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INTPIX4NA is an integration-type silicon-on-insulator pixel detector. This detector has a 14.1 x 8.7 mm^2 sensitive area, 425,984 (832 column x 512 row matrix) pixels and the pixel size is 17 x 17 um^2. This detector was developed for residual stress measurement using X-rays (the cos alpha method). The performance of INTPIX4NA was tested with the synchrotron beamlines of the Photon Factory (KEK), and the following results were obtained. The modulation transfer function, the index of the spatial resolution, was more than 50% at the Nyquist frequency (29.4 cycle/mm). The energy resolution analyzed from the collected charge counts is 35.3%--46.2% at 5.415 keV, 21.7%--35.6% at 8 keV, and 15.7%--19.4% at 12 keV. The X-ray signal can be separated from the noise even at a low energy of 5.415 keV at room temperature (approximately 25--27 degree Celsius). The maximum frame rate at which the signal quality can be maintained is 153 fps in the current measurement system. These results satisfy the required performance in the air and at room temperature (approximately 25--27 degree Celsius) condition that is assumed for the environment of the residual stress measurement., Comment: Accepted for publication at JINST (2022/01/14 Typo correction ver.)

We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~\mu s}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~\mu m\phi}$ pinhole, and scanned the device with $6{\rm ~\mu m}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins., Comment: 12 pages, 9 figures, accepted for publication in Journal of Instrumentation

This paper reports on the demonstration of a high-rate energy measurement technique using a thin depletion layer silicon avalanche photodiode (Si-APD). A dedicated amplitude-to-time converter is developed to realize simultaneous energy and timing measurement in a high rate condition. The energy response of the system is systematically studied by using monochromatic X-ray beam with an incident energy ranging from 6 to 33 keV. The obtained energy spectra contain clear peaks and tail distributions. The peak fraction monotonously decreases as the incident photon energy increases. This phenomenon can be explained by considering the distribution of the energy deposit in silicon, which is investigated by using a Monte Carlo simulation.

We have measured the Hall-plateau width and the activation energy of the bilayer quantum Hall (BLQH) states at the Landau-level filling factor $\nu=1$ and 2 by tilting the sample and simultaneously changing the electron density in each quantum well. The phase transition between the commensurate and incommensurate states are confirmed at $\nu =1$ and discovered at $\nu =2$. In particular, three different $\nu =2$ BLQH states are identified; the compound state, the coherent commensurate state, and the coherent incommensurate state., Comment: 4 pages including 5 figures

The Hall-plateau width and the activation energy were measured in the bilayer quantum Hall state at filling factor \nu=2, 1 and 2/3, by changing the total electron density and the density ratio in the two quantum wells. Their behavior are remarkably different from one to another. The \nu=1 state is found stable over all measured range of the density difference, while the \nu=2/3$ state is stable only around the balanced point. The \nu=2 state, on the other hand, shows a phase transition between these two types of the states as the electron density is changed., Comment: 5 pages including figures, RevTeX

We have studied the fractional and integer quantum Hall (QH) effects in a high-mobility double-layer two-dimensional electron system. We have compared the "stability" of the QH state in balanced and unbalanced double quantum wells. The behavior of the n=1 QH state is found to be strikingly different from all others. It is anomalously stable, though all other states decay, as the electron density is made unbalanced between the two quantum wells. We interpret the peculiar features of the nu=1 state as the consequences of the interlayer quantum coherence developed spontaneously on the basis of the composite-boson picture., Comment: 5 pages, 6 figures