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A key issue associated with advanced lithography techniques for semiconductor-device manufacturing is the reduction in the sidewall roughness of photoresist line patterns, known as line-edge roughness (LER). We have developed a technique for measuring the sidewall of the resist pattern using atomic force microscopy (AFM) that enables three-dimensional (3D), high-resolution, low-noise, and nondestructive measurements. Conventional LER measurement technology using scanning electron microscopy (SEM) causes shrinkage of the resist pattern due to electron-beam (EB) exposure, whereas our new AFM technique can in principle avoid EB-induced shrinkage. This AFM technology is capable of 3D measurements because it employs a tip-tilting mechanism that enables the sharp AFM tip to scan the vertical sidewalls, which is difficult for a conventional AFM technique. In addition, laser interferometers are equipped for the measurement of the AFM tip displacement, which yields high-resolution, high-accuracy, and low-noise results. This technology overcomes issues such as low resolution, noise, and destructive measurements that afflict conventional SEM measurements. In addition, it enables observations and quantitative analyses of the 3D sidewall roughness. For example, in the present experiment, we observed that grain shapes (several tens of nm in size) were formed randomly on the resist sidewall and that there were almost no footing shapes. By analyzing the sidewall profiles with a height resolution of 1 nm, we obtain the roughness (self-affine fractal) parameters at each height. This AFM-based resist sidewall measurement technique can, thus, provide important insights into resist patterning and related process technologies for next-generation semiconductor-device manufacturing. [ABSTRACT FROM AUTHOR]

Background: Conventional scanning electron microscopy (SEM) that is used for 2D top-view metrology, a classical line edge roughness (LER) measurement technique, is incapable of measuring 3D structures of a nanoscale line pattern. For LER measurements, SEM measurement generates a single line-edge profile for the 3D sidewall roughness, although the line-edge profile differs at each height in the 3D sidewall. Aim: To develop an evaluation method of SEM-based LER measurement techniques and to verify how the 3D sidewall shape is reflected in the SEM's 2D result. Approach: Direct comparison by measuring an identical location of a line pattern by SEM and an atomic force microscopy (AFM) with the tip-tilting technique that is capable of measuring the 3D sidewall. The line pattern has vertical stripes on the sidewall due to its fabrication process. Measured line edge profiles were analyzed using power spectral density, height-height correlation function, and autocorrelation function. Results: Line edge profiles measured by SEM and AFM were well matched except for noise level. Frequency and scaling analyses showed that SEM profile contained high noise and had lost a property of self-affine fractals in contrast to AFM. Conclusions: In the case of the line pattern with vertical stripes on the sidewall, SEM profile is generally consistent with 3D sidewall shape. The AFM-based LER measurement technique is useful as LER reference metrology to evaluate other LER measurement techniques. [ABSTRACT FROM AUTHOR]