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A change in the growth mode from Stranski–Krastanov one, which is characteristic of MOCVD grown GaN, to the laterally grown BGaN in the Volmer–Weber growth mode is described. This change in growth is evidenced by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images of BGaN grown on GaN at high temperatures. It is postulated on the basis of SIMS and XRD results that this change in growth is initiated by the transfer of boron atoms from gallium substitutional to interstitial. The proposed mechanism for the observed growth change is related to the generation of nitrogen interstitials and subsequent reactions with boron interstitials, which result in the formation of a BN layer at the growth front. The observed large change in the growth mode is due to a lattice mismatch between the grown BGaN and the atomic layer of BN and stays behind the change to the Volmer–Weber growth mode. The consequence of the Volmer–Weber growth mode is the textural layer of BGaN. The textural character of this material is associated with large voids between grown BGaN “plates”. These large voids are responsible for the termination of threading dislocations propagating in the c-direction. It is also postulated that the blocked threading dislocations from the GaN underlayer and laterally grown BGaN layers along the a-directions are responsible for the decrease in defect concentration within these layers.

For the first time, the Z1 and Z2 defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material, after switching off the optical trap-filling pulse, either the one-electron or the two-electron thermally stimulated emission from these defects is observed at temperatures 300–400 K. It is found that the former corresponds to the Z10/+ and Z20/+ transitions with the activation energies of 514 and 432 meV, respectively, and the latter is associated with the Z1−/+ and Z2−/+ transitions with the activation energies of 592 meV and 650 meV, respectively. The Z1 and Z2 defect concentrations are found to increase from 2.1 × 1013 to 2.2 × 1014 cm−3 and from 1.2 × 1013 to 2.7 × 1014 cm−3, respectively, after the heat treatment of HPSI 4H-SiC samples at 1400 °C for 3 h in Ar ambience. Using the electrical trap-filling pulse, only the thermal two-electron emission from each defect was observed in the epitaxial 4H-SiC through Laplace-transform deep level transient spectroscopy (LDLTS). The activation energies for this process from the Z1 and Z2 defects are 587 and 645 meV, respectively, and the defect concentrations are found to be 6.03 × 1011 and 2.64 × 1012 cm−3, respectively. It is postulated that the Z1 and Z2 defects are the nearest-neighbor divacancies involving the carbon and silicon vacancies located at mixed, hexagonal (h), and quasi-cubic (k) lattice sites.