20 results on '"Kim, Geon Uk"'
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2. Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
3. 3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence
4. Pyruvate Kinase M2 Accelerates Cutaneous Wound Healing via Glycolysis and Wnt/β-Catenin Signaling
5. Analysis of Multiple Fin-type Vertical GaN Power Transistors based on Bulk GaN Substrates
6. Electrical Performance Depending on the Grain Boundary-location in the Multiple Nanosheet Tunneling Field-effect Transistor based on the Poly-Si
7. CXXC5 Mediates DHT-Induced Androgenetic Alopecia via PGD2
8. Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect
9. Pyruvate Kinase M2 Promotes Hair Regeneration by Connecting Metabolic and Wnt/β-Catenin Signaling
10. Wnt/β-catenin signaling activator restores hair regeneration suppressed by diabetes mellitus
11. Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
12. Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
13. KY19382 Accelerates Cutaneous Wound Healing via Activation of the Wnt/β-Catenin Signaling Pathway.
14. Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric
15. Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
16. Design and Analysis of DC/DC Boost Converter Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire
17. Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure
18. Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM
19. Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure
20. Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO 2 /Si 3 N 4 Dual-Layer Insulator.
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