1. High-pressure polycrystalline thin-film synthesis and semiconducting property of platinum pernitride
- Author
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Ken Niwa, Tomoki Iizuka, Masashi Kurosawa, Yuto Nakamura, Hubert Okadome Valencia, Hideo Kishida, Osamu Nakatsuka, Takuya Sasaki, Nico Alexander Gaida, and Masashi Hasegawa
- Subjects
Physics ,QC1-999 - Abstract
A polycrystalline platinum pernitride (PtN2) thin-film was successfully synthesized via nitridation of a platinum thin-film deposited on α-Al2O3 substrate at the pressure of ∼50 GPa by using the laser-heated diamond anvil cell. The current–voltage characteristic and optical reflectance of the synthesized PtN2 thin-film were measured under ambient conditions. Combined with first-principles calculations, these experimental results have revealed that PtN2 exhibits semiconducting property with a bandgap of ∼2 eV. This high-pressure thin-film synthesis technique could also be applied for revealing the physical properties of other novel pernitrides synthesized under ultra-high pressure, which can offer new insights into the physical properties and functionality of the pernitrides and related nitrides.
- Published
- 2022
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