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48 results on '"Kim Hyoung Joon"'

3. Computerized Bone Age Assessment Using DCT and LDA

Author

Kim, Hyoung-Joon, Kim, Whoi-Yul, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Rangan, C. Pandu, editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Gagalowicz, André, editor, and Philips, Wilfried, editor

Published
2007
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4. Facial Feature Point Extraction Using the Adaptive Mean Shape in Active Shape Model

Author

Kim, Hyun-Chul, Kim, Hyoung-Joon, Hwang, Wonjun, Kee, Seok-Cheol, Kim, Whoi-Yul, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Rangan, C. Pandu, editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Doug, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Gagalowicz, André, editor, and Philips, Wilfried, editor

Published
2007
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5. Contrast Enhancement Using Adaptively Modified Histogram Equalization

Author

Kim, Hyoung-Joon, Lee, Jong-Myung, Lee, Jin-Aeon, Oh, Sang-Geun, Kim, Whoi-Yul, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Chang, Long-Wen, editor, and Lie, Wen-Nung, editor

Published
2006
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6. Color Image Enhancement Using the Laplacian Pyramid

Author

Baek, Yeul-Min, Kim, Hyoung-Joon, Lee, Jin-Aeon, Oh, Sang-Guen, Kim, Whoi-Yul, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Zhuang, Yueting, editor, Yang, Shi-Qiang, editor, Rui, Yong, editor, and He, Qinming, editor

Published
2006
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15. Mechanical reliability and bump degradation of ACF flip chip packages using BCB (Cyclotene[TM]) bumping dielectrics under temperature cycling

Author

Kwon, Woon-Seong, Kim, Hyoung-Joon, Paik, Kyung-Wook, Jang, Se-Young, and Hong, Soon-Min

Subjects
Semiconductor device, Electronics
Abstract

Interface degradation between dissimilar materials in the flip chip packages with anisotropic conductive adhesive joint is susceptible to mechanical and electrical failure upon temperature cycling. Particularly the mechanical reliability of flip chip using anisotropic conductive films (ACFs) often depends upon the interface characteristics between the bumping/passivation dielectrics and adjacent materials. This paper investigates the delamination and cracking in polymeric bumping/passivation dielectrics (Cyclotene[TM] 4024) and the damage mechanism of interconnect bump with BCB bumping dielectrics upon temperature cycling. Adhesion and fracture surface morphology after die shear testing show that the weakening and delamination of BCB passivation layer at the die corner is the main cause of the reduction of die adhesion strength after the thermal cycling. The sliding trace on fracture surface after three-point bending fracture reveals that cyclic shear displacement in a polymeric BCB layer fatigue the interface bonding or interconnect bump upon thermal cycling, leading to mechanical delamination and functional bump failure. Passivation cracks also develop around the circumference of BCB passivation over aluminum pad. A model is presented for the degradation of interconnect bump with surrounding BCB passivation. [DOI: 10.1115/1.1756143]

Published
2004

18. A new algorithm for solving ill-conditioned linear systems

Author

Kim, Hyoung Joon, Choi, Kyung, Lee, H.B., Jung, H.K., and Hahn, S.Y.

Subjects
Linear systems -- Research, Algorithms -- Research, Business, Electronics, Electronics and electrical industries
Abstract

A new algorithm is presented for solving ill-conditioned linear equations. This method is radically different from conventional methods. We improve the condition of the linear equation first and then solve the well-conditioned one. The approximate solution is modified to get the exact solution. Numerical simulations show that the proposed method is effective enough to be applied to the practical finite element problems. Mathematical soundness of the algorithm is also shown. Several implementation techniques are discussed. It can be used not only for solving ill-conditioned equations but also for inverse problems and many other areas.

Published
1996

20. Process challenges and development of eWLP

Author

Ser Choong Chong, Chee Houe Khong, Vempati Srinivasa Rao, Calvin Teo Wei Liang, Keith Lim Cheng Sing, Vincent Lee Wen Sheng, Jaesik Lee, Kim Hyoung Joon, and David Ho Soon Wee

Subjects
Stress (mechanics), Engineering drawing, Materials science, Electronic packaging, Wafer, Molding (process), Composite material, Wafer-level packaging, Finite element method, Die (integrated circuit), Highly accelerated stress test
Abstract

Embedded Wafer Level Package (eWLP) is designed and developed. The eWLP consists of one silicon die encapsulated with a mold compound and its size is 12mm × 12mm × 0.2mm. The assembly process of eWLP consists of reconfiguration of the dies on an adhesive tape, followed by molding, thinning and rerouting distribution layer (RDL) process. Finite Element Modeling (FEM) is used to understand the stress distribution in the eWLP and provide design input to the configuration of eWLP. The encapsulated eWLP passed 1000 air-to-air thermal cycles (−40 to 125°C), unbiased Highly Accelerated Stress Test (HAST) and moisture sensitivity level 3 (MSL3) test. In this paper, FEM of eWLP, selection of granular epoxy mold compound (EMC), die shift analysis, and warpage study will be discussed in detail.

Published
2010

29. The Efficacy and Safety of Carbon Dioxide Insufflation During Colonoscopy With Consecutive Esophagogastroduodenoscopy in Moderately Sedated Outpatients

Author

Seo, Eun Hee, primary, Kim, Tae Oh, additional, Park, Min Jae, additional, Kim, Hyoung Joon, additional, Shin, Bong Chul, additional, Woo, Jae Gon, additional, Heo, Nae Yun, additional, Park, Jongha, additional, Park, Seung Ha, additional, Yang, Sung Yeon, additional, and Moon, Young Soo, additional

Published
2013
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33. Process and reliability assessment of 200μm-thin embedded wafer level packages (EMWLPs)

Author

Kim, Hyoung Joon, primary, Chong, Ser Choong, additional, Ho, David Soon Wee, additional, Yong, Eric Woon Yik, additional, Khong, Chee Houe, additional, Teo, Calvin Wei Liang, additional, Fernandez, Daniel Moses, additional, Lau, Guan Kian, additional, Vasarla, Nagendra Sekhar, additional, Lee, Vincent Wen Sheng, additional, Vempati, Srinivasa Rao, additional, and Navas, Khan O K, additional

Published
2011
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44. Numerical study of preventing flow-induced die-shift in the compression molding for embedded wafer level packaging.

Author

Lin Ji, Kim, Hyoung Joon, FaXing Che, Shan Gao, and Pinjala, Damaruganath

Abstract

This paper presents a new numerical model to characterize the compression molding of wafer level packaging with epoxy polymer molding compound. With its successful application on a reconfigured carrier wafer with fully populated 3-die packages embedded, flow pattern in the wafer level compression molding is characterized for various process conditions and 2 different molding compounds. Focuses have been given on die shift induced by the impact of compression mold flow. Flow pattern and flow drag on individual die is presented. If the adhesive force is less than the maximum flow drag on the die during compression molding, die shift will take place. Results show that the peripheral dies experience highest flow drag and thus are more likely to shift outwards. Moreover, higher compression speed at low molding temperature for a low viscosity molding compound increases the risk of die shift. Key advantage of this numerical study is to give the insights into process parameters and provide initial process window to prevent die shift induced by compression flow drag. [ABSTRACT FROM PUBLISHER]

Published
2011
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45. Low cost characterization of the electrical properties of thin film and mold compound for embedded wafer level packaging (EMWLP).

Author

Lim Ying Ying, Wee, David Ho Soon, Kim Hyoung Joon, and Damaruganath, Pinjala

Abstract

In recent years, embedded wafer level package (EMWLP) technology has become a promising platform for SiP integration [1] due to its relatively low cost and good electrical performance [1–2]. As the platform is being considered for higher frequency applications (eg. 77-GHz radar), it becomes pertinent to characterize for the dielectric properties of the materials involved. Another concern is that the dielectric properties of inhomogeneous materials (eg. mold compound) may vary from batch to batch. Thus, it is desirable to have structures which are compact to enable in-situ dielectric characterization. In this work, we propose meander T-resonator structure for in-situ dielectric characterization. We also attempt to extract for the relative permittivity of the mold compound in a coplanar waveguide (CPW) configuration, based on analytical expressions. Lastly, we compare the results extracted from both the T-resonator and transmission line (TL) structure. [ABSTRACT FROM PUBLISHER]

Published
2011
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46. Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes

Author

Lee, Sang-Woo, primary, Joo, Suk-Ho, additional, Cho, Sung Lae, additional, Son, Yoon-Ho, additional, Lee, Kyu-Mann, additional, Nam, Sang-Don, additional, Park, Kun-Sang, additional, Lee, Yong-Tak, additional, Seo, Jung-Suk, additional, Kim, Young-Dae, additional, An, Hyeong-Geun, additional, Kim, Hyoung-Joon, additional, Jung, Yong-Ju, additional, Heo, Jang-Eun, additional, Lee, Moon-Sook, additional, Park, Soon-Oh, additional, Chung, U-In, additional, and Moon, Joo-Tae, additional

Published
2002
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47. Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3

Author

Lee, Moon-Sook, primary, Park, Kun-Sang, additional, Nam, Sang-Don, additional, Lee, Kyu-Mann, additional, Seo, Jung-Suk, additional, Joo, Suk-Ho, additional, Lee, Sang-Woo, additional, Lee, Yong-Tak, additional, An, Hyeong-Geun, additional, Kim, Hyoung-Joon, additional, Cho, Sung-Lae, additional, Son, Yoon-Ho, additional, Kim, Young-Dae, additional, Jung, Yong-Joo, additional, Heo, Jang-Eun, additional, Park, Soon-Oh, additional, Chung, U-In, additional, and Moon, Joo-Tae, additional

Published
2002
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