1. An X-band Schottky diode mixer in SiGe technology with tunable Marchand balun
- Author
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Rasmus S. Michaelsen, Kjeld M. Tamborg, Tom K. Johansen, Lei Yan, and Vitaliy Zhurbenko
- Subjects
Sige bicmos process ,Materials science ,X band ,02 engineering and technology ,Tuning ,Double balanced mixers ,Power level ,Circuit design and applications ,Balun ,Center frequency ,Mixers (machinery) ,Integrated circuit manufacture ,0202 electrical engineering, electronic engineering, information engineering ,Schottky diode mixers ,Phase comparators ,Electrical and Electronic Engineering ,Silicon alloys ,Si-based devices and IC technologies ,business.industry ,dBm ,Bandwidth (signal processing) ,Electrical engineering ,Schottky diode ,020206 networking & telecommunications ,1dB compression point ,Reconfigurable hardware ,Semiconducting silicon ,Bicmos process ,Schottky barrier diodes ,Optoelectronics ,Local oscillators ,business ,IC technology - Abstract
In this paper, we propose a double balanced mixer with a tunable Marchand balun. The circuit is designed in a SiGe BiCMOS process using Schottky diodes. The tunability of the Marchand balun is used to enhance critical parameters for double balanced mixers. The local oscillator-IF isolation can be changed from –51 to –60.5 dB by tuning. Similarly, the IIP2can be improved from 41.3 to 48.7 dBm at 11 GHz, while the input referred 1-dB compression point is kept constant at 8 dBm. The tuning have no influence on conversion loss, which remains at 8.8 dB at a LO power level of 11 dBm at the center frequency of 11 GHz. The mixer has a 3 dB bandwidth from 8 to 13 GHz, covering the entire X-band. The full mixer has a size of 2050 μm × 1000 μm.
- Published
- 2016