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En este artículo ofrecemos una reflexión en torno al impacto que tuvieron las exposiciones, que sirvieron para conmemorar, en el año de 2013, el nacimiento de dos instituciones emblemáticas en la ciudad de Campinas: la “Escola Estadual ‘Culto a la Ciencia’", primer Gimnasio republicano, fundada hace140 años y la “Escola Estadual ‘Carlos Gomes’", primera Escuela Normal de Campinas, inaugurada hace 110 años. Estas actividades estuvieron bajo la responsabilidad del “Grupo de Estudios y Pesquisas en Historia de la Educación, Cultura Escolar y Ciudadanía” (CIVILIS), de la Facultad de Educación de la Universidad de Campinas/UNICAMP, responsable de desarrollar diferentes proyectos museológicos, entre estos se encuentra el proyecto de preservación del patrimonio histórico de las primeras escuelas públicas de Campinas, São Paulo, Brasil. Con la exhibición de documentos escritos, iconográficos y materiales, tanto del mobiliario como de enseñanza, pertenecientes a las colecciones de estas dos instituciones centenarias logramos, por una parte, profundizar sobre el significado que los usuarios de la escuela otorgan a los objetos que fueron expuestos, así como, las diferentes formas de entender el diálogo entre la memoria, la historia y la identidad, que van más allá de los límites del inventario y la catalogación, para representar prácticas de otros tiempos.

A study involving 50 rehabilitation professionals, 264 rehabilitation clients, 90 adults with blindness, and 267 employers, identified factors that lead to or impede competitive job placements for clients of a state blindness rehabilitation agency. Also identified were services that employers felt would assist them in hiring or retaining clients. (Author/CR)

This discussion of theoretical perspectives on disability's economic aspects urges development of better measures of productive activity by persons with blindness in paid and unpaid work; considers other personal characteristics that may account for dependence, such as old age or illness; and suggests that some costs are created by social barriers, rather than by impairments themselves. (Author/DB)

A new study uses micro-Raman spectroscopy to investigate the frequencies and damping of the optical phonons A1(LO) and E2 of GaN and AlN in temperatures ranging from 85-760 K.

Two-stage rapid thermal annealing methods were used for low resistive p-type gallium nitride layers.

This article reports findings of a mail survey of 519 managers in blindness services on their preferences for management training seminars. Preferences vary somewhat according to management level; there is little or no variation by region, public versus private auspices, education versus rehabilitation, or time in present position. (Author/PB)

We have investigated the structural, optical, and vibrational properties of strained heteroepitaxial ZnO layers by high resolution x-ray diffraction, reflectivity, and Raman measurements. The ZnO layers were grown by metalorganic vapor phase epitaxy on sapphire substrates under varying growth conditions. A Poisson number of μ=0.303 and phonon deformation-potential parameters of a=-690 cm-1, b=-940 cm-1 for the high-energy E2 optical phonon mode have been determined. The shift of the excitonic resonances due to the strain in the layers agrees well with the experimentally determined Poisson ratio using the deformation-potentials D1–D4 determined by Wrzesinski and Fröhlich [Phys. Rev. B 56, 13087 (1997)]. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Gallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The temperature for healing of the implantation-induced defects was found to be 800 °C. Implanted gallium acts as donor with a donor binding energy E[sub D] of 53 meV, thus allowing the control of n-type doping in ZnO. From photoluminescence measurements of the donor-acceptor pair transition of a series of nitrogen-implanted ZnO samples we estimate the binding energy E[sub A] of the nitrogen acceptor between 163 and 196 meV. Electrical characterization of nitrogen-implanted samples shows a behavior ranging from low n-type to highly compensated. But no unambiguous and reproducible type conversion could be achieved. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]