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We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit., Comment: 9 pages, 5 figures, accepted for publication in JATIS

X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise., Comment: 15 pages, 16 figures, accepted for publication in JATIS

The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well., Comment: 7 pages, 7 figures, accepted for publication in NIM A

The change in vortex ensemble in BaFe$_{2}$(As$_{0.67}$P$_{0.33}$)$_2$, an isovalently doped iron-based superconductor (IBS), is studied through global magnetization measurements and single vortex imaging before and after 6 MeV proton irradiation. The field dependence of the critical current density ($J_\mathrm{c}$) is analyzed through the strong pinning model, with which the pristine sample is consistent. After the irradiation, the $J_\mathrm{c}$ aberrates from the strong pinning field dependence of $B^{-5/8}$, and evolves to a weaker $B^{-1/3}$ dependence with an anomalous two-step behavior creating a cusp like feature. The cusp coincides with the field of the local minima in the normalized relaxation rate ($S$), manifested by increased pinning due to increased intervortex interactions followed by fast vortex dynamics caused by flux activation at higher fields. Furthermore, single vortex imaging reveals that while long-range triangular correlation of the Abrikosov vortex lattice is observed in pristine samples, irradiated samples exhibit a highly disordered glassy vortex state which is more densely packed with increased pinning force. These artificial defects incorporated via proton irradiation have the same pinning effect as Co doping which not only shifts the pinning force to a higher degree but also broadens its distribution, in contrast to P doping which only broadens the pinning distribution without inducing a shift. All in all, through this investigation, we provide a systematic understanding of the pinning behavior in BaFe$_{2}$(As$_{0.67}$P$_{0.33}$)$_2$ through carefully controlling the defects in the system., Comment: 11 pages

We report the study on superconducting pairing mechanism of FeSe via the pair-breaking effects induced by H$^+$-irradiation combined with low-temperature specific heat measurements. A multi-gap structure with nodes or gap minima is suggested in a clean FeSe by the specific heat results. The suppression of critical temperature $T_c$ with increasing the defect density manifests a two-step behavior. When the increase in the residual resistivity is small, $\Delta\rho_0$ $<$ $\sim$4.5 $\mu\Omega$cm, $T_c$ is gradually suppressed with increasing the density of scattering centers, suggesting the presence of symmetry-unprotected nodes or gap minima. However, for $\Delta\rho_0$ $>$ $\sim$4.5 $\mu\Omega$cm, $T_c$ is almost independent of the scattering, which indicates that the nodes or gap minima are lifted and the order parameter becomes almost isotropic without sign change. Thus, the superconductivity in FeSe is found to be realized in symmetry-unprotected nodal or highly anisotropic $s_{++}$ state., Comment: 6 pages, 3 figures

In this report, we comprehensively study the effect of H$^+$ irradiation on the critical current density, $J_c$, and vortex pinning in FeSe single crystal. It is found that the value of $J_c$ for FeSe is enhanced more than twice after 3-MeV H$^+$ irradiation. The scaling analyses of the vortex pinning force based on the Dew-Hughes model reveal that the H$^+$ irradiation successfully introduce point pinning centers into the crystal. We also find that the vortex creep rates are strongly suppressed after irradiation. Detailed analyses of the critical current dependent pinning energy based on the collective creep theory and extend Maley's method show that the H$^+$ irradiation enhances the value of $J_c$ before the flux creep, and also reduces the size of flux bundle, which will further reduce the field dependence of $J_c$ due to vortex motion., Comment: 4 pages, 4figures

We present the single event effect (SEE) tolerance of a mixed-signal application-specific integrated circuit (ASIC) developed for a charge-coupled device camera onboard a future X-ray astronomical mission. We adopted proton and heavy ion beams at HIMAC/NIRS in Japan. The particles with high linear energy transfer (LET) of 57.9 MeV cm^{2}/mg is used to measure the single event latch-up (SEL) tolerance, which results in a sufficiently low cross-section of sigma_{SEL} < 4.2x10^{-11} cm^{2}/(IonxASIC). The single event upset (SEU) tolerance is estimated with various kinds of species with wide range of energy. Taking into account that a part of the protons creates recoiled heavy ions that has higher LET than that of the incident protons, we derived the probability of SEU event as a function of LET. Then the SEE event rate in a low-earth orbit is estimated considering a simulation result of LET spectrum. SEL rate is below once per 49 years, which satisfies the required latch-up tolerance. The upper limit of the SEU rate is derived to be 1.3x10^{-3}events/sec. Although the SEU events cannot be distinguished from the signals of X-ray photons from astronomical objects, the derived SEU rate is below 1.3% of expected non-X-ray background rate of the detector and hence these events should not be a major component of the instrumental background., Comment: 6 pages, 5 figures, in press. Nuclear Instruments and Methods in Physics Research Section A, 2013

The effect of proton irradiation in Ba(Fe0.93Co0.07)2As2 single crystals is reported. We analyze temperature dependence of current density and normalized flux relaxation rate in the framework of collective creep model. Glassy exponent and barrier height for flux creep are directly determined by Maley's method. Our model functions for barrier height and critical current density in the absence of flux creep are explained by the superposition of \deltaTc- and \deltal-pinning. We also approach true critical current density by means of generalized inversion scheme, and the obtained result is in reasonable agreement with our model function. Proton irradiation effect on temperature dependence of current density and normalized relaxation rate can be summarized as doubling of barrier height at the beginning of flux creep., Comment: 6 pages, 4 figures. To be published in Phys. Rev. B

We report on the performance of an analog application-specific integrated circuit (ASIC) developed aiming for the front-end electronics of the X-ray CCDcamera system onboard the next X-ray astronomical satellite, ASTRO-H. It has four identical channels that simultaneously process the CCD signals. Distinctive capability of analog-to-digital conversion enables us to construct a CCD camera body that outputs only digital signals. As the result of the front-end electronics test, it works properly with low input noise of =<30 uV at the pixel rate below 100 kHz. The power consumption is sufficiently low of about 150 mW/chip. The input signal range of 720 mV covers the effective energy range of the typical X-ray photon counting CCD (up to 20 keV). The integrated non-linearity is 0.2% that is similar as those of the conventional CCDs in orbit. We also performed a radiation tolerance test against the total ionizing dose (TID) effect and the single event effect. The irradiation test using 60Co and proton beam showed that the ASIC has the sufficient tolerance against TID up to 200 krad, which absolutely exceeds the expected amount of dose during the period of operating in a low-inclination low-earth orbit. The irradiation of Fe ions with the fluence of 5.2x10^8 Ion/cm2 resulted in no single event latchup (SEL), although there were some possible single event upsets. The threshold against SEL is higher than 1.68 MeV cm^2/mg, which is sufficiently high enough that the SEL event should not be one of major causes of instrument downtime in orbit., Comment: 16 pages, 6 figures

We have developed radiation detectors using the new synthetic diamonds. The diamond detector has an advantage for observations of "low/medium" energy gamma rays as a Compton telescope. The primary advantage of the diamond detector can reduce the photoelectric effect in the low energy range, which is background noise for tracking of the Compton recoil electron. A concept of the Diamond Compton Telescope (DCT) consists of position sensitive layers of diamond-striped detector and calorimeter layer of CdTe detector. The key part of the DCT is diamond-striped detectors with a higher positional resolution and a wider energy range from 10 keV to 10 MeV. However, the diamond-striped detector is under development. We describe the performance of prototype diamond detector and the design of a possible DCT evaluated by Monte Carlo simulations., Comment: 4 pages, 8 figures, Accepted for publication in Astrophysics and Space Science, proceeding of "The Multi-Messenger Approach to High-Energy Gamma-Ray Sources", Barcelona, July 4-7, 2006