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This paper reports the first GaN based active matrix light emitting diode (AMLED) array. The array, fabricated by CMOS compatible process and flip-chip technology, can control the LED pixel individually and exhibit excellent emission uniformity. (C) 2008 Optical Society of America

A monolithic high-resolution (individual pixel size 300 x 300 mu m(2)) active matrix (AM) programmed 8 x 8 micro-LED array was fabricated using flip-chip technology. The display was composed of an AM panel and a LED microarray. The AM panel included driving circuits composed of p-type MOS transistors for each pixel. The n-electrodes of the LED pixels in the microarray were connected together, and the p-electrodes were connected to individual outputs of the driving circuits on the AM panel. Using flip-chip technology, the LED microarray was then flipped onto the AM panel to create a microdisplay.

A monolithic high-resolution (individual pixel size 300 x 300 mu m(2)) active matrix (AM) programmed 8 x 8 micro-LED array was fabricated using flip-chip technology. The display was composed of an AM panel and a LED microarray. The AM panel included driving circuits composed of p-type MOS transistors for each pixel. The n-electrodes of the LED pixels in the microarray were connected together, and the p-electrodes were connected to individual outputs of the driving circuits on the AM panel. Using flip-chip technology, the LED microarray was then flipped onto the AM panel to create a microdisplay.