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The article investigates the experience of using innovative methods of managing financial results in a joint venture and the possibility of using these methods at a Russian enterprise. The importance of managing financial results for an individual enterprise and for the country’s economy as a whole is indicated. The research includes CVP analysis of the enterprise, DuPont model, and profitability analysis of the enterprise. The authors make conclusions about the applicability of classical and innovative methods at each of the considered enterprises. Recommendations for managing financial results within the research object are proposed, their effectiveness is calculated, and the repeated CVP analysis was performed based on the expected results. It is concluded that these measures will be effective for the company in various ways. They can be implemented together or separately. However, their combined effect may differ from the sum of the effects.

The photovoltage of a metal–insulator–semiconductor structure (Pd–anodic oxide–InP) is studied in relation to the hydrogen concentration in the range 0.1–100 vol % in a nitrogen–hydrogen gas mixture. It is shown that, under simultaneous exposure of the structure to light and hydrogen, the photovoltage decay rate and the hydrogen concentration are exponentially related to each other: NH = aexp(bS). Here, NH is the hydrogen concentration (vol %) in the nitrogen–hydrogen mixture. S = dU/dt|t = 0 is the rate at which the signal U changes in the initial portion of the photovoltage decay, beginning from the instant at which the structure is brought into contact with the gas mixture. a and b are constants dependent on the thicknesses of the palladium layer and anodic oxide film on InP.

Electroluminescence of LED heterostructures with active layer made of InAsSb films grown on InAs substrates was studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission was observed with an optical cavity formed normal to the growth plane. The emission became spontaneous at higher temperatures due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron-hole pair is transferred to a hole transitioning to the spin-orbit-splitted band. The spontaneous character of emission continued up to room temperature because of the influence of other Auger processes. The results obtained suggest that InAsSb-based LED heterostructures are promising for the fabrication of vertically-emitting mid-infrared lasers.

An optical method for measuring the water and oil content using mid-IR (1.6–2.4 μm) LEDs and a wideband photodiode is suggested for the first time. This method is developed based on the absorption spectra of pure water, dewatered oil, and water—oil emulsions (cut oil) with different content of water and uses 10 types of LEDs in the spectral range 1.6–2.4 μm. It is shown that pure water heavily absorbs the LED radiation in the spectral range 1.85–2.05 μm, oil absorbs in the range 1.67–1.87 μm, and the LED radiation with a maximum at 2.20 μm is equally weakly absorbed by water and oil. An optical cell of the water-and-oil analyzer is designed on the basis of a three-element diode array with radiation maxima at 1.65 (detection of oil), 1.94 (detection of water), and 2.2 μm (reference signal) wideband photodiode covering the spectral range 1.3–2.4 μm. A calibration curve is derived that represents the dependence of the water concentration in oil on the amplitude of the reduced signal obtained by processing three signals from the LEDs. This optical method of measuring the water content in oil underlies a portable analyzer making possible online measurements directly in an oil well.

I-V characteristics, spectral photosensitivity, and the dependence of the photocurrent on bias, as well as the effect of a 1%-H2S/N2 gas mixture, were studied for an Al-p-Si-SnO2:Cu-Ag heterostructure. The charge transport for carriers in the dark and under illumination was found to obey the law J ∝ U2. Exposure to hydrogen sulfide results in a spectral shift of the photovoltage curve to shorter wavelengths. The kinetics of the decrease in photocurrent in a hydrogen sulfide medium is characterized by long relaxation times.

Electrical characteristics of Cr-n-InP and Mo-n-InP diode structures were investigated, and the charge-transport mechanism was estimated. It was established that this is either a thermionic or generation-recombination current that dominates in the Cr-n-InP structures, depending on temperature. In Mo-n-InP structures, the double injection of charge carriers dominates in the drift transport.

The mechanism of charge transport in Fe-p-InP diode structures and its dependences on illumination and magnetic field were investigated. It is shown that a double injection in a drift approximation into a high-resistivity π-layer is the main mechanism of charge transport. Phenomena of the suppression of a forward current with light (negative photoresponse) and a sharp increase in the differential resistance in a magnetic field are observed and discussed.

Electrical and photoelectric characteristics of Pd-p-InP diode structures were studied after their storage in air for many years. An increase in the Schottky barrier height by 0.2–0.3 eV and a rise in photosensitivity were revealed. The current transport mechanism is governed by a generation-recombination current and by tunneling via 0.28 and 0.40 eV levels. An assumption is made that these impurity centers lie in the surface layer of p-InP at the heterointerface with Pd.

The mechanism of charge transport in an anisotype p-Si-n+-ZnO-n-ZnO-Pd heterostructure with Schottky contact was studied. Photoelectric characteristics of this heterostructure were analyzed. The observed dependence I ∝ V3 is attributed to the double injection of charge carriers in the drift approximation. A suppression (decrease) of the forward current by irradiation with photons in the wavelength range of λ=0.7–1.2 µm was observed. This effect is accounted for by special features of the trapping of photogenerated (excess) minority charge carriers (holes) and their recombination with thermally equilibrium electrons.

Current-voltage characteristics at T=100 and 300 K, the temperature dependence of the forward current and photocurrent, the influence of a magnetic field on the photocurrent, and the influence of hydrogen on the photovoltage and dark current were investigated. It was found that the mechanism of the charge transport is controlled by double injection in the diffusion approximation at both T=100 K (I ∝ exp(qV/4kT)) and T=300 K (I ∝ Vm, m=4–5.6). Diode structures enhance the photocurrent at a reverse bias. It was found that an increase in the photocurrent in the magnetic field H (ΔIph=αexpβH) can be explained by tunneling of the photocarriers during resonance impurity scattering in terms of their exponential energy distribution.

The p-InP-n-In2O3-P2O5-Pd diode structure was fabricated using a two-stage technological procedure, which involved cold etching, polishing, and electrochemical deposition of palladium. The charge transport is investigated in the temperature range of 110–300 K, and the current-voltage characteristics are explained in terms of tunneling through a barrier, over deep trapping centers, and band-to-band tunneling. It is found that the open-circuit photovoltage increases in a water vapor atmosphere. It is demonstrated that this effect is defined by the variation of the recombination kinetics via bound states on the n-In2O3-P2O5 heteroboundary because of the absorption of H2O molecules in P2O5 oxide. The open-circuit photovoltage increases linearly with the water vapor concentration, and the relaxation of the photovoltage pulse takes ∼1–2 s. Photovoltage relaxation for the forward and reverse currents after the action of H2 is investigated. The data obtained revealed the possibility of devising a detector of threefold application, namely, for detecting near-infrared radiation, humidity, and hydrogen.

The electrical characteristics and the photovoltage on Pd-p 0-Si-p-Si diode structures with a disordered (porous) p 0 layer of Si have been measured. The current-transfer mechanism is assumed to be double injection of electrons and holes into the p 0 layer. In a hydrogen atmosphere, the photovoltage increases by a factor of 20 and the reverse current falls by a factor of 3–4. The increase of the photovoltage is associated with the growth of a Pd-p 0-Si Schottky barrier, while the decrease of the dark current is attributable to the variation in the amount of injected electrons. The relaxation of the photovoltage after turning off the H2 flow has two time intervals, with lengths of about 130 and 420 sec. It is shown that these features of the relaxation are associated with heterogeneity of the structure of the p 0 layer, which includes unanodized sections and porous sections. These regions of the structure each contain their own set of deep traps and recombination centers. This set of traps and recombination centers can vary as a result of the introduction of hydrogen which creates induced “temporary” deep levels.

We report on the observation of superlinear electroluminescence in nanoheterostructures based on GaSb with a deep narrow Al(As)Sb/InAsSb/Al(As)Sb quantum well in the active region, grown by metal organic vapor phase epitaxy. Electroluminescence spectra for different driving currents were measured at temperatures of 77 and 300 K. It is shown that such structure exhibits superlinear dependence of optical power on the drive current and its increase of 2-3 times in the current range 50-200 mA. This occurs due to impact ionization in the Al(As)Sb/InAsSb quantum well in which a large band offset at the interface ΔEC = 1.27 eV exceeds ionization threshold energy for electrons in the narrow-gap well. Theoretical calculation of the size quantization energy levels is presented, and possible cases of impact ionization, depending on the band offset ΔEC at the interface and on the quantum well width, are considered. This effect can be used to increase quantum efficiency and optical power of light emitting devices (LEDs, lasers) operating in mid-infrared spectral range, as well as for photovoltaic elements.

Electrical and photoelectric properties of Al-n-Si-SnO2:Cu-Ag heterostructures are studied. It is established that the charge transport in this structure is caused by double injection of charge carriers in the diffusion approximation. A 35% increase in the photocurrent is observed after exposing the heterostructure to a mixture of 1% of H2S with N2. The initial values of the photocurrent are recovered if the heterostructure is subsequently exposed to air. The rise and decay times of the photosignal are relatively short: 1 and 3 min, respectively.

The mechanisms of charge transfer in n+-CdS-p-InP-p+-InP heterostructures were studied in the temperature interval from 100 to 300 K. The forward current is determined either by tunneling via local centers (at low temperatures) or by recombination in the space-charge region. The reverse current is controlled by tunneling via local centers and by direct interband tunneling. Breakdown in these heterojunctions also proceeds by the tunneling mechanism.

Diode structures based on n(p)-InP with intermediate n-In2O3 and P2O5 layers were fabricated by electrochemical deposition of Pd. It is shown that when exposed to pulses of water vapor the photo-emf of the structures varies by 60–400% and in the presence of H2 it can vary by 1.5–2 orders of magnitude. These n(p)-InP-n-In2O3-P2O5-Pd structures are potential sensors for near-infrared radiation, moisture, and hydrogen.

Mechanisms are investigated for current transport in porous p-Si and Pd-p-por-Si structures in the temperature range 78–300 K. It is shown that at 78 K drift transport is decisive, with the participation of deep traps with a concentration Nt≈1.3×1013 cm−3. At higher temperatures the diffusion mechanism takes over, with I∼exp(−qV/nkT) and n=10–20. Relaxation processes for the reverse current and photocurrent (ascending branch) have a delayed character (up to t⋍100 s) and are determined by the effect of traps at a depth Et=0.80 eV. The temperature behavior of the photocurrent (without a bias) is connected with recombination at a level Er=0.12 eV, and its value essentially depends on the contribution of the basal region of the diode structure.

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs1−x−ySbxPy crystals (x=0.06, y=0.11) with n0 = 8·1015 and 3·1016 cm−3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative τR, Auger recombination τA, and recombination through centers with Ef=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with τRA = τRτA/(τR + τA), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n0≤1014 cm−3.

Current-voltage and capacitance-voltage characteristics and the transverse and longitudinal photoelectric effects are measured for n-ZnO-n-Si heterostructures obtained by deposition from organometallic compounds. Some parameters of the interface, the mechanisms for current flow, and the photoelectric characteristics of these heterostructures, which are of interest for evaluating their practical applications, are determined.

The current-voltage characteristics and photovoltage of Pd-p(n)-CdTe structures and changes in them produced by pulsed hydrogen treatment have been investigated. The current transport in Pd-n-CdTe structures [I∼exp(αV)] is found to be linked with double injection of carriers occurring as a result of their capture at trapping centers that are uniformly distributed over energy. The semiconductor regime of double injection with I∼V 2 is important for Pd-p-CdTe structures. A series of deep trapping centers, including those in the interval 0.75–0.83 eV, is responsible for the extended relaxation of the photovoltage and dark current after a hydrogen pulse (H2).

Measurements of the current-voltage characteristics, the photocurrent, and its dependence of the latter on the bias voltage (forward and reverse) and the magnetic field were used to determine the current transport mechanisms in isotypic n+-GaSb-n0-GaInAsSb-n+-GaAlAsSb heterostructures. Two mechanisms of photocurrent amplification were observed. In structures with binary injection in the diffusion approximation amplification is caused by a change in the lifetime with the level of dark carrier injection. In structures with drift transport, amplification is caused by a “transit” effect. In both cases, the trapping levels play an important role.

A longitudinal photoeffect in In0.53Ga0.47As p-n junctions was investigated: the dependence of the longitudinal photoemf Vph 1 on the coordinates of the light spot, the temperature, and the magnetic field. The dependences on the coordinates of the light spot were found to be linear; the theoretical values of Vph 1 agree with the experimental values. The temperature variation of Vph 1 in the interval 100–300 K is explained by the variation of the current-carrier mobility as a result of thermal scattering by the lattice. In a magnetic field, Vph 1 is observed to increase as a result of the photomagnetic effect.