Seebeck current $j_\textrm{s}$ arises on the same ~100fs time scale on which the metal electrons thermalize. This observation highlights that efficient spin transfer critically relies on carrier multiplication and is driven by conduction electrons scattering off the metal-insulator interface. Analytical modeling shows that the electrons' dynamics are almost instantaneously imprinted onto $j_\textrm{s}$ because their spins have a correlation time of only ~4fs and deflect the ferrimagnetic moments without inertia. Applications in material characterization, interface probing, spin-noise spectroscopy and terahertz spin pumping emerge., Comment: 14 pages, 5 figures

We develop and analyze an advanced concept for domain wall based sensing of rotations. Moving domain walls in n closed loops with n-1 intersecting convolutions by rotating fields, we can sense n rotations. By combining loops with coprime numbers of rotations, we create a sensor system allowing for the total counting of millions of turns of a rotating applied magnetic field. We analyze the operation of the sensor and identify the intersecting cross structures as the critical component for reliable operation. In particular depending on the orientation of the applied field angle with the magnetization in the branches of the cross, a domain wall is found to propagate in an unwanted direction yielding failures and counting errors in the device. To overcome this limiting factor, we introduce a specially designed syphon structure to achieve the controlled pinning of the domain wall before the cross and depinning and propagation only for a selected range of applied field angles. By adjusting the syphon and the cross geometry, we find that the optimized combination of both structures prevents failures in the full sensor structure yielding robust operation. Our modeling results show that the optimized element geometry allows for the realization of the sensor with cross-shaped intersections and operation that is tolerant to inaccuracies of the fabrication.

Recent studies have shown that material structures, which lack structural inversion symmetry and have high spin-orbit coupling can exhibit chiral magnetic textures and skyrmions which could be a key component for next generation storage devices. The Dzyaloshinskii-Moriya Interaction (DMI) that stabilizes skyrmions is an anti-symmetric exchange interaction favoring non-collinear orientation of neighboring spins. It has been shown that material systems with high DMI can lead to very efficient domain wall and skyrmion motion by spin-orbit torques. To engineer such devices, it is important to quantify the DMI for a given material system. Here we extract the DMI at the Heavy Metal (HM) /Ferromagnet (FM) interface using two complementary measurement schemes namely asymmetric domain wall motion and the magnetic stripe annihilation. By using the two different measurement schemes, we find for W(5 nm)/Co20Fe60B20(0.6 nm)/MgO(2 nm) the DMI to be 0.68 +/- 0.05 mJ/m2 and 0.73 +/- 0.5 mJ/m2, respectively. Furthermore, we show that this DMI stabilizes skyrmions at room temperature and that there is a strong dependence of the DMI on the relative composition of the CoFeB alloy. Finally we optimize the layers and the interfaces using different growth conditions and demonstrate that a higher deposition rate leads to a more uniform film with reduced pinning and skyrmions that can be manipulated by Spin-Orbit Torques.

Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the same time active manipulation up to the natural THz dynamic speeds of antiferromagnets is possible, thus combining exceptional storage density and ultra-fast switching. However, the active manipulation and read-out of the N\'eel vector (staggered moment) orientation is challenging. Recent predictions have opened up a path based on a new spin-orbit torque, which couples directly to the N\'eel order parameter. This N\'eel spin-orbit torque was first experimentally demonstrated in a pioneering work using semimetallic CuMnAs. Here we demonstrate for Mn$_2$Au, a good conductor with a high ordering temperature suitable for applications, reliable and reproducible switching using current pulses and readout by magnetoresistance measurements. The symmetry of the torques agrees with theoretical predictions and a large read-out magnetoresistance effect of more than $\simeq 6$~$\%$ is reproduced by ab initio transport calculations., Comment: 5 pages, 4 figures

We study the key domain wall properties in segmented nanowires loop-based structures used in domain wall based sensors. The two reasons for device failure, namely the distribution of domain wall propagation field (depinning) and the nucleation field are determined with Magneto-Optical Kerr Effect (MOKE) and Giant Magnetoresistance (GMR) measurements for thousands of elements to obtain significant statistics. Single layers of Ni$_{81}$Fe$_{19}$, a complete GMR stack with Co$_{90}$Fe$_{10}$/Ni$_{81}$Fe$_{19}$ as a free layer and a single layer of Co$_{90}$Fe$_{10}$ are deposited and industrially patterned to determine the influence of the shape anisotropy, the magnetocrystalline anisotropy and the fabrication processes. We show that the propagation field is little influenced by the geometry but significantly by material parameters. The domain wall nucleation fields can be described by a typical Stoner-Wohlfarth model related to the measured geometrical parameters of the wires and fitted by considering the process parameters. The GMR effect is subsequently measured in a substantial number of devices (3000), in order to accurately gauge the variation between devices. This reveals a corrected upper limit to the nucleation fields of the sensors that can be exploited for fast characterization of working elements.

To explore the capabilities of metallic spintronic thin-film stacks as a source of intense and broadband terahertz electromagnetic fields, we excite a W/CoFeB/Pt trilayer on a large-area glass substrate (diameter of 7.5 cm) by a femtosecond laser pulse (energy 5.5 mJ, duration 40 fs, wavelength 800 nm). After focusing, the emitted terahertz pulse is measured to have a duration of 230 fs, a peak field of 300 kV cm$^{-1}$ and an energy of 5 nJ. In particular, the waveform exhibits a gapless spectrum extending from 1 to 10 THz at 10% of amplitude maximum, thereby facilitating nonlinear control over matter in this difficult-to-reach frequency range and on the sub-picosecond time scale., Comment: 7 pages, 4 figures

Terahertz electromagnetic radiation is extremely useful for numerous applications such as imaging and spectroscopy. Therefore, it is highly desirable to have an efficient table-top emitter covering the 1-to-30-THz window whilst being driven by a low-cost, low-power femtosecond laser oscillator. So far, all solid-state emitters solely exploit physics related to the electron charge and deliver emission spectra with substantial gaps. Here, we take advantage of the electron spin to realize a conceptually new terahertz source which relies on tailored fundamental spintronic and photonic phenomena in magnetic metal multilayers: ultrafast photo-induced spin currents, the inverse spin-Hall effect and a broadband Fabry-P\'erot resonance. Guided by an analytical model, such spintronic route offers unique possibilities for systematic optimization. We find that a 5.8-nm-thick W/CoFeB/Pt trilayer generates ultrashort pulses fully covering the 1-to-30-THz range. Our novel source outperforms laser-oscillator-driven emitters such as ZnTe(110) crystals in terms of bandwidth, terahertz-field amplitude, flexibility, scalability and cost., Comment: 18 pages, 10 figures

Thin film YIG (Y$_3$Fe$_5$O$_{12}$) is a prototypical material for experiments on thermally generated pure spin currents and the spin Seebeck effect. The 3-omega method is an established technique to measure the cross-plane thermal conductance of thin films, but can not be used in YIG/GGG (Ga$_3$Gd$_5$O$_{12}$) systems in its standard form. We use two-dimensional modeling of heat transport and introduce a technique based on Bayesian statistics to evaluate measurement data taken from the 3-omega method. Our analysis method allows us to study materials systems that have not been accessible with the conventionally used 3-omega analysis. Temperature dependent thermal conductance data of thin film YIG are of major importance for experiments in the field of spin-caloritronics. Here we show data between room temperature and 10 K for films covering a wide thickness range as well as the magnetic field effect on the thermal conductance between 10 K and 50 K.

The magnitude of the spin polarization at the Fermi level of ferromagnetic materials at room temperature is a key property for spintronics. Investigating the Heusler compound Co$_2$MnSi a value of 93$\%$ for the spin polarization has been observed at room temperature, where the high spin polarization is related to a stable surface resonance in the majority band extending deep into the bulk. In particular, we identified in our spectroscopical analysis that this surface resonance is embedded in the bulk continuum with a strong coupling to the majority bulk states. The resonance behaves very bulk-like, as it extends over the first six atomic layers of the corresponding (001)-surface. Our study includes experimental investigations, where the bulk electronic structure as well as surface-related features have been investigated using spin-resolved photoelectron spectroscopy (SR-UPS) and for a larger probing depth spin-integrated high energy x-ray photoemission spectroscopy (HAXPES). The results are interpreted in comparison with first-principles band structure and photoemission calculations which consider all relativistic, surface and high-energy effects properly., Comment: 9 pages, 8 figures, Heusler alloy, electronic structure and photoemission

We report current-induced domain wall motion (CIDWM) in Ta\Co20Fe60B20\MgO nanowires. Domain walls are observed to move against the electron flow when no magnetic field is applied, while a field along the nanowires strongly affects the domain wall motion direction and velocity. A symmetric effect is observed for up-down and down-up domain walls. This indicates the presence of right-handed domain walls, due to a Dzyaloshinskii-Moriya interaction (DMI) with a DMI coefficient D=+0.06 mJ/m2. The positive DMI coefficient is interpreted to be a consequence of boron diffusion into the tantalum buffer layer during annealing. In a Pt\Co68Fe22B10\MgO nanowire CIDWM along the electron flow was observed, corroborating this interpretation. The experimental results are compared to 1D-model simulations including the effects of pinning. This advanced modelling allows us to reproduce the experiment outcomes and reliably extract a spin-Hall angle {\theta}SH=-0.11 for Ta in the nanowires, showing the importance of an analysis that goes beyond the currently used model for perfect nanowires., Comment: 22 pages, 5 figures

We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We deduce that an effective torque arising from spin-orbit effects in the multilayer drives the switching mechanism. While the generation of a component of the magnetization along the current direction is crucial for the switching to occur, we observe that even without a longitudinal field thermally generated magnetization fluctuations can lead to switching. Analysis using a generalized N\'eel-Brown model enables key parameters of the thermally induced spin-orbit torques switching process to be estimated, such as the attempt frequency and the effective energy barrier., Comment: 8 pages, 3 figures

The dependence of the spin-pumping effect on the yttrium iron garnet (Y3Fe5O12, YIG) thickness detected by the inverse spin Hall effect (ISHE) has been investigated quantitatively. Due to the spin-pumping effect driven by the magnetization precession in the ferrimagnetic insulator YIG film a spin-polarized electron current is injected into the Pt layer. This spin current is transformed into electrical charge current by means of the ISHE. An increase of the ISHE-voltage with increasing film thickness is observed and compared to the theoretically expected behavior. The effective damping parameter of the YIG/Pt samples is found to be enhanced with decreasing YIG film thickness. The investigated samples exhibit a spin mixing conductance of g=(7.43 \pm 0.36) \times 10^{18} m^{-2} and a spin Hall angle of theta_{ISHE} = 0.009 \pm 0.0008. Furthermore, the influence of nonlinear effects on the generated voltage and on the Gilbert damping parameter at high excitation powers are revealed. It is shown that for small YIG film thicknesses a broadening of the linewidth due to nonlinear effects at high excitation powers is suppressed because of a lack of nonlinear multi-magnon scattering channels. We have found that the variation of the spin-pumping efficiency for thick YIG samples exhibiting pronounced nonlinear effects is much smaller than the nonlinear enhancement of the damping.

We determine experimentally the spin structure of half-metallic Co2FeAl0.4Si0.6 Heusler alloy elements using magnetic microscopy. Following magnetic saturation, the dominant magnetic states consist of quasi-uniform configurations, where a strong influence from the magnetocrystalline anisotropy is visible. Heating experiments show the stability of the spin configuration of domain walls in confined geometries up to 800 K. The switching temperature for the transition from transverse to vortex walls in ring elements is found to increase with ring width, an effect attributed to structural changes and consequent changes in magnetic anisotropy, which start to occur in the narrower elements at lower temperatures., Comment: 4 pages, 4 figures

We study the depinning of domain walls by pure diffusive spin currents in a nonlocal spin valve structure based on two ferromagnetic permalloy elements with copper as the nonmagnetic spin conduit. The injected spin current is absorbed by the second permalloy structure with a domain wall and from the dependence of the wall depinning field on the spin current density we find an efficiency of 6*10^{-14}T/(A/m^2), which is more than an order of magnitude larger than for conventional current induced domain wall motion. Theoretically we reproduce this high efficiency, which arises from the surface torques exerted by the absorbed spin current that lead to efficient depinning., Comment: 11 pages, 3 figures, accepted for publication in Phys. Rev. Lett