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In this study, we discussed the photothermal effect on a microelongated thermoelastic plate under the influence of acoustic pressure. This study is very important in many fields and has a wide application in industries. The problem is studied in the two-dimensional plane to obtain the thermoacoustic and mechanical waves behavior. Normal mode analysis is used to get the exact solution of the problem. Many comparisons between the physical quantities are made according to the different values of physical constants of many semiconductor materials. Graphical illustrations depict the numerical outcomes for the examined fields both with and without microelongation parameters.

This work explores the complex interactions of magnetic fields, photothermal effects, thermoelasticity theory, and acoustic pressure in a nonlocal semiconductor medium. These numerous physical phenomena are integrated into a complete theoretical mathematical framework used to understand the dynamic behavior of wave propagation within semiconductors. Considering the spatial distribution of carriers and their interactions, the non-local character of the semiconductor material is taken into account. The physical fields as temperature, mechanical stress, displacement, carrier density, and acoustic pressure can be analytically represented mathematically using the harmonic wave approach. Numerical simulations and theoretical discussions are performed to understand the complex interactions between these fundamental physical processes. The stability analysis of the interaction between the mechanical thermal and acoustic properties of the nonlocality medium under the impact of magnetic field by add it to the physical quantities is investigation. The theoretical results are examined and graphically shown according to the nonlocal semiconductor with magnetic field.

The Thomson influence on semiconductors can be studied by investigating the connection between the presence of thermoelectric and magnetic fields and porosity and the photothermal transport mechanism. Elastic waves, voids, magnetic fields, and thermoelectric effects in plasma are investigated. The governing equations were analyzed for a uniformly distributed and isotropic medium under two-dimensional [electronic and elastic (plasmaelastic)] deformations. The charge density is considered solely dependent on the induced electric current over time. The Laplace-Fourier transforms method in two dimensions is employed to obtain solutions for the primary variables. The recombination process results in the application of electro-mechanical loads and thermal effects on the free surface of a porous medium. The Laplace-Fourier transformations inversion operations help obtain comprehensive solutions in this study. The effects of porosity parameters and silicon (Si) on a semiconductor porous material are considered, and the resulting physical field distributions are analyzed and represented graphically.

A novel model is formulated of a microelongated semiconductor material. The material is excited in the context of photothermal transport processes. The photo-thermoelasticity theories are applied when the thermal conductivity of the microelongated semiconductor medium is changed. The novel model describes the microelongation case and the interference between the different propagation waves in the elastic medium. Thermal conductivity can be taken as a linear function of temperature during electronic and thermoelastic deformation processes. The dimensionless main fields are taken in a two-dimensional (2D) with maps converter. The harmonic wave method according to the normal mode analysis has been applied to convert the main equations to higher-order ordinary differential equations (ODE). Complete solutions are obtained by applying some conditions that are taken on the semiconductor surface. The results obtained for silicon (Si) are numerically simulated, with illustrations showing this. The comparisons are made and discussed for the main fields during the variable thermal conductivity and microelongation.

A theoretical novel model in the context of the photo-thermoelasticity theory is examined. The novel mode is studied under the impact of the external magnetic field with strong intensity. The semiconductor medium is excited by a beam of light and the governing equations are taken during a one-dimensional (1D) deformation. The main parameters (thermo-elastic, electrical conductivity and optical constants) of the medium depending on the depth of the medium which is defined as functionally graded (FG). The hyperbolic two-temperature theory is taken into account to describe the acceleration of two distinct temperature. During the excitation transport processes and magnetic field, the main parameters can be chosen as a function of the axial distance and Hall current appears, respectively. The main equations are solved analytically using the Laplace transform technique. The complete solutions have been obtained in space–time domain when the convers of Laplace transform is used numerically under some mechanical, thermal and plasma conditions. The evaluation results are compared with the corresponding computational results obtained under the impacts of some parameters.

In the present work, the semiconductor material is used to study the moisture diffusivity when a modified Moore–Gibson–Thompson (MGT) model is taken into account. The influence of moisture concentration is included in the governing equations throughout the photothermal transfer process. Based on the dissimilar relaxation durations of the coupled optoelectronic and thermoelastic waves, the MGT model is used to investigate the issue at hand. The method of the Laplace transform is used to obtain analytical solutions for the physical quantities, constitutive relationships, elastic waves, carrier density, heat equation conduction, and moisture diffusivity for the thermo-elastic medium. To extract the primary physical quantities in the space–time domain, the boundary conditions, temperature, plasma, displacement, and mechanical stress are inverted numerically using the Laplace transform. The effect of the new parameter like the reference moisture parameter with various values is discussed graphically on the primary physical quantities. The comparison between silicon and germanium is taken into account to achieve numerical computations.

A theoretical novel model of generalized photo-thermoelasticity and hyperbolic two-temperature theory is studied in this paper. The elastic medium is excited by an external magnetic field and pulsed laser based. The model is established in the context of memory-depended derivative (MDD) when the material is time-dependent. The governing equations describe the interaction processes for isotropic homogeneous hyperbolic thermoelastic medium in one-dimensional (1D) space when the non-Gaussian laser pulse model is applied with time delay. Moreover, The Laplace transforms is used to obtain analytical solutions of the main fields. As such, the medium is loaded when traction is free and shocked thermally with time-dependent. The complete solutions are obtained in Laplace time domain when the invers of Laplace transform are used numerically. Numerical results of the main quantities are discussed graphically with the effect of hyperbolic two-temperature when time-delay parameter is taken into account.

In this study, the modified Green and Lindsay model is utilized to discuss the effects of heating caused by surface absorption of laser radiation in a two-dimensional thermoelastic half-space. The temporal profile of the pulsed laser is taken as a non-Gaussian and the spatial one is a Gaussian. The medium surface is taken to be traction free. The integral transform method is utilized to obtain the general solution by applying the two transformations Hankel and Laplace, in which the inverse of Laplace is performed numerically. The Silicon material is considered as an example to verify the consistency of the obtained results of the new model.

The leading objective of this article is to investigate the analytical and numerical solutions of the Generalized Benjamin-Bona-Mahony (GBBM) equation. We also aim to compare the performance of the considered methods for solving this equation. The exact solution is obtained analytically while the numerical solutions are demonstrated using some techniques, namely, the adaptive moving mesh and uniform mesh methods. The exact solution is presented in a form of convergent power series. The finite differences are also applied to discretise the BBM equation. Under a suitable selection of parameters, some 2D and 3D surfaces for the obtained theoretical and numerical results are shown to compare the exact and numerical solutions.

A novel model in the photo-thermoelasticity theory with microstretch properties is studied. The plasma-elastic-thermal plane waves are propagated in a linear isotropic generalized photo-thermo-microstretch elastic semiconductor solid medium. The photothermal excitation occurs in the context of the microinertia of the microelement process during two-dimensional (2D) deformation. The harmonic wave techniques are used to get the solutions for the basic variables. The analytical solution of the main physical fields; carrier intensity, normal displacement components, temperature, stress load force, microstress and tangential coupled stress can be obtained. Some graphics illustrated when using the plasma, thermal and mechanical load boundary conditions are applied at the outer free surface of the elastic medium. Some semiconductor materials, as silicon (Si) and Germanium (Ge), are used to make the numerical simulation and some comparisons in different thermal memories are made. The main physical variables with new parameters are discussed theoretically and shown graphically.

The semiconductor elastic medium in the context of the photothermal theory under the influence of rotation field is studied. A novel model of the governing equations is investigated due to the refined multi-phase-lags with the thermal relaxation times of the heat equation with the hydrostatic initial stress during transport process of the photothermal phenomenon. The interaction between the multi-waves of elastic-thermal-plasma is obtained. The normal mode method in the two dimensions is applied to obtain the exact solutions of the basic physical quantities under investigation. Plasma, thermal and mechanical loads have been applied on the free surface of the semi-infinite semiconductor elastic medium to get the complete solutions of the basic physical fields. Some comparisons are shown graphically and they are discussed as a function of thermal memories with the variation of some parameters. Silicon (Si) material is used to make the numerical simulation and to display the sensitivity to the variation of the rotation parameter.

The aim of this investigation is to study a refined multi-phase-lags generalized thermoelasticity theory and coupled plasma theory for a semi-infinite semiconductor elastic medium. The model is studied in context of the Photothermal transport process for isoropic homogenous two dimension medium. The governing equations describe the interaction between elastic-plasma-thermal waves. The normal mode technique is used to get the exact solutions analytically of main physical quantities under investigation. The thermal-plasma and mechanical loads are applied at the free surface of semiconductor medium to obtain the complete solution of the temperature, displacement, stresses and carrier density distributions. Some special cases have been obtained. Results will be displayed graphically and discussed. Comparisons are made between the different theories in thermoelasticity. Keywords: Photothermal process, Multi-phase-lags theory, Semiconductor, Thermoelasticity, Normal mode

In this study, a novel model is introduced when the Hall effect associated with a strong magnetic field is taken into account when the electrons and holes interact in the processes of semiconductor material. The plasma-elastic-thermal waves are investigated in the context of diffusive processes during optical-generated transport processes. The variable of thermal conductivity is obtained during graduated temperature due to the thermal impact of fallen light. The governing equations of the novel model are investigated in a unidimensional (1D) way when the electronics and elastic deformations have occurred. The Laplace transforms are used to convert the main dimensionless physical fields according to the initial conditions into the Laplace domain. When certain thermal, mechanical, holes, and electronic conditions are used, the analytical solutions of the fundamental fields can be produced to the outer surface of the semiconductor medium. Mathematically, the Laplacian computational inversion algorithm with a numerical approximation is used to achieve the fundamental physical quantities numerically in the time domain. The influences of several parameters (thermal relaxation times, Hall impact, and thermal conductivity parameters) on thermal conditions, mechanical stress, holes charge carrier field, and carrier density are prescribed with the help of graphical diagrams that are discussed theoretically.

In this work, the thermal effect of a laser pulse is taken into account when mechanical-thermodiffusion (METD) waves are studied. The nonlocal semiconductor material is used when interference between holes and electrons occurs. The fractional technique is applied on the heat equation according to the photo-thermoelasticity theory. The governing equations describe the photo-excitation processes according to the overlapping between the thermoelasticity and photothermal theories. The thermoelastic deformation (TD) and the electronic deformation (ED) for the dimensionless fields are taken in one dimension (1D). The Laplace transforms are applied to obtain the analytical solutions when some initial and boundary conditions are applied at the nonlocal surface. The complete nondimensional solutions of the main quantities are obtained according to some numerical simulation approximate during the inversion processes of Laplace transforms and Fourier expansion. The time-fractional order, nonlocal, and thermal memories are used to compare the wave propagations of the main fields and are discussed graphically for nonlocal silicon material.

The current study focuses on one-dimensional (1D) deformation in an excited microelongated semiconductor medium impacted by optoelectronics with exponential laser-pulsed heat. Diffusion effect is considered in a photothermal problem of a semiconducting media. Microelongated optoelectronics and a broad variety of concepts have been introduced. Appropriate solutions to a set of microelongated photothermal diffusion differential equations have been found. The homogeneous (thermal and mechanical) and isotropic characteristics of the medium are thought to be in the x-direction, including coupled diffusion equations. The linear photo-thermoelasticity (PTE) theory of semiconductors is used to describe thermo-elastodiffusive waves. As a case study, the developed theoretical framework may be used to explore the microelongation-photo-thermoelastic problem in a semiconductor medium caused by the laser pulse. The analytical linear solutions for the main quantities during thermoelastic (TD) and electronic (ED) deformation are obtained using Laplace transforms for dimensionless quantities. To obtain exact expressions of the important physical variables according to certain boundary surface conditions, numerical approximations solutions of the fundamental relevant relations are performed in the Laplace inverse time domain. To describe the wave propagation of the physical fields graphically, the computational results for silicon (Si) semiconductor material are derived using several cases of thermal memory and microelongation factors.

A novel theoretical mathematical-physics model is obtained when the microstretch properties of elastic semiconductor medium are taken into account. This model is investigated in the context of photo-excitation transport processes through the thermoelasticity theory. The new model can be called Microstretch-photo-thermoelasticity (MPT) theory. The MPT model is studied under the impact of hydrostatic initial stress. The carrier’s charge field (carrier density or plasma wave) appears due to optical excitation. In this model, the interaction between thermal–mechanical-plasma waves is obtained when the medium is in a rotating case. When the medium is linear, isotropic and homogenous, the two-dimensional (2D) elastic and electronic deformations governing equations are investigated. This is done while taking into account the microinertia of the medium particles. The basic physical variables are obtained using the mathematical plane harmonic wave technique to obtain the general solutions. The complete analytical solutions are solved when conditions from mechanical-thermal and plasma type act at the free surface of the medium. The silicon (Si) and Germanium (Ge) materials are used to make the numerical simulations. The numerical results are displayed graphically and discussed.

In this paper, the two-temperature theory is used to examine a novel model that generalizes the Moore–Gibson–Thompson (MGT) effect according to two-dimensional electronic/thermoelastic deformation. The main equations for a semiconductor medium in the context of the impact of rotation are explained in terms of the impact of the initial hydrostatic stress at the free surface. The normal-mode approach is used to derive the precise formulae for the fundamental physical quantities (i.e., normal displacement, normal load stress, electronic diffusion (carrier density), dynamic and conductive temperature distribution) under the influence of the two-temperature coefficient. The comparison with the base state is performed using linear stability analysis. To make some comparisons based on the various values of thermal memories, the influence of a number of novel parameters is applied to each of our primary physical quantities, such as the rotation parameter and the initial stress. An example of the main fields’ perturbation is also obtained and graphically described.

The current work aims to investigate elasto-thermodiffusive wave propagation in a homogeneous, isotropic, and thermally conducting excited semiconductor medium. The two-temperature theory is utilized in the context of the linear photo-thermoelasticity (PTE) theory of semiconductors. Thermal and elastic memories found in the equations for heat, motion, and charge carrier field are taken into account. The governing equations are applied according to the mass-diffusion transport processes in one dimension (1D), under the influence of optoelectronics with a non-Gaussian laser pulse. Laplace transforms for dimensionless quantities are utilized to obtain the analytical linear solutions for the main quantities during thermoelastic (TD) and electronic (ED) deformation. The numerical approximations solutions of the primary relevant relations are done in the Laplace inverse time domain to observe the exact expressions of the main physical quantities according to some boundary surface conditions. The physical parameters of silicon (Si) semiconductor material are used to obtain the numerical computational results. According to the difference of the thermal memories and two-temperature parameters, the wave propagation of the physical fields is obtained graphically and the results are discussed and analyzed theoretically.

A theoretical analysis of the dynamic impacts of a novel model in the microelongated-stimulated semiconductor medium is investigated. The influence of the magnetic field of the optically excited medium is taken into consideration according to the photothermal transport processes. The governing equations were created during the electronic (ED) and thermoelastic (TED) deformation processes. Thermal conductivity of the semiconductor microelongation medium is taken as temperature dependent. The interaction of thermal, microelongate, plasma, and mechanical waves is examined. Dimensionless formulae are used to solve the main equations in two dimensions (2D) using the harmonic wave method. The physical field equations have complete solutions when some conditions are applied to the semiconductor surface. The theoretical microelongated semiconductor model employed in this experiment was confirmed by comparing it to certain earlier studies. The numerical simulation for the principal physical field distributions is graphically displayed when silicon (Si) material is employed. The topic of the discussion was the impact of several factors, such as the magnetic field, thermal memory, and microelongation, on the propagation of waves for major fields.

Investigated is a novel model in the photo-thermoelasticity theory that takes into account the impact of porosity and initial stress. A generalized photo-thermoelastic that is initially stressed and has voids is taken into consideration for the general plane strain problem. The solutions for the fundamental variables in two dimensions are obtained using the Laplace–Fourier transforms method in two dimensions (2D). Physical fields such as temperature, carrier concentration, normal displacement, and change in volume fraction field can all be solved analytically. The plasma of electrons, thermal load, and mechanical boundary conditions at the porosity medium’s free surface are used to show certain illustrations. The context of the Laplace–Fourier transformation inversion operations yields complete solutions. To complete the numerical simulation and compare several thermal memories under the influence of the porosity parameters, silicon (Si), a semiconductor porosity material, is used. The main physical variables are described and graphically displayed with the new parameters.

In this paper, a novel mathematical—physical model of the generalized elasto-thermodiffusion (hole/electron interaction) waves in semiconductor materials is studied when the hyperbolic two-temperature theory in the two-dimensional (2D) deformation is taken into account. Shear (purely transverse) waves are dissociated from the remainder of the motion and remain unaffected by external fields. The coupled system of partial differential equations of the main interacting fields has been solved. Using the Laplace transform method, the governing equations of motion and heat conduction can be formulated in 2D. The hole charge carrier, displacement, thermal, and plasma boundary conditions are applied on the interface adjacent to the vacuum to obtain the basic physical quantities in the Laplace domain. The inversion of the Laplace transform with the numerical method is applied to obtain the complete solutions in the time domain for the main physical fields under investigation. The effects of thermoelastic, the phase-lag of the temperature gradient and the phase-lag of the heat flux, the hyperbolic two-temperature parameter, and comparing between silicon and germanium materials on the displacement component, carrier density, hole charge carrier, and temperature distribution have been discussed and obtained graphically.

In this work, the effect of rotation field can be studied during the modified Green and Lindsay model (MGL). The two dimensional (2D)elastic medium is exposed to thermal influences caused by surface absorption of (pulsed) laser radiation. In this case, The non- Gaussian temporal profile is used for the impact of the pulsed laser and the spatial one is a Gaussian. The two integral transformation Hankel and Laplace method are used with some surface conditions subjected to free traction to obtain the main fields. The complete general solution of the physical quantities are obtained using the inverse of Laplace transform numerically. With neglected the carrier density, the Silicon (Si) material is used as an elastic example medium to verify from the obtained results under the impact of rotation during the new (MGL) model.

- In this manuscript, we work on the essential collocation technique via utilizing the shifted second Chebyshev polynomials type (SSCPT). The numeral technique for unraveling the nonlinear fractional Rubella ailment. The characteristic of the SSCPT is introduced. The dynamic system for this model is discussed. We proved the existence of a stable solution of the fractional model after and before control. The optimal control of this model and numerical technique for the simulation of the control problem is also discussed. The finite difference strategy has been utilized to fathom the arrangement of conditions. The numerical model is given to affirm the unwavering quality and adequacy of the suggested technique. The fad and importance of the results are clearing about the 3D plot. We are discussing free disease equilibrium, stability equilibrium point, and the existence of stable solution. It appears that the solutions acquired are novel and ability is helpful in analyzing the internal technique of other nonlinear biological models. Next applying the numerical technique, we are able to say that the outcomes we acquired are perfect, whether from an analytical or numerical point of view. Additionally, the numerical outcomes are completely consistent with the analytical outcomes. The numerical technique used in this manuscript to solve this model has not been utilized by any author before that. Also, this model with fractional derivatives defined in this way has not been studied before that. The techniques utilized are easy to effect, whether analytical or numerical and give good outcomes.

In this work, a novel model of semiconducting elastic material is studied during a process of photothermal excitation. The dual phase lag (DPL) for the heat conduction equation is introduced in the context of the variable of the thermal conductivity. The thermal conductivity can be chosen as a linear function of temperature (depend on temperature). The generalized thermoelasticy theory is investigated when an internal heat source is steady with a constant speed in the context of the gravitational field. The harmonic wave technique is used in two-dimensional deformations to obtain the considered physical fields. Some thermal loading subjected to thermal shock and other mechanical forces at the outer free surface of a semi-infinite elastic medium (semiconductor as silicon) are applied. The considered physical fields were illustrated graphically. The influences of some several variables are obtained which based on the DPL (thermal memories) model and the variable thermal conductivity. The results obtained are investigated and are depicted graphically.

The main objective of this discussion is to examine the interaction between the magnetic field and the excited semiconductor medium during the microtemperature process. The photothermal theory is used to obtain the main variables based on the generalized thermoelasticity theory of a rotator medium. The elastic-plasma-thermal transport processes in two-dimensions (2D) have been constructed. Moreover, the Fourier and Laplace integral transformations are used for the main governing equations under the influence of microtemperature vector field. The analytical solutions of the basic physical field quantities are obtained in the physical domain. The ramp type heating and some other mechanical-thermal-elastic-plasma conditions are applied on the free surface of the medium to determine the unknown parameters. To obtain the complete solutions of the main physical field quantities, the numerical inversion techniques of Fourier and Laplace transformations are used in space–time physical domain. Some comparisons are carried out for some several parameters graphically and discussed.

Constructing exact and numerical solutions of partial differential equations (PDEs) has become an active area in recent years. This work focuses on developing new exact and numerical solutions for (1+1)- dimensional Ito integro-differential equation by applying exp(-f(ζ))-expansion and finite difference methods, respectively. Trigonometric, hyperbolic and rational solutions are successfully presented. The stability and accuracy of the obtained numerical simulation are discussed. The presented graphical comparison shows that the exact and numerical solutions nearly coincide with each other. L2 error which illustrates the effectiveness of the used numerical approach is comprehensively studied. The applied methods can be effectively invoked to solve more nonlinear PDEs.

The influence of hydrostatic initial stress in the context of the time-fractional heat order equation is investigated. The strong electromagnetic field is applied at the external surface of semiconductor elastic medium during the photothermal transport process. The Thomson influence appears due to the strong magnetic field. The behavior of wave propagations of the elastic medium is obtained in context of the thermoelectricity theory with initial stress. The governing main equations are taken in two dimensions to describe the interaction between elastic-thermal-plasma and electromagnetic waves for fractional cases. The density of charge is studied as a function of time only when the electric current is induced. The separation of variables is used as a mathematical technique to obtain the exact solutions of the distributions of physical quantities under investigation. Some mechanical, thermal, plasma and magnetic conditions are applied at the free surface elastic medium. A numerical simulation is used to obtain physical quantities distributions graphically and discussed theoretically in various fractional cases.

In this paper, the elastic semiconductor medium is exposed to outer laser pulses. The laser pulses cause vibrations in the inner structure of the medium with the time fractional heat order. Under the influence of strong external magnetic field, the effect of Hall current is appeared in this case the interaction between the strong magnetic field and microstructure (microelements) of the elastic medium is studied. The microtemperature states is generated due to photo-excited electrons in context of photothermal transport process. The one-dimensional (1D) deformation is used to describe the overlapping process between elastic-magneto-plasma-thermal distribution waves in case of semiconductor elastic rod. The governing equations are solved in Laplace integral transform domain in microelements field. Some external loads are applied at the outer free surface of the medium to obtain the physical quantities under investigation. To obtain the complete solutions of the physical quantities the numerical inversion technique of Laplace transform is used. The Hall current, fractional parameters and micro-temperature effect are presented graphically and discussed theoretically under the effect of laser pulses.

The effect of rotation and hydrostatic initial stresses during electromagnetic field which is fallen on the outer surface of semiconductor medium is studied. The Thomson influence in context of photo thermal excitation process is investigated. The thermoelectricity theory is applied explain the waves behavior in the elastic semiconductor homogenous, isotropic medium. The governing equations describe the overlapping between plasma, electro-magnetic and elastic waves in two dimensional deformations when the medium is in rotation. The induced electric current is studied only when the charge density is a function of time. The normal mode analysis is a mathematical method which is used to get the physical fields distributions under investigation. The mechanical forces, electromagnetic effects thermal loads and plasma diffusion recombination process are taken at the outer free surface of the medium to obtain the complete solutions. All distributions of waves of physical quantities are represented graphically and discussed under the influence of rotation, initial stresses and Thomson parameter.

In this article, the novel mathematical model under the effect of Thomson heating of a semi-infinite semiconductor elastic medium is expressed. The thermoelasticity theory is applied in the presence of magnetic field when the medium illuminated by a laser pulse in context of photothermal excitation. The discussions are focused on studying the overlapping between plasma, thermal, electro-magnetic and elastic waves when they propagated in the medium. The two dimensional (2D) deformations is used in the governing equations when the medium is homogenous and isotropic. The charge density of induced electric current is expressed for a time functionally only. The physical fields are obtained when use the normal mode technique with some thermal, mechanical and plasma loads occur at the free surface of elastic semi-infinite semiconductor medium. The numerical calculations of physical field's distributions are discussed and shown graphically under the effect of Thomson parameter.

A novel technique is used to investigate the influence of magnetic field for a two dimensional deformations on a two temperature problem at the free surface of a semi-infinite medium. The investigation is carried out under the effects of both mechanical force and hydrostatic initial stress during a photothermal excitation theory. The equations of elastic waves, heat conduction equation, quasi-static electric field, carrier density, two temperature coefficient, ratios, and constitutive relationships for the thermo-magnetic-electric medium are obtained using the Harmonic Wave Method (HWM) technique. The effects of thermoelastic, thermoelectric and two temperature parameters of the applied force on the displacement component, force stress, carrier density and temperature distribution has been depicted graphically. Keywords: Photothermal theory, Initial stress, Magnetic field, The harmonic wave, Two temperature

In this article, the photothermal excitation and thermal conductivity of a semiconducting elastic medium due to variable temperature effect are studied. The dual-phase-lag (DPL) model and Lord-Shulman (LS) theory are used to formulate and discuss the one dimensional governing equations of the problem. The thermal ramp type and traction free at the free surface are applied, in the context of the photogenerated (plasmaelastic) processes. The complete solutions for some physical fields are obtained using the Laplace transform method. Comparisons between the results of thermal memory and variable thermal conductivity are also introduced. The effects of the medium physical fields are illustrated and discussed graphically. Keywords: Photothermal, Silicon, Thermal conductivity, Thermoelasticity, Dual-phase-lag, Lord-Shulman