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Boron-doping characteristics in hydrogenated amorphous silicon-oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility. PACS Nos.: 68.55.Ln, 61.72.uf, 81.05.Gc, 81.15.Gh. Nous etudions les caracteristiques du dopage au bore de l'oxyde de silicium amorphe hydrogene (a-SiO:H) en contraste avec celles du silicium amorphe hydrogene (a-Si:H). Meme si l'efficacite de l'incorporation du bore montre pratiquement la meme valeur entre a-SiO:H et a-Si:H, le a-SiO:H de type p (ou p-a-SiO:H) montre une conductivite en obscurite plus petite par un ou deux ordres de grandeur compare au p-a-Si:H, et ce pour un large eventail du niveau de dopage. Nous trouvons que le p-a-SiO:H a une plus faible conductivite en obscurite que le p-a-Si:H, meme lorsque nous choisissons des echantillons qui ont la meme energie d'activation a partir d'une variete d'echantillons de depot avec recuit thermique. Sur la base de la difference d'energie d'Urbach entre l'intrinseque de haute qualite a-SiO:H et a-Si:H, nous concluons que l'origine de la faible conductivite en obscurite est due a une faible mobilite des trous. [Traduit par la Redaction], 1. Introduction Development of high quality wide-gap materials both for p layer [1-4] and buffer layer [5, 6] is one of the most important issues to improve the photovoltaic performance [...]

Boron-doping characteristics in hydrogenated amorphous silicon-oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility. [ABSTRACT FROM AUTHOR]

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