37 results on '"Khera, Ejaz Ahmad"'
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2. A DFT Approach to Study the Vacancy Ordered lead free Double Inorganic Perovskites Na2PtX6 (X = Cl, Br) for Sustainable Technologies
3. Theoretical Engineering of Structural, Electronic, and Optical Characteristics of Double Perovskite Sr2XWO6 (X = Co, Zn) for Optical Devices
4. Screening the structural, optoelectronic and thermoelectric features of novel inverse perovskites X3MgNa (X= Cl, Br and I): A theoretical investigation
5. An ab-initio investigation of physical characteristics of GdSc1-xTMxO3(TM=Ti; x=0.25, 0.5, 0.75) for photo influenced (NIR)memory storage and allied devices
6. First principles exploration of structural stability, optoelectronic and thermoelectric properties of BaXO3 (X = Hf, Ti, V) for solar cell applications
7. Structural, dielectric and electronic properties of Ba1-xSrxZr0.3Ti0.7O3 (x = 0.0, 0.1, 0.2, 0.24, 0.27, 0.3) ceramics: Combined experimental and ab-initio study
8. Computational Prediction of Structural, Optoelectronic, Thermodynamic, and Thermoelectric Response of the Cubic Perovskite RbTmCl3 via DFT‐mBJ + SOC Studies.
9. First principles investigation of physically conductive bridge filament formation of aluminum doped perovskite materials for neuromorphic memristive applications
10. ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr1-xMxO3 (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices
11. Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices
12. Investigation of structural and electronic properties of doped ceria Ce1-xMxO2 (M=Hf,Ti,Ba,Mg,Nb,Vx=0.25%) for ReRAM applications: A first principles study
13. A DFT exploration of the optoelectronic and thermoelectric features of a novel halide double perovskite A2YAuI6 (A = Rb, Cs) for solar cell and renewable energy applications
14. Characterizing Nickel Oxide Thin Films for Smart Window Energy Conversion Applications: Combined Experimental and Theoretical Analyses
15. An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study
16. The Structural, Electronic, and Optical Characteristics of Sb2− xMxO 3 (M = Cu, Ni, Zn; x = 0.25) for Optoelectronic and Allied Applications: First‐Principles Study
17. An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices
18. Correction: An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices
19. The Structural, Electronic, and Optical Characteristics of Sb2−xMxO3 (M = Cu, Ni, Zn; x = 0.25) for Optoelectronic and Allied Applications: First‐Principles Study.
20. An insight into structural, electronic and optical characteristics of Mo1-xMxO3 (M = Zr, Y, ZrY) for the formation of conducting filaments in optoelectronic memory devices: A first principles study
21. An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs2CaSnX6 (X = Cl, Br, I) for optically influenced RRAM devices.
22. Ab-Initio Investigation of Structural, Electronic and Optical Characteristics of Novel Halide Perovskites Cspb1-Xgexbr3 (X = 0, 0.25, 0.50, 0.75, 1) for Photovoltaic Applications
23. Characterization of Nickel Oxide Thin Films for Smart Window Energy Conversion Applications:Comprehensive Experimental and Computational Study
24. Theoretical Engineering of Structural, Electronic, and Optical Characteristics of Double Perovskite Sr2XWO6 (X = Co, Zn) for Optical Devices.
25. Theoretical Investigation of CsBX3 (B = Pb, Sn; X = I, Br, Cl) Using Tran–Blaha Modified Becke–Johnson Approximation for Flexible Photoresponsive Memristors
26. Density functional theory insight into metal ions and vacancies for improved performance in storage devices
27. THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U
28. Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
29. Theoretical Investigation of CsBX3 (B = Pb, Sn; X = I, Br, Cl) Using Tran–Blaha Modified Becke–Johnson Approximation for Flexible Photoresponsive Memristors.
30. A first-principles study of Cu and Al doping in ZrO2 for RRAM device applications
31. An insight into the dopant selection for CeO2-based resistive-switching memory system: a DFT and experimental study.
32. A DFT Approach to Study the Vacancy Ordered lead free Double Inorganic Perovskites Na2PtX6 (X = Cl, Br) for Sustainable Technologies.
33. A DFT Approach to Insight on the Structural, Optoelectronic and Thermoelectric Properties of Cubic Perovskites YXO3 (X = Ga, In) for Renewable Energy Applications.
34. First-principles calculations to investigate structural, electronic, optical and thermoelectric properties of novel double perovskite Cs2CeAgX6 (X = Cl, Br) for optoelectronic and thermoelectric applications.
35. Correction: An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs 2 CaSnX 6 (X = Cl, Br, I) for optically influenced RRAM devices.
36. An ab initio investigation of the structural, mechanical, electronic, optical, and thermoelectric characteristics of novel double perovskite halides Cs 2 CaSnX 6 (X = Cl, Br, I) for optically influenced RRAM devices.
37. Improved resistive switching characteristics of a multi-stacked HfO 2 /Al 2 O 3 /HfO 2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study.
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