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12 results on '"Ketteniss, Nico"'

1. GaN-based heterostructure field effect transistors with ternary and quaternary InAl(Ga)N barrier layers

Author

Ketteniß, Nico and Vescan, Andrei

Subjects
Ingenieurwissenschaften, Galliumnitrid, polarization engineering, HFET, Halbleiter, wide bandgap semiconductor, Polarisationsengineering, Quaternäres System, ddc:620, HEMT, Polarisation, high electron mobility transistor, quaternary barrier layer
Abstract

The new concept of polarization engineering is introduced for GaN-based heterostructure field effect transistors (HFET), which are of great interest for high-voltage power conversion systems and for radio frequency (RF) applications. Different InAlN and quaternary nitride compositions are investigated for application as barrier layer material in HFETs. Lattice-matched InAlN/GaN HFETs with different gate length from 75 nm up to 2 µm are analyzed with respect to their DC and RF charactereistics. Polarization engineered quaternary HFETs are developed to operate in enhancement mode.

Published
2013

2. Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT

Author

Lecourt, Francois, primary, Agboton, Alain, additional, Ketteniss, Nico, additional, Behmenburg, Hannes, additional, Defrance, Nicolas, additional, Hoel, Virginie, additional, Kalisch, Holger, additional, Vescan, Andrei, additional, Heuken, Michael, additional, and De Jaeger, Jean-Claude, additional

Published
2013
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8. On the thermal oxidation of AlInN/AlN/GaN heterostructures

Author

Eickelkamp, Martin, primary, Weingarten, Martin, additional, Rahimzadeh Khoshroo, Lars, additional, Ketteniss, Nico, additional, Behmenburg, Hannes, additional, Heuken, Michael, additional, Kalisch, Holger, additional, Jansen, Rolf H., additional, and Vescan, Andrei, additional

Published
2011
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9. Study on growth and electrical performance of double‐heterostructure AlGaN/GaN/AlGaN field‐effect‐transistors

Author

Vescan, Andrei, primary, Hardtdegen, Hilde, additional, Ketteniß, Nico, additional, Eickelkamp, Martin, additional, Noculak, Achim, additional, Goliasch, Jens, additional, Ahe, Martina v. d., additional, Bay, Helge Lago, additional, Schäpers, Thomas, additional, Kalisch, Holger, additional, Grützmacher, Detlev, additional, and Jansen, Rolf H., additional

Published
2009
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11. Enhancement mode InAlGaN/GaN MISHFETs with plasma-oxidised AlOx/TiOx as gate insulator.

Author

Hahn, Herwig, Behmenburg, Hannes, Ketteniss, Nico, Heuken, Michael, Kalisch, Holger, and Vescan, Andrei

Abstract

Enhancement mode GaN-based devices can be realised i.a. by gate recessing or the utilisation of a thin barrier. Yet, as this concept bases upon an increase in barrier capacitance, the application of a gate dielectric causing a capacitance reduction remains as a critical issue. A charge-free dielectric would shift the threshold voltage to negative values, eventually forming a depletion mode device. However, with an appropriate charge-containing dielectric, the same threshold voltage as for an HFET could be maintained. Here, a metal stack consisting of Al and Ti on top of a quaternary In0.11Al0.72Ga0.17N barrier was plasma-oxidised and is shown to form insulated-gate devices with almost the same threshold voltage as their Schottky gate counterparts. The effects on the threshold voltage are discussed. It is shown that the transconductance improves by more than 80%, record drain current of 860 mA/mm is achieved and the dynamic behaviour dramatically improves. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2013
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