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Despite constituting a smaller fraction of the qubits electromagnetic mode, surfaces and interfaces can exert significant influence as sources of high-loss tangents, which brings forward the need to reveal properties of these extended defects and identify routes to their control. Here, we examine the structure and composition of the metal-substrate interfacial layer that exists in Ta/sapphire-based superconducting films. Synchrotron-based X-ray reflectivity measurements of Ta films, commonly used in these qubits, reveal an unexplored interface layer at the metal-substrate interface. Scanning transmission electron microscopy and core-level electron energy loss spectroscopy identified an approximately 0.65 \ \text{nm} \pm 0.05 \ \text{nm} thick intermixing layer at the metal-substrate interface containing Al, O, and Ta atoms. Density functional theory (DFT) modeling reveals that the structure and properties of the Ta/sapphire heterojunctions are determined by the oxygen content on the sapphire surface prior to Ta deposition, as discussed for the limiting cases of Ta films on the O-rich versus Al-rich Al2O3 (0001) surface. By using a multimodal approach, integrating various material characterization techniques and DFT modeling, we have gained deeper insights into the interface layer between the metal and substrate. This intermixing at the metal-substrate interface influences their thermodynamic stability and electronic behavior, which may affect qubit performance.

The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems (TLSs) in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. We find that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, suggesting total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide TLS loss in superconducting qubits.

The electronic origin of the structural transition in 1T-VSe$_2$ is re-evaluated through an extensive angle-resolved photoemission spectroscopy experiment. The components of the band structure, missing in previous reports, are revealed. Earlier observations, shown to be temperature independent and therefore not correlated with the phase transition, are explained in terms of the increased complexity of the band structure close to the Fermi level. Only the overall size of the Fermi surface is found to be positively correlated with the phase transition at 110 K. These observations, quite distant from the charge density wave scenario commonly considered for 1T-VSe$_2$, bring fresh perspectives toward the correct description of structural transitions in dichalcogenides materials., Comment: 7 pages, 4 figures

The natural van der Waals superlattice MnBi2Te4-(Bi2Te3)m provides an optimal platform to combine topology and magnetism in one system with minimal structural disorder. Here, we show that this system can harbor both ferromagnetic (FM) and antiferromagnetic (AFM) orders and that these magnetic orders can be controlled in two different ways by either varying the Mn-Mn distance while keeping the Bi2Te3/MnBi2Te4 ratio constant or vice versa. We achieve this by creating atomically engineered sandwich structures composed of Bi2Te3 and MnBi2Te4 layers. We show that the AFM order is exclusively determined by the Mn-Mn distance whereas the FM order depends only on the overall Bi2Te3/MnBi2Te4 ratio regardless of the distance between the MnBi2Te4 layers. Our results shed light on the origins of the AFM and FM orders and provide insights into how to manipulate magnetic orders not only for the MnBi2Te4-Bi2Te3 system but also for other magneto-topological materials., Comment: 25 pages, 5 figures, accepted to Nano Letters

Low-energy electron diffraction (LEED) is a widely used technique in surface-science. Yet, it is rarely used to its full potential. The quantitative information about the surface structure, contained in the modulation of the intensities of the diffracted beams as a function of incident electron energy, LEED I(V), is underutilized. To acquire these data, minor adjustments would be required in most experimental setups, but existing analysis software is cumbersome to use. ViPErLEED (Vienna package for Erlangen LEED) lowers these barriers, introducing a combined solution for data acquisition, extraction, and computational analysis. These parts are discussed in three separate publications. Here, the focus is on the computational part of ViPErLEED, which performs automated LEED-I(V) calculations and structural optimization. Minimal user input is required, and the functionality is significantly enhanced compared to existing solutions. Computation is performed by embedding the Erlangen tensor-LEED package (TensErLEED). ViPErLEED manages parallelization, monitors convergence, and processes input and output. This makes LEED I(V) more accessible to new users while minimizing the potential for errors and the manual labor. Added functionality includes structure-dependent defaults, automatic detection of bulk and surface symmetries and their relationship, automated symmetry-preserving search procedures, adjustments to the TensErLEED code to handle larger systems, as well as parallelization and optimization. Modern file formats are used as input and output, and there is a direct interface to the Atomic Simulation Environment (ASE) package. The software is implemented primarily in Python (version >=3.7) and provided as an open-source package (GNU GPLv3 or later). A structure determination of the $\alpha$-Fe2O3(1-102)-(1x1) surface is presented as an example for the application of the software.

As part of the ViPErLEED project (Vienna package for Erlangen LEED, low-energy electron diffraction), computer programs have been developed for facile and user-friendly data extraction from movies of LEED images. The programs make use of some concepts from astronomical image processing and analysis. As a first step, flat-field and dark-frame corrections reduce the effects of inhomogeneities of the camera and screen. In a second step, for identifying all diffraction maxima ("spots"), it is sufficient to manually mark and label a single spot or very few spots. Then the program can automatically identify all other spots and determine the distortions of the image. This forms the basis for automatic spot tracking (following the "beams" as they move across the LEED screen) and intensity measurement. Even for complex structures with hundreds to a few thousand diffraction beams, this step takes less than a minute. The package also includes a program for further processing of these I(V) curves (averaging of equivalent beams, manual and/or automatic selection, smoothing) as well as several utilities. The software is implemented as a set of plugins for the public-domain image processing program ImageJ and provided as an open-source package.

In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe]m[Bi2Te3]n, which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi2Te3]n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe-nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 +/- 0.04 A and 4.39 +/- 0.04 A, respectively-can be selectively grown on c-plane Al2O3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In2Se3 buffer layer, despite its lattice constant (4.02 A) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi2Te3, sharing the same lattice constant (4.39 A) with the ZB-WZ phase, fosters the NC phase. These discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) capping layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg capping, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the capping layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.

The temperature-dependent behavior of magnetic domains plays an essential role in the magnetic properties of materials, leading to widespread applications. However, experimental methods to access the three-dimensional (3D) magnetic domain structures are very limited, especially for antiferromagnets. Over the past decades, the spin-orbit Mott insulator iridate $Sr_2IrO_4$ has attracted particular attention because of its interesting magnetic structure and analogy to superconducting cuprates. Here, we apply resonant x-ray magnetic Bragg coherent diffraction imaging to track the real-space 3D evolution of antiferromagnetic ordering inside a $Sr_2IrO_4$ single crystal as a function of temperature, finding that the antiferromagnetic domain shows anisotropic changes. The anisotropy of the domain shape reveals the underlying anisotropy of the antiferromagnetic coupling strength within $Sr_2IrO_4$. These results demonstrate the high potential significance of 3D domain imaging in magnetism research.

The performance of superconducting quantum circuits for quantum computing has advanced tremendously in recent decades; however, a comprehensive understanding of relaxation mechanisms does not yet exist. In this work, we utilize a multimode approach to characterizing energy losses in superconducting quantum circuits, with the goals of predicting device performance and improving coherence through materials, process, and circuit design optimization. Using this approach, we measure significant reductions in surface and bulk dielectric losses by employing a tantalum-based materials platform and annealed sapphire substrates. With this knowledge we predict and experimentally verify the relaxation times of aluminum- and tantalum-based transmon qubits. We additionally optimize device geometry to maximize coherence within a coaxial tunnel architecture, and realize on-chip quantum memories with single-photon Ramsey times of 2.0$-$2.7 ms, limited by their energy relaxation times of 1.0$-$1.4 ms. To our knowledge this is the highest coherence achieved in an on-chip quantum memory, and demonstrates an advancement towards a more modular and compact coaxial circuit architecture for bosonic qubits with reproducibly high coherence., Comment: Updated submission 23/09/14: corrected grant number under Acknowledgements

We study the interplay of lattice, spin and orbital degrees of freedom in a two-dimensional model system: a flat square lattice of Te atoms on a Au(100) surface. The atomic structure of the Te monolayer is determined by scanning tunneling microscopy (STM) and quantitative low-energy electron diffraction (LEED-IV). Using spin- and angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT), we observe a Te-Au interface state with highly anisotropic Rashba-type spin-orbit splitting at the X point of the Brillouin zone. Based on a profound symmetry and tight-binding analysis, we show how in-plane square lattice symmetry and broken inversion symmetry at the Te-Au interface together enforce a remarkably anisotropic orbital Rashba effect which strongly modulates the spin splitting., Comment: 7 pages, 5 figures

Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. We find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thin-films significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as a III-VI two-dimensional semiconductor (2D) with a combination of favorable attributes from III-V semiconductors as well as van der Waals 2D transition metal dichalcogenides. Nevertheless, the large-area synthesis of phase-pure 2D InSe remains unattained due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the first polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical deposition (MOCVD) over 2 inch diameter sapphire wafers. We achieve thickness-controlled, layer-by-layer epitaxial growth of InSe on c-plane sapphire via dynamic pulse control of Se/In flux ratio. The layer-by-layer growth allows thickness control over wafer scale with tunable optical properties comparable to bulk crystals. Finally, the gate-tunable electrical transport suggests that MOCVD-grown InSe could be a potential channel material for back-end-of-line integration in logic transistors with field-effect mobility comparable to single-crystalline flakes., Comment: MS + SI

A non-perturbative framework is provided to connect QCD with nuclear phenomenology in the intermediate and high density regime. Using QCD Sum Rules, in-medium scalar and vector self-energies of nucleons are calculated as functions of the density of an infinite nuclear medium. The self-energies are used in the relativistic mean field theory lagrangian of a high-density nuclear medium to find the binding energy of in-medium nucleons and the value of light quark condensate, $\langle \bar{q} q \rangle_{\rm{vac}} = -~(0.288 ~\rm{GeV})^3$, in the Borel-improved resummation scheme. The critical mass of an ideal neutron star is obtained by coupling a uniform saturation energy density of cold, dense nuclear matter to Einstein equation in hydrostatic equilibrium. Since it is less likely for a neutron star core to avoid deconfinement and enter the rigid vector repulsion phase where the speed of sound can smoothly approach from conformal to causal limit, a gap should exist in the stellar mass spectrum, $[3.48M_\odot, 5.47M_\odot]$, where it would be rare to find any isolated, cold, non-rotating neutron star or a black hole., Comment: 3 Figures

Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.

Transparent contact interfaces in superconductor-graphene hybrid systems are critical for realizing superconducting quantum applications. Here, we examine the effect of the edge-contact fabrication process on the transparency of the superconducting aluminum-graphene junction. We show significant improvement in the transparency of our superconductor-graphene junctions by promoting the chemical component of the edge contact etch process. Our results compare favorably with state-of-the-art graphene Josephson junctions. The findings of our study contribute to advancing the fabrication knowledge of edge-contacted superconductor-graphene junctions.

The Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction mediates collinear magnetic interactions via the conduction electrons of a non-magnetic spacer, resulting in a ferro- or antiferromagnetic magnetization in magnetic multilayers. The resulting spin-polarized charge transport effects have found numerous applications. Recently it has been discovered that heavy non-magnetic spacers are able to mediate an indirect magnetic coupling that is non-collinear and chiral. This Dzyaloshinskii-Moriya-enhanced RKKY (DME-RKKY) interaction causes the emergence of a variety of interesting magnetic structures, such as skyrmions and spin spirals. Applications using these magnetic quasi-particles require a thorough understanding and fine-tuning of the balance between the Dzyaloshinskii-Moriya interaction and other magnetic interactions, e.g., the exchange interaction and magnetic anisotropy contributions. Here, we show by spin-polarized scanning tunneling microscopy that the spin structure of manganese oxide chains on Ir(001) can reproducibly be switched from chiral to collinear antiferromagnetic interchain interactions by increasing the oxidation state of MnO$_2$ while the reverse process can be induced by thermal reduction. The underlying structural change is revealed by low-energy electron diffraction intensity data (LEED-IV) analysis. Density functional theory calculations suggest that the magnetic transition may be caused by a significant increase of the Heisenberg exchange upon oxidation., Comment: 6 pages, 3 figures

The deluge of sensors and data generating devices has driven a paradigm shift in modern computing from arithmetic-logic centric to data-centric processing. Data-centric processing require innovations at device level to enable novel compute-in-memory (CIM) operations. A key challenge in construction of CIM architectures is the conflicting trade-off between the performance and their flexibility for various essential data operations. Here, we present a transistor-free CIM architecture that permits storage, search and neural network operations on sub-50nm thick Aluminum Scandium Nitride ferroelectric diodes (FeDs). Our circuit designs and devices can be directly integrated on top of Silicon microprocessors in a scalable process. By leveraging the field-programmability, non-volatility and non-linearity of FeDs, search operations are demonstrated with a cell footprint < 0.12 um2 when projected onto 45-nm node technology. We further demonstrate neural network operations with 4-bit operation using FeDs. Our results highlight FeDs as candidates for efficient and multifunctional CIM platforms.

We present a so far undetected submonolayer phase of copper telluride on Cu(111) with $\left(5 \times \sqrt{3}\right)_{\text{rect}}$ periodicity and coverage of 0.40 ML Tellurium (Te), which can be grown with perfect long-range order. It is structurally characterized by a combination of quantitative low-energy electron diffraction (LEED-IV), scanning tunneling microscopy (STM), and density functional theory (DFT). We find that Te induces the formation of four atom wide linear troughs within the Cu(111) surface filled up by two Te atoms per unit cell. Additionally, the interspace between the troughs is decorated by Cu$_2$Te$_2$ ad-chains sitting at hcp sites. All Te atoms exhibit the same local sixfold coordination: They occupy threefold hollow sites of the substrate and are one-sided attached to another three Cu atoms. The presented structural model is verified by a LEED-IV analysis with Pendry R-factor of R = 0.174 and quantitative agreement of structural parameters with DFT predictions. It also has by far the lowest energy of all models tested by DFT and simulated STM images agree perfectly with experiment. It turns out that the new $\left(5 \times \sqrt{3}\right)_{\text{rect}}$ phase is the most dense surface telluride phase possible on Cu(111) before bulk-like copper telluride starts to growth.

Revealing the predominant driving force behind symmetry breaking in correlated materials is sometimes a formidable task due to the intertwined nature of different degrees of freedom. This is the case for La2-xSrxNiO4+{\delta} in which coupled incommensurate charge and spin stripes form at low temperatures. Here, we use resonant X-ray photon correlation spectroscopy to study the temporal stability and domain memory of the charge and spin stripes in La2-xSrxNiO4+{\delta}. Although spin stripes are more spatially correlated, charge stripes maintain a better temporal stability against temperature change. More intriguingly, charge order shows robust domain memory with thermal cycling up to 250 K, far above the ordering temperature. These results demonstrate the pinning of charge stripes to the lattice and that charge condensation is the predominant factor in the formation of stripe orders in nickelates., Comment: 7 pages; accepted in Physical Review Letters

The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despite numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS$_2$ interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS$_2$ induces a large strain of ~5% in the MoS$_2$ which, coupled with charge transfer, leads to degenerate doping of the MoS$_2$ underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS$_2$-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS$_2$/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors., Comment: 6 figures + supplement

Hyperdoping with gallium (Ga) has been established as a route to observe superconductivity in silicon (Si). The relatively large critical temperatures (T$_{\rm c}$) and magnetic fields (B$_{\rm c}$) make this phase attractive for cryogenic circuit applications, particularly for scalable hybrid superconductor--semiconductor platforms. However, the robustness of Si:Ga superconductivity at millikelvin temperatures is yet to be evaluated. Here, we report the presence of a reentrant resistive transition below T$_{\rm c}$ for Si:Ga whose strength strongly depends on the distribution of the Ga clusters that precipitate in the implanted Si after annealing. By monitoring the reentrant resistance over a wide parameter space of implantation energies and fluences, we determine conditions that significantly improve the coherent coupling of Ga clusters, therefore, eliminating the reentrant transition even at temperatures as low as 20~mK.

The surface atomic and electronic structure after deposition of 1/3 monolayer (ML) Te on Cu(111) was determined using a combination of low-energy electron diffraction (LEED), scanning tunneling microscopy and spectroscopy (STM/STS), angle-resolved single and two-photon photoelectron spectroscopy (ARPES /AR-2PPE) and density functional theory (DFT) calculations. Contrary to the current state in literature Te does not create a two-dimensional surface alloy but forms Cu$_2$Te$_2$ adsorbate chains in a $\left(2\sqrt{3} \times \sqrt{3}\right)\textrm{R30}^\circ$ superstructure. We establish this by a high-precision LEED-IV structural analysis with Pendry $R$ factor of $R = 0.099$ and corroborating DFT and STM results. The electronic structure of the surface phase is dominated by an anisotropic downward dispersing state at the Fermi energy $E_F$ and a more isotropic upward dispersing unoccupied state at $E-E_F = + 1.43\,\textrm{eV}$. Both states coexist with bulk states of the projected band structure and are therefore surface resonances.

By quantitative low-energy electron diffraction (LEED) we investigate the extensively studied commensurate charge density wave (CDW) phase of trigonal tantalum disulphide (1T-TaS$_2$), which develops at low temperatures with a $\left(\sqrt{13}\times\sqrt{13}\right)$R13.9{\deg} periodicity. A full-dynamical analysis of the energy dependence of diffraction spot intensities reveals the entire crystallographic surface structure, i.e. the detailed atomic positions within the outermost two trilayers consisting of 78 atoms as well as the CDW stacking. The analysis is based on an unusually large data set consisting of spectra for 128 inequivalent beams taken in the energy range 20-250 eV and an excellent fit quality expressed by a bestfit Pendry R-factor of R=0.110. The LEED intensity analysis reveals that the well-accepted model of star-of-David-shaped clusters of Ta atoms for the bulk structure also holds for the outermost two TaS$_2$ trilayers. Specifically, in both layers the clusters of Ta atoms contract laterally by up to 0.25 $\r{A}$ and also slightly rotate within the superstructure cell, causing respective distortions as well as heavy bucklings (up to 0.23 $\r{A}$) in the adjacent sulphur layers. Most importantly, our analysis finds that the CDWs of the 1$^{\text{st}}$ and 2$^{\text{nd}}$ trilayer are vertically aligned, while there is a lateral shift of two units of the basic hexagonal lattice (6.71 $\r{A}$) between the 2$^{\text{nd}}$ and 3$^{\text{rd}}$ trilayer. The results may contribute to a better understanding of the intricate electronic structure of the reference compound 1T-TaS$_2$ and guide the way to the analysis of complex structures in similar quantum materials., Comment: 18 pages, 13 figures

Previous efforts to directly write conductive metals have been narrowly focused on nanoparticle ink suspensions that require aggressive sintering (>200 {\deg}C) and result in low-density, small-grained agglomerates with electrical conductivities <25% of bulk metal. Here, we demonstrate aerosol jet printing of a reactive ink solution and characterize high-density (93%) printed silver traces having near-bulk conductivity and grain sizes greater than the electron mean free path, while only requiring a low-temperature (80 {\deg}C) treatment. We have developed a predictive electronic transport model which correlates the microstructure to the measured conductivity and identifies a strategy to approach the practical conductivity limit for printed metals. Our analysis of how grain boundaries and tortuosity contribute to electrical resistivity provides insight into the basic materials science that governs how an ink formulator or process developer might approach improving the conductivity. Transmission line measurements validate that electrical properties are preserved up to 20 GHz, which demonstrates the utility of this technique for printed RF components. This work reveals a new method of producing robust printed electronics that retain the advantages of rapid prototyping and three-dimensional fabrication while achieving the performance necessary for success within the aerospace and communications industries.

Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moir\'e patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron doping. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials., Comment: 25 pages, 5 figures

We study gravitational waves generated by bubble expansion created during the Cosmological Electroweak Phase Transition (EWPT). The energy radiated via gravitational waves is produced by the stress-energy tensor created by the magnetic field produced by bubble collisions during the EWPT, which occured about $10{-11}$ seconds after the Big Bang., Comment: 5 pages, 3 figures

The 2D layered Ruddlesden-Popper crystal structure can host a broad range of functionally important behaviors. Here we establish extraordinary configurational disorder in a two dimensional layered Ruddlesden-Popper (RP) structure using entropy stabilization assisted synthesis. A protype A2CuO4 RP cuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-site sublattice is designed and fabricated into epitaxial single crystal films using pulsed laser deposition. By comparing (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2CuO4 crystals grown under identical conditions but different substrates, it is found that heteroepitaxial strain plays an important role in crystal phase formation. When grown on a near lattice matched substrate, the high entropy oxide film features a T'-type RP structure with uniform A-site cation mixing and square-planar CuO4 units, however, growing under strong compressive strain results in a single crystal non-RP cubic phase consistent with a CuX2O4 spinel structure. These observations are made with a range of combined characterizations using X-ray diffraction, atomic-resolution scanning transmission electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray absorption spectroscopy measurements. Designing configurational complexity and moving between 2D layered RP and 3D cubic crystal structures in this class of cuprate materials opens many opportunities for new design strategies related to magnetoresistance, unconventional superconductivity, ferroelectricity, catalysis, and ion transport.

Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we perform measurements of transmon qubit relaxation times $T_1$ in parallel with spectroscopy and microscopy of the thin polycrystalline niobium films used in qubit fabrication. By comparing results for films deposited using three techniques, we reveal correlations between $T_1$ and grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Physical mechanisms connect these microscopic properties to residual surface resistance and $T_1$ through losses arising from the grain boundaries and from defects in the suboxides. Further, experiments show that the residual resistance ratio can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.

The Rashba effect is fundamental to the physics of two-dimensional electron systems and underlies a variety of spintronic phenomena. It has been proposed that the formation of Rashba-type spin splittings originates microscopically from the existence of orbital angular momentum (OAM) in the Bloch wave functions. Here, we present detailed experimental evidence for this OAM-based origin of the Rashba effect by angle-resolved photoemission (ARPES) and two-photon photoemission (2PPE) experiments for a monolayer AgTe on Ag(111). Using quantitative low-energy electron diffraction (LEED) analysis we determine the structural parameters and the stacking of the honeycomb overlayer with picometer precision. Based on an orbital-symmetry analysis in ARPES and supported by first-principles calculations, we unequivocally relate the presence and absence of Rashba-type spin splittings in different bands of AgTe to the existence of OAM.

Using the method of QCD Sum Rules we estimate the energy of lowest energy top quark meson state with a hybrid admixture. This new estimate uses the previous estimates of hybrid charmonium and upsilon states, but with the mass of the top quark mass being much greater than the charm and bottom quark masses. We discuss production of mixed hybrid top quark mesons and possible detection of the creation of the Quark-Gluon Plasma via Relativistic Heavy Ion Collisions., Comment: 8 pages, 4 figures

Recently an excess of electron neutrino, $\nu_e$, events in a MiniBooNE experiment has been reported. An attempt to explain this anamoly was made in a theoretical analysis by introducing a new light Higgs Boson. In the present work we use a new neutrino interaction Z bosons producing Dark Photons to estimate an excess of $\nu_\mu \rightarrow \nu_e$ events., Comment: 4 pages,2 figures