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Probing the time evolution of the terahertz electric field within subwavelength dimensions plays a crucial role in observing the nanoscale lightwave interactions with fundamental excitations in condensed-matter systems and in artificial structures, such as metamaterials. Here, we propose a novel probing method for measuring terahertz electric potentials across nanogaps using a combination of optical and terahertz pulse excitations. To achieve this, we employ ring-shaped nanogaps that enclose a metallic island, allowing us to capture tunneling charges when subjected to terahertz electromagnetic pulse illumination. By controlling and manipulating the terahertz tunneling charges through a focused optical gate pulse, we can obtain the terahertz potential strength as a function of spatial coordinates and time delays between pulses. To accurately quantify the time evolution of terahertz electric potential across quantum barriers, we carefully calibrate the recorded nonlinear tunneling current. Its on-resonance and off-resonance behaviors are also discussed, providing valuable insights into the antenna’s characteristics and performance.

Bethe’s theory predicts that scattering by a small hole on a thin perfect electric conductor (PEC) is presented as radiation by an in-plane magnetic dipole of the incident magnetic field direction. Even in the near-infrared range where metals are no more PEC, the magnetic dipole radiation of Bethe holes has been demonstrated. However, such Bethe holes’ nature has not been addressed yet in the ultraviolet (UV) range where conductivity of metals becomes severely deteriorated. Meanwhile, UV plasmonics has been elevating its importance in spectroscopy and photochemistry, recognizing silicon (Si) as an alternative plasmonic metal featuring the interband transition in the UV range. In this work, we expanded the Bethe’s theory’s prediction to the UV range by investigating Si Bethe holes theoretically and experimentally in terms of the scattering pattern and polarization. Simulation results showed that the scattered field distribution resembles that of an in-plane magnetic dipole, and the dipole direction at oblique incidence is roughly given as the incident magnetic field direction with a deviation angle which can be predicted from the Fresnel equations. Simulation with various diameters showed that the magnetic dipole nature maintains with a diameter less than the quarter-wavelength and multipoles becomes noticeable for diameters larger than the half-wavelength. We performed scattering polarization measurement at 69-degree incidence, which confirms the theoretical analysis. The features of Si Bethe holes demonstrated here will be useful for designing UV plasmonic metasurfaces.

Cracks are formed along the photolithographically pre-determined lines with extremely high yield and repeatability, when Cu clusters are introduced between planarized Au thin films sequentially deposited on a PET substrate. These clusters act as nanometer-sized spacers preventing the formation of contiguous metallic bond between the adjacent Au layers which will render prepatterned-cracking impossible. While the effective gap width is initially zero in the optical sense from microwaves all the way to the visible, outer-bending the PET substrate allows the gap width tuning into the 100 nm range, with the stability and controllability in the ranges of 100 s and Angstrom-scale, respectively. It is anticipated that our wafer-scale prepatterned crack technology with an unprecedented mixture of macroscopic length and Angstrom-scale controllability will open-up many applications in optoelectronics, quantum photonics and photocatalysis.

Metallic nanogaps are being widely used for sensing applications, owing to their ability to confine and enhance electromagnetic field within the hot spots. Since the enhanced field does not confine itself perfectly within the gap, however, fringe fields well away from the gap are of potential use as well in real systems. Here, we extend the concept of near field absorption enhancement by quantitatively analyzing terahertz absorption behavior of water molecules outside the hot spots of sub-20 nm-wide, ∼100 μm-long nanotrenches. Contrary to point-gaps which show negligible field enhancement at distances larger than the gap width, our extended nanogap act as a line source, incorporating significant amount of absorption enhancement at much longer distances. We observe absorption enhancement factors of up to 3600 on top of a 5 nm-wide gap, and still well over 300 at 15 nm away. The finding is well supported by theoretical analyses including modal expansion calculations, Kirchhoff integral formalism and antenna theory. Our results provide means to quantitatively analyze light-matter interactions beyond the hot spot picture and enable application of nanogaps for sensitive surface analyses of various material systems.

With recent advances in nanofabrication technology, various metallic gap structures with gap widths reaching a few to sub-nanometer, and even ‘zero-nanometer’, have been realized. At such regime, metallic gaps not only exhibit strong electromagnetic field confinement and enhancement, but also incorporate various quantum phenomena in a macroscopic scale, finding applications in ultrasensitive detection using nanosystems, enhancement of light–matter interactions in low-dimensional materials, and ultralow-power manipulation of electromagnetic waves, etc. Therefore, moving beyond nanometer to ‘zero-nanometer’ can greatly diversify applications of metallic gaps and may open the field of dynamic ‘gaptronics.’ In this paper, an overview is given on wafer-scale metallic gap structures down to zero-nanometer gap width limit. Theoretical description of metallic gaps from sub-10 to zero-nanometer limit, various wafer-scale fabrication methods and their applications are presented. With such versatility and broadband applicability spanning visible to terahertz and even microwaves, the field of ‘gaptronics’ can be a central building block for photochemistry, quantum optical devices, and 5/6G communications.

Through the manipulation of metallic structures, light–matter interaction can enter into the realm of quantum mechanics. For example, intense terahertz pulses illuminating a metallic nanotip can promote terahertz field–driven electron tunneling to generate enormous electron emission currents in a subpicosecond time scale. By decreasing the dimension of the metallic structures down to the nanoscale and angstrom scale, one can obtain a strong field enhancement of the incoming terahertz field to achieve atomic field strength of the order of V/nm, driving electrons in the metal into tunneling regime by overcoming the potential barrier. Therefore, designing and optimizing the metal structure for high field enhancement are an essential step for studying the quantum phenomena with terahertz light. In this review, we present several types of metallic structures that can enhance the coupling of incoming terahertz pulses with the metals, leading to a strong modification of the potential barriers by the terahertz electric fields. Extreme nonlinear responses are expected, providing opportunities for the terahertz light for the strong light–matter interaction. Starting from a brief review about the terahertz field enhancement on the metallic structures, a few examples including metallic tips, dipole antenna, and metal nanogaps are introduced for boosting the quantum phenomena. The emerging techniques to control the electron tunneling driven by the terahertz pulse have a direct impact on the ultrafast science and on the realization of next-generation quantum devices.

Probing the time evolution of the terahertz electric field within subwavelength dimensions plays a crucial role in observing the nanoscale lightwave interactions with fundamental excitations in condensed-matter systems and in artificial structures, such as metamaterials. Here, we propose a novel probing method for measuring terahertz electric potentials across nanogaps using a combination of optical and terahertz pulse excitations. To achieve this, we employ ring-shaped nanogaps that enclose a metallic island, allowing us to capture tunneling charges when subjected to terahertz electromagnetic pulse illumination. By controlling and manipulating the terahertz tunneling charges through a focused optical gate pulse, we can obtain the terahertz potential strength as a function of spatial coordinates and time delays between pulses. To accurately quantify the time evolution of terahertz electric potential across quantum barriers, we carefully calibrate the recorded nonlinear tunneling current. Its on-resonance and off-resonance behaviors are also discussed, providing valuable insights into the antenna's characteristics and performance. [ABSTRACT FROM AUTHOR]

Bethe's theory predicts that scattering by a small hole on a thin perfect electric conductor (PEC) is presented as radiation by an in-plane magnetic dipole of the incident magnetic field direction. Even in the near-infrared range where metals are no more PEC, the magnetic dipole radiation of Bethe holes has been demonstrated. However, such Bethe holes' nature has not been addressed yet in the ultraviolet (UV) range where conductivity of metals becomes severely deteriorated. Meanwhile, UV plasmonics has been elevating its importance in spectroscopy and photochemistry, recognizing silicon (Si) as an alternative plasmonic metal featuring the interband transition in the UV range. In this work, we expanded the Bethe's theory's prediction to the UV range by investigating Si Bethe holes theoretically and experimentally in terms of the scattering pattern and polarization. Simulation results showed that the scattered field distribution resembles that of an in-plane magnetic dipole, and the dipole direction at oblique incidence is roughly given as the incident magnetic field direction with a deviation angle which can be predicted from the Fresnel equations. Simulation with various diameters showed that the magnetic dipole nature maintains with a diameter less than the quarter-wavelength and multipoles becomes noticeable for diameters larger than the half-wavelength. We performed scattering polarization measurement at 69-degree incidence, which confirms the theoretical analysis. The features of Si Bethe holes demonstrated here will be useful for designing UV plasmonic metasurfaces. [ABSTRACT FROM AUTHOR]

Understanding light interaction with metallic structures provides opportunities of manipulation of light, and is at the core of various research areas including terahertz (THz) optics from which diverse applications are now emerging. For instance, THz waves take full advantage of the interaction to have strong field enhancement that compensates their relatively low photon energy. As the THz field enhancement have boosted THz nonlinear studies and relevant applications, further understanding of light interaction with metallic structures is essential for advanced manipulation of light that will bring about subsequent development of THz optics. In this review, we discuss THz wave interaction with deep sub-wavelength nano structures. With focusing on the THz field enhancement by nano structures, we review fundamentals of giant field enhancement that emerges from non-resonant and resonant interactions of THz waves with nano structures in both sub- and super- skin-depth thicknesses. From that, we introduce surprisingly simple description of the field enhancement valid over many orders of magnitudes of conductivity of metal as well as many orders of magnitudes of the metal thickness. We also discuss THz interaction with structures in angstrom scale, by reviewing plasmonic quantum effect and electron tunneling with consequent nonlinear behaviors. Finally, as applications of THz interaction with nano structures, we introduce new types of THz molecule sensors, exhibiting ultrasensitive and highly selective functionalities.

Slot-type nanogaps have been widely utilized in transmission geometry because of their advantages of exclusive light funneling and exact quantification of near-field enhancement at the gap. For further application of the nanogaps in electromagnetic interactions with various target materials, complementary studies on both transmission and reflection properties of the nanogaps are necessary. Here, we observe an anomalous extinction of terahertz waves interacting with rectangular ring-shaped sub-30 nm wide gaps. Substrate works as an index matching layer for the nanogaps, leading to a stronger field enhancement and increased nonlinearity at the gap under substrate-side illumination. This effect is expressed in reflection as a larger dip at the resonance, caused by destructive interference of the diffracted field from the gap with the reflected beam from the metal. The resulting extinction at the resonance is larger than 60% of the incident power, even without any absorbing material in the whole nanogap structure. The extinction even decreases in the presence of an absorbing medium on top of the nanogaps, suggesting that transmission and reflection from nanogaps might not necessarily represent the absorption of the whole structure.

La0.7Sr0.3MnO3 (LSMO) has been considered as a promising material for future electronic and spintronic device application due to its unique properties such as pure spin polarization, colossal magnetoresistance, and high temperature coefficient of resistance (TCR). To apply this promising material for practical application, large epitaxial LSMO layers should be etched into micro- and nano-scale device structures. However, a comprehensive study on the etch of LSMO has not been demonstrated yet. Herein, the etch rates of LSMO are studied using inductively coupled plasma reactive ion etching (ICP-RIE) method, while controlling critical etching parameters such as ICP source power, radio frequency (rf) chuck power, etching gas ratio, and chamber pressure. We found that the etching process can be applied to nanoscale structures (down to 100 nm) without etch lag effect, exhibiting smaller etch depth in smaller features. This study will provide a good reference for the etching and the engineering of LSMO toward future electronic and spintronic devices such as highly sensitive bolometers and low-power memory devices. [ABSTRACT FROM AUTHOR]