Search

The low-dimensional ferroelectrics, ferrielectrics and antiferroelectrics are of urgent scientific interest due to their unusual polar, piezoelectric, electrocaloric and pyroelectric properties. The strain engineering and strain control of the ferroelectric properties of layered 2D Van der Waals materials, such as CuInP$_2$(S,Se)$_6$ monolayers, thin films and nanoflakes, are of fundamental interest and especially promising for their advanced applications in nanoscale nonvolatile memories, energy conversion and storage, nano-coolers and sensors. Here, we study the polar, piezoelectric, electrocaloric and pyroelectric properties of thin strained films of a ferrielectric CuInP$_2$S$_6$ covered by semiconducting electrodes and reveal an unusually strong effect of a mismatch strain on these properties. In particular, the sign of the mismatch strain and its magnitude determine the complicated behavior of piezoelectric, electrocaloric and pyroelectric responses. The strain effect on these properties is opposite, i.e., "anomalous", in comparison with many other ferroelectric films, for which the out-of-plane remanent polarization, piezoelectric, electrocaloric and pyroelectric responses increase strongly for tensile strains and decrease or vanish for compressive strains., Comment: 16 pages, 5 figures, to be presented at the VI Lithuanian-Polish Meeting on Physics of Ferroelectrics. arXiv admin note: text overlap with arXiv:2304.04097

Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. The isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices., Comment: 26 pages, 7 figures and Appendices A-C

The physical nature of the ferroelectric (FE), ferrielectric (FEI) and antiferroelectric (AFE) phases, their coexistence and spatial distributions underpin the functionality of antiferrodistortive (AFD) multiferroics in the vicinity of morphotropic phase transitions. Using Landau-Ginzburg-Devonshire (LGD) phenomenology and a semi-microscopic four sublattice model (FSM), we explore the behavior of different AFE, FEI and FE long-range orderings and their coexistence at the morphotropic phase boundaries in FE-AFE-AFD multiferroics. These theoretical predictions are compared with the experimental observations for dense Bi1-yRyFeO3 ceramics, where R is Sm or La atoms with the fraction 0 < y< 0.25, as confirmed by the X-ray diffraction (XRD) and Piezoresponse Force Microscopy (PFM). These complementary measurements were used to study the macroscopic and nanoscopic transformation of the crystal structure with the doping. The comparison of the measured and calculated AFE/FE phase fractions demonstrate that the LGD-FSM approach well describes the experimental results obtained by XRD and PFM for Bi1-yRyFeO3. Hence, this combined theoretical and experimental approach provides further insight into the origin of the morphotropic boundaries and coexisting FE and AFE states in model rare-earth doped multiferroics., Comment: 32 pages, 9 figures, 2 appendices

Single phase barium titanate-bismuth ferrite ((1-x)BaTi$_3$-(x)BiFe$_3$, BTO-BFO) solid solutions were prepared using citric acid and ethylene glycol assisted sol-gel synthesis method. Depending on the dopant content the samples are characterized by tetragonal, tetragonal-pseudocubic, pseudocubic and rhombohedral structure as confirmed by Raman spectroscopy and XRD measurements. An increase of the BFO content leads to a reduction in the cell parameters accompanied by a decrease in polar distortion of the unit cell wherein an average particle size increases from 60 up to 350 nm. Non zero piezoresponse was observed in the compounds with pseudocubic structure while no polar distortion was detected in their crystal structure using X-ray diffraction method. The origin of the observed non-negligible piezoresponse was discussed assuming a coexistence of nanoscale polar and non-polar phases attributed to the solid solutions with high BFO content. A coexistence of the nanoscale regions having polar and non-polar character is considered as a key factor to increase macroscopic piezoresponse in the related compounds due to increased mobility of the domain walls and phase boundaries.

Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work reports a novel ferroelectric rhombohedral phase of ZrO2 that can be achieved in thin films grown on (111)- Nb:SrTiO3 substrates by ion-beam sputtering. Structural and ferroelectric characterizations reveal that the (111)-oriented ZrO2 films are under epitaxial compressive strain and display a switchable ferroelectric polarization of about 20.2 {\mu}C/cm2 with a coercive field of 1.5 MV/cm. Moreover, the time dependent polarization reversal characteristics of Nb:STO/ZrO2/Au film capacitors exhibit bell-shape curves, a typical feature of ferroelectric films associated with domains reversal. The estimated activation field is comparable to the coercive field obtained from polarization-electric field hysteresis loops. Interestingly, the studied films show ferroelectric behavior per se, i.e., there is no need to apply the wake-up cycle that is essential to induce ferroelectricity in the conventional (orthorhombic) ferroelectric phase of ZrO2. Therefore, the present films have a technologically advantage over the previously studied ferroelectric ZrO2 films, and may be attractive for nanoscale ferroelectric devices., Comment: 26 pages, 9 figures

Charge carrier transport through the probe-sample junction can have substantial consequences for outcomes of electrical and electromechanical atomic-force-microscopy (AFM) measurements. For understanding physical processes under the probe, we carried out conductive-AFM (C-AFM) measurements of local current-voltage (I-V) curves as well as their derivatives on samples of a mixed ionic-electronic conductor Li1-xMn2O4 and developed an analytical framework for the data analysis. The implemented approach discriminates between contributions of a highly resistive sample surface layer and bulk with the account of ion redistribution in the field of the probe. It was found that with increasing probe voltage, the conductance mechanism in the surface layer transforms from Pool-Frenkel to space-charge-limited current. The surface layer significantly alters the ion dynamics in the sample bulk under the probe, which leads, in particular, to a decrease of the effective electromechanical AFM signal associated with the ionic motion in the sample. The framework can be applied for the analysis of mechanisms of electronic transport across the probe/sample interface as well as the role of the charge transport in the electric field distribution, mechanical, and other responses in AFM measurements of a broad spectrum of conducting materials., Comment: 31 pages main text, 35 pages Supporting Information

With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in multidimensional data sets spanning a range of experimental parameters. As an example, a common approach to study ferroelectric switching is to observe effects of applied electric field, but switching can also be enacted by pressure and is influenced by strain fields, material composition, temperature, time, etc. Moreover, the parameters are usually interdependent, so that their decoupling toward univariate measurements or analysis may not be straightforward. On the other hand, both explicit and hidden parameters provide an opportunity to gain deeper insight into the measured properties, provided there exists a well-defined path to capture and analyze such data. Here, we introduce a new, two-dimensional approach to represent hysteretic response of a material system to applied electric field. Utilizing ferroelectric polarization as a model hysteretic property, we demonstrate how explicit consideration of electromechanical response to two rather than one control voltages enables significantly more transparent and robust interpretation of observed hysteresis, such as differentiating between charge trapping and ferroelectricity. Furthermore, we demonstrate how the new data representation readily fits into a variety of machinelearning methodologies, from unsupervised classification of the origins of hysteretic response via linear clustering algorithms to neural-network-based inference of the sample temperature based on the specific morphology of hysteresis.

Electromechanical and magnetoelectric properties of Metglas/LiNbO3/Metglas trilayers have been studied in the frequency range from 20 Hz to 0.4 MHz. A trilayer of Metglas/PMN-PT/Metglas prepared in the same way was used as a reference. Though PMN-PT has much larger charge piezocoefficients than LiNbO3 (LNO), the direct magnetoelectric voltage coefficient is found to be comparable in both trilayers due to the much lower dielectric permittivity of LNO. The magnitude of the direct magnetoelectric effect in the LNO trilayers is about 0.4 V/cm*Oe in the quasistatic regime and about 90 V/cm*Oe at electromechanical resonance. Calculations show that the magnetoelectric properties can be significantly improved (up to 500 V/cm*Oe) via controlling the cut angle of LNO, choosing the appropriate thickness ratio of the ferroelectric/ferromagnetic layers, and a better bonding between Metglas and LNO. Advantages of using LiNbO3-type ferroelectrics in magnetoelectric composites are discussed., Comment: Submitted to JAP

We report the direct evidence of the possibility of charge segregation in manganites. The high contrast of electric-field-induced local charged states is observed during more than 100 hours at room temperature. These induced states display a piezoelectric response and polar properties. This effect may be an example of a new kind of polar ordering in solid state., Comment: 13 pages, 4 figures