127 results on '"Kim, Soo Gil"'
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2. Improvement of MAC Accuracy using Oxygen Diffusion Barriers in Resistive Synaptic Cell Arrays
3. Multilevel operation of GdOx-based resistive switching memory device fabricated by post-deposition annealing
4. Improvement of sensing margin and reset switching fail of RRAM
5. Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling
6. First demonstration of full integration and characterization of 4F² 1S1M cells with 45 nm of pitch and 20 nm of MTJ size
7. Exploring oxygen-affinity-controlled TaN electrodes for thermally advanced TaOx bipolar resistive switching
8. Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device.
9. Resolution of the Modified Conoscopic Holography Considering Birefringence
10. Control of strain relaxation in tensile and compressive oxide thin films
11. Phase error analysis of incoherent triangular holography
12. Basic Study on Resolution of the Modified Conoscopic Holography
13. Hydration behavior of MgO single crystals and thin films
14. Angular multiplexed holographic memory system based on moving window on liquid crystal display and its crosstalk analysis
15. Removal of bias and the conjugate image in incoherent on-axis triangular holography and real-time construction of the complex hologram
16. Preparation of CuIn 1− xGa xSe 2 thin films by sputtering and selenization process
17. Hydration of r.f. magnetron sputtered MgO thin films for a protective layer in AC plasma display panel
18. Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator
19. Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability
20. Investigation of MgO and Mg1-xTixO thin Films by Electrostatic Spray Deposition Method for a Protective Layer of AC-Plasma Display Panel
21. Deposition of MgO thin films by modified electrostatic spray pyrolysis method
22. Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device
23. Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access Memory
24. Cu cone inserted CBRAM device fabrication and its improved switching reliability induced by field concentration effect
25. Breakthrough of selector technology for cross-point 25-nm ReRAM
26. Phase Error Analysis of Modified Conoscopic Holography
27. Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability
28. Resolution analysis of incoherent triangular holography
29. Low power switching of Si-doped Ta2O5 resistive random access memory for high density memory application
30. Removal of bias and conjugate image using the modified conoscopic holography
31. Improvement of characteristics of NbO2 selector and full integration of 4F2 2x-nm tech 1S1R ReRAM
32. Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell
33. Thickness-dependent electroforming behavior of ultra-thin Ta2 O5 resistance switching layer
34. Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.
35. A study on the Theoretical Resolution of Conoscopic Holography
36. Ultrathin (<10nm) Nb 2O 5/NbO 2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
37. Effect of Phase Error on the Lateral Resolution of Reconstruction Image in Incoherent Triangular Holography
38. Analysis of Effect of Phase Error Sources of Polarization Components in Incoherent Triangular Holography
39. Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
40. Ultrathin (&lt;10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
41. Enhanced Grain Boundary Mobility in Yttria‐Stabilized Cubic Zirconia under an Electric Current
42. SiO2doped Ge2Sb2Te5thin films with high thermal efficiency for applications in phase change random access memory
43. A size-dependent nanoscale metal–insulator transition in random materials
44. A Basic Study on the Filtering of Incoherent Hologram
45. The reason for the increased threshold switching voltage of SiO2 doped Ge2Sb2Te5 thin films for phase change random access memory
46. Phase Error due to Polarization Components of the Modified Triangular Interferometer
47. Analysis of Optical Transfer Function and Phase Error of the Modified Triangular Interferometer
48. Thickness-dependent electroforming behavior of ultra-thin Ta2O5 resistance switching layer.
49. Strain relaxation in buried SrRuO3 layer in (Ca1−xSrx)(Zr1−xRux)O3∕SrRuO3∕SrTiO3 system
50. A Study on the Shearographic System Using Wollaston Prism and the Polarization Elements
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