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This contribution studies the effect of ordered vacancy compounds (OVCs) on the minority carrier collection in wide-gap (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells. For this purpose, three samples with different ([Ag]+[Cu])/([In]+[Ga]) (I/III) values were processed: 1) a very off-stoichiometric absorber (I/III = 0.31), consisting of isolated chalcopyrite patches embedded in a major OVC bulk phase, 2) a moderately off-stoichiometric absorber (I/III = 0.77) with OVC patches at the front and back interfaces and 3) a close-stoichiometric absorber (I/III = 0.94) with only very few, isolated OVC patches. For each of these samples, synchrotron-based X-ray fluorescence (XRF) was measured on a nanoscale (55 nm resolution), while simultaneously recording the X-ray beam induced current (XBIC). The results, complemented by transmission electron microscopy and electron-beam induced current analyses, clearly indicate that the presence of the OVC phase reduces the carrier collection and thus the short-circuit current density of off-stoichiometric wide-gap ACIGS solar cells.

A key to solar cells with lower environmental impact is higher efficiency and reduced material usages. Bifacial solar cells may have a higher efficiency as light can enter from two directions and tandem solar cells may use a larger part of the incoming solar spectrum, increasing the efficiency. However, both these applications require transparent and conducting contacts. This thesis aimed to investigate how suitable the transparent conductive oxides aluminum doped zinc oxide (AZO) and indium doped tin oxide (ITO) are as contacts in bifacial CIGS cells or CIGS/Silicon tandem cells. The contacts must remain stable when CIGS is deposited on top of it, meaning that they have to endure first 500°C and then 600°C in combination with copper, indium, gallium and selenium vapours. A thin layer of AZO topped with ITO and pure ITO films of different thicknesses were deposited by RF- and DC-sputtering, varying the oxygen flow. Opto-electrical characterization showed that the transparency in the infrared was balanced against high conductivity due to a shift in the plasmon peak's position. No great difference was seen between pure ITO samples and AZO/ITO samples, so only the first where further processed. The ITO films were annealed to 500°C in the CIGS deposition chamber, exposed to selenium vapour. The films' sheet resistances dropped drastically, which was mainly attributed to activation of tin donors. ITO produced with low oxygen flows also appeared more crystalline according to x-ray diffraction measurements. Photon absorption in the ITO was used to estimate the current loss in bifacial and tandem applications and graphs with current loss and sheet resistance can be used to select an ITO deposition process. Commercial ITO was exposed to 100s of the CIGS deposition process but only during selenium and gallium vapour. A layer of gallium selenide could be identified on the surface, but the ITO appeared to remain stable. Sodium fluoride pre deposition treatment lowered the sampl